ZXMN10A08E6 DIODES | Alldatasheet

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Technical content

Document Number DS31909 Rev. 7 - 2 1 of 8 www.diodes.com October 2009 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN10A08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS RDS(on) ID TA = 25°C 100V 0.25 Ω 1.9A Description and Applications This MOSFET utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed, this makes it ideal for high efficiency power management applications.

  • DC-DC Converters
  • Power management functions
  • Disconnect Switches
  • Motor control Features and Benefits
  • Low on-resistance
  • Fast switching speed
  • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data
  • Case: SOT23-6
  • Case Material: Molded Plastic, UL Flammability Classification Rating 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminal Connections: See Diagram
  • Terminals: Matte Tin Finish annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208
  • Weight: 0.015 grams (approximate)

Ordering Information

Product Reel size (inches) Tape width (mm) Quantity per reel ZXMN10A08E6TA 7 8 3,000 ZXMN10A08E6TC 13 8 10,000 Marking Information 10A8 = Product Type Marking Code D S G D D G D D S 10A8 SOT23-6

Document Number DS31909 Rev. 7 - 2 2 of 8 www.diodes.com October 2009 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN10A08E6 Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Drain-Source voltage VDSS 100 V Gate-Source voltage VGS ±20 V Continuous Drain current VGS = 10V (Note 2) TA = 70°C (Note 2) (Note 1) ID 1.9 1.5 1.5 A Pulsed Drain current (Note 3) IDM 8.6 A Continuous Source current (Body diode) (Note 2) IS 2.5 A Pulsed Source current (Body diode) (Note 3) ISM 8.6 A Thermal Characteristics Characteristic Symbol Value Unit Power dissipation Linear derating factor (Note 1) P D 1.1 W mW/°C 8.8 Power dissipation Linear derating factor (Note 2) 1.7 W mW/°C 13.6 Thermal Resistance, Junction to ambient (Note 1) RθJA 113 °C/W (Note 2) 73 Operating and storage temperature range TJ, TSTG -55 to 150 °C Notes: 1. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. 2. For a device surface mounted on FR4 PCB measured at t ≤ 5 sec. 3. Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse current 300μs - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph

Document Number DS31909 Rev. 7 - 2 3 of 8 www.diodes.com October 2009 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN10A08E6 Thermal Characteristics 100m 1 10 100 10m 100m VDS Drain-Source Voltage (V) Single Pulse Tamb=25°C RDS(on) Limited 100µs 1ms 10ms 100ms DC Safe Operating Area IC Drain Current (A) 0 20 40 60 80 100 120 140 160 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Derating Curve Temperature (°C) Max Power Dissipation (W) 100µ 1m 10m 100m 1 10 100 1k 100 120 Tamb=25°C Transient Thermal Impedance D=0.5 D=0.2 D=0.1 Single Pulse D=0.05 Thermal Resistance (°C/W)Pulse Width (s) 100µ 1m 10m 100m 1 10 100 1k

100 Single Pulse

Tamb=25°C Pulse Power Dissipation Pulse Width (s) Maximum Power (W)

Document Number DS31909 Rev. 7 - 2 4 of 8 www.diodes.com October 2009 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN10A08E6 Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage V(BR)DSS 100 ⎯ ⎯ V ID = 250μA, VGS = 0V Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 0.5 μA VDS = 100V, VGS = 0V Gate-Source Leakage IGSS ⎯ ⎯ ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) 2 ⎯ 4 V ID = 250μA, VDS = VGS Static Drain-Source On-Resistance (Note 4) RDS (ON) ⎯ ⎯ 0.25 0.30 Ω VGS = 10V, ID = 3.2A VGS = 6V, ID = 2.6A Forward Transconductance (Notes 4 & 6) gfs ⎯ 5.0 ⎯ S VDS = 15V, ID = 3.2A Diode Forward Voltage (Note 4) VSD ⎯ 0.87 0.95 V IS = 3.2A, VGS = 0V Reverse recovery time (Note 6) trr ⎯ 27 ⎯ ns IF = 1.2A, di/dt = 100A/μs Reverse recovery charge (Note 6) Qrr ⎯ 32 ⎯ nC DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance Ciss ⎯ 405 ⎯ pF VDS = 50V, VGS = 0V f = 1MHz Output Capacitance Coss ⎯ 28.2 ⎯ pF Reverse Transfer Capacitance Crss ⎯ 14.2 ⎯ pF Total Gate Charge Qg ⎯ 4.2 ⎯ nC VDS = 50V, VGS = 5V ID = 1.2A Total Gate Charge Qg ⎯ 7.7 ⎯ nC VDS = 50V, VGS = 10V ID = 1.2A Gate-Source Charge Qgs ⎯ 1.8 ⎯ nC Gate-Drain Charge Qgd ⎯ 2.1 ⎯ nC Turn-On Delay Time (Note 5) tD(on) ⎯ 3.4 ⎯ ns VDD = 30V, VGS = 10V ID = 1.2A, RG ≅ 6.0Ω Turn-On Rise Time (Note 5) tr ⎯ 2.2 ⎯ ns Turn-Off Delay Time (Note 5) tD(off) ⎯ 8 ⎯ ns Turn-Off Fall Time (Note 5) tf ⎯ 3.2 ⎯ ns Notes: 4. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2% 5. Switching characteristics are independent of operating junction temperatures. 6. For design aid only, not subject to production testing.

