ZXMN10A08G

ZXMN10A08G

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• Manufacturer or author: Diodes Incorporated
• PDF pages: 7

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Document number: DS33567 Rev. 3 - 2 1 of 7 www.diodes.com January 2022 © Diodes Incorporated ZXMN10A08G 100V SOT223 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS RDS(on) ID TA = 25°C 100V 250mΩ @ VGS= 10V 2.9A 300mΩ @ VGS= 6V 2.6A Description and Applications This new generation trench MOSFET features a unique structure that combines the benefits of low on-resistance and fast switching, making it ideal for high-efficiency power management applications.  DC-DC converters  Power management functions  Disconnect switches  Motor control Features and Benefits  Low On-Resistance  Fast Switching Speed  Low Threshold  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at https://www.diodes.com/products/automotive/automotive- products/.  This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/ Mechanical Data  Package: SOT223 (Type DN)  Package Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Finish - Matte Tin Annealed over Copper Leadframe; Solderable per MIL-STD-202, Method 208  Weight: 0.112 grams (Approximate) Ordering Information (Note 4) Part Number Package Packing Qty. Carrier ZXMN10A08GTA SOT223 (Type DN) 1,000 Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen - and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/ Marking Information Equivalent Circuit D S GPin Out - Top View Top View SOT223 (Type DN) Green ZXMN10A08 = Product Type Marking Code YWW = Date Code Marking Y or Y = Last Digit of Year (ex: 2= 2022) WW or WW = Week Code (01~53) SOT223 4310 YWW ZVN ZXMN 10A08

Document number: DS33567 Rev. 3 - 2 2 of 7 www.diodes.com January 2022 © Diodes Incorporated ZXMN10A08G Maximum Ratings (@ TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (VGS=10V; TA = +25°C) (Note 6) ID 2.9 A (VGS=10V; TA = +70°C) (Note 6) 2.3 (VGS=10V; TA = +25°C) (Note 5) 2.0 Pulsed Drain Current (Note 7) IDM 11 A Continuous Source Current (Body Diode) (Note 6) IS 2.9 A Pulsed Source Current (Body Diode) (Note 7) ISM 11 A Thermal Characteristics (@ TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Power Dissipation at TA = +25°C (Note 5) Linear Derating Factor PD 2.0 W mW/°C Power Dissipation at TA = +25°C (Note 6) Linear Derating Factor PD 3.9 W mW/°C Thermal Resistance, Junction to Ambient (Note 5) RθJA 62.5 °C/W Thermal Resistance, Junction to Ambient (Note 6) RθJA 32 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@ TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS 100 - - V VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current IDSS - - 0.5 µA VDS =100V, VGS = 0V Gate-Source Leakage IGSS - - 100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) 2 - - V VDS = VGS, ID =250µA Static Drain-Source On-Resistance (Note 8) RDS(on) - - 0.25 0.30 Ω VGS = 10V, ID = 3.2A VGS = 6V, ID =2.6A Forward Transconductance (Notes 8, 10) gfs - 5 - S VDS = 15V, ID =3.2A Diode Forward Voltage (Note 8) VSD - 0.87 0.95 V TJ=25°C, IS=3.2A, VGS=0V DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Ciss - 405 - pF VDS = 50V, VGS = 0V, f = 1.0MHz Output Capacitance Coss - 28.2 - pF Reverse Transfer Capacitance Crss - 14.2 - pF Turn-On Delay Time (Note 9) tD(on) - 3.4 - ns VDD = 30V, ID = 1.2A, VGS = 10V, RG =6Ω Turn-On Rise Time (Note 9) tR - 2.2 - ns Turn-Off Delay Time (Note 9) tD(off) - 8 - ns Turn-Off Fall Time (Note 9) tF - 3.2 - ns Gate Charge (Note 9) Qg - 4.2 - nC VDS = 50V, VGS = 5V ID = 1.2A Total Gate Charge (Note 9) Qg - 7.7 - nC VDS = 50V, VGS = 10V ID = 1.2A Gate-Source Charge (Note 9) Qgs - 1.8 - nC Gate-Drain Charge (Note 9) Qgd - 2.1 - nC Reverse Recovery Time trr - 27 - ns TJ=25°C, IS=1.2A, di/dt= 100A/µs Reverse Recovery Charge Qrr - 32 - nC Notes: 5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. 6. For a device surface mounted on FR4 PCB measured at t ≦10 secs. 7. Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300µs - pulse width limited by maximum junction temperature. 8. Measured under pulsed conditions. Pulse width≦300µs. Duty cycle ≦2%. 9. Switching characteristics are independent of operating junction temperature. 10. For design aid only, not subject to production testing.

Document number: DS33567 Rev. 3 - 2 3 of 7 www.diodes.com January 2022 © Diodes Incorporated ZXMN10A08G Thermal Characteristics

Document number: DS33567 Rev. 3 - 2 4 of 7 www.diodes.com January 2022 © Diodes Incorporated ZXMN10A08G Typical Characteristics

Document number: DS33567 Rev. 3 - 2 5 of 7 www.diodes.com January 2022 © Diodes Incorporated ZXMN10A08G Typical Characteristics (continued)

Document number: DS33567 Rev. 3 - 2 6 of 7 www.diodes.com January 2022 © Diodes Incorporated ZXMN10A08G Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT223 (Type DN) A1A D b e C E L 0.25 Seating Plane Gauge Plane SOT223 (Type DN) Dim Min Max Typ A -- 1.70 -- A1 0.01 0.15 -- A2 1.50 1.68 1.60 b 0.60 0.80 0.70 b2 2.90 3.10 -- c 0.20 0.32 -- D 6.30 6.70 -- E 6.70 7.30 -- E1 3.30 3.70 -- e -- -- 2.30 e1 -- -- 4.60 L 0.85 -- -- All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT223 (Type DN) Dimensions Value (in mm) C 2.30 C1 6.40 X 1.20 X1 3.30 Y 1.60 Y1 1.60 Y2 8.00 Y X C C1 Y2

Document number: DS33567 Rev. 3 - 2 7 of 7 www.diodes.com January 2022 © Diodes Incorporated ZXMN10A08G IMPORTANT NOTICE 1. DIODES INCORPORATED A ND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON -INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes products. 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