Document Number DS31909 Rev. 7 - 2 5 of 8 www.diodes.com October 2009 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN10A08E6 Typical Characteristics 0.1 1 10 0.01 0.1 0.1 1 10 0.01 0.1 345 0.1 -50 0 50 100 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.01 0.1 1 10 0.1 100 0.4 0.6 0.8 1.0 0.01 0.1 3.5V 10V Output Characteristics T = 25°C 4.5V VGS ID Drain Current (A) VDS Drain-Source Voltage (V) 10V 4.5V 3.5V Output Characteristics T = 150°C VGS ID Drain Current (A) VDS Drain-Source Voltage (V) T = -55°C Typical Transfer Characteristics VDS = 10V T = 25°C T = 150°C ID Drain Current (A) VGS Gate-Source Voltage (V) Normalised Curves v Temperature RDS(on) VGS = 10V ID = 3.2A VGS(th) VGS = VDS ID = 250uA Normalised RDS(on) and VGS(th) Tj Junction Temperature (°C) 3.5V 4V 10V 4.5V On-Resistance v Drain Current T = 25°C VGS RDS(on) Drain-Source On-Resistance (Ω) ID Drain Current (A) T = 150°C T = 25°C Source-Drain Diode Forward Voltage VSD Source-Drain Voltage (V) ISD Reverse Drain Current (A)

Document Number DS31909 Rev. 7 - 2 6 of 8 www.diodes.com October 2009 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN10A08E6 Typical Characteristics - continued 0.1 1 10 100 100 200 300 400 500 600 CRSS COSS CISS VGS = 0V f = 1MHz C Capacitance (pF) VDS - Drain - Source Voltage (V) 012345678 ID = 1.2A VDS = 50V Gate-Source Voltage v Gate ChargeCapacitance v Drain-Source Voltage Q - Charge (nC) VGS Gate-Source Voltage (V) Test Circuits Current regulator Charge Gate charge test circuit Switching time test circuit B a s i cg a t ec h a r g ew a v e f o r m Switching time waveforms D.U.T 50k12V Sameas D.U.T VGS VGS VDS VG QGS QGD QG VGS 90% 10% t(on)t(on) td(on) tr trt VDS DDV RD RG VDS ID IG d(off)

Document Number DS31909 Rev. 7 - 2 7 of 8 www.diodes.com October 2009 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN10A08E6 Package Outline Dimensions DIM Millimeters Inches Min. Max. Min. Max. A 0.90 1.45 0.35 0.057 A1 0.00 0.15 0 0.006 A2 0.90 1.30 0.035 0.051 b 0.35 0.50 0.014 0.019 C 0.09 0.20 0.0035 0.008 D 2.80 3.00 0.110 0.118 E 2.60 3.00 0.102 0.118 E1 1.50 1.75 0.059 0.069 L 0.10 0.60 0.004 0.002 e 0.95 REF 0.037 REF e1 1.90 REF 0.074 REF L 0° 10° 0° 10° Suggested Pad Layout mm inches0.65 0.026 2.2 0.087 1.06 0.042 0.95 0.037

Document Number DS31909 Rev. 7 - 2 8 of 8 www.diodes.com October 2009 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN10A08E6 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDING TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. Diodes Incorporated does not assume any liability ari sing out of the application or use of this document or an y product described herein; neither does Di odes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or us er of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. Should Customers purchase or use Diodes Inco rporated products for any unintended or una uthorized application, Customers shall i ndemnify and hold Diodes Incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical component s in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support dev ice or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporate d and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2009, Diodes Incorporated www.diodes.com