ZXMN10A08E6
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- Manufacturer or author: Diodes Incorporated
- PDF pages: 7
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Datasheet Number: DS31909 Rev. 9 – 2 1 of 7 www.diodes.com March 2015 © Diodes Incorporated ZXMN10A08E6 NEW PRODUCT 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS Max RDS(on) Max ID TA = 25C (Note 5) 100V 250mΩ @ VGS = 10V 1.9A 300mΩ @ VGS = 6V 1.68A Description and Applications This MOSFET features a unique structure, combining the benefits of low on-resistance and fast switching, making it ideal for high- efficiency, power management applications. DC - DC Converters Power Management Functions Disconnect Switches Motor Control Features and Benefits Low On-Resistance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Case: SOT26 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.015 grams (Approximate) Ordering Information (Note 4) Part Number Reel Size (inch) Tape Width (mm) Quantity Per Reel ZXMN10A08E6TA 7 8 3000 ZXMN10A08E6TC 13 8 10,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Hal ogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com. Marking Information SOT26 Date Code Key Year 2015 2016 2017 2018 2019 2020 2021 2022 2023 2024 2025 Code C D E F G H I J K L M Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Top View Pinout Top-view Device symbol SOT26 10A8 = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: C = 2015) M or M = Month (ex: 9 = September) YM 10A8
Datasheet Number: DS31909 Rev. 9 – 2 2 of 7 www.diodes.com March 2015 © Diodes Incorporated ZXMN10A08E6 NEW PRODUCT Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 100 V Gate-Source Voltage VGS 20 V Continuous Drain Current VGS = 10V Note 5) ID 1.9 A TA=+70C (Note 5) 1.5 (Note 4) 1.5 (Note 7) 3.5 Pulsed Drain Current (Note 6) IDM 8.6 A Continuous Source Current (Body Diode) (Note 5) IS 2.5 A Pulsed Source Current (Body Diode) (Note 6) ISM 8.6 A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Power Dissipation (Note 4) PD 1.1 W (Note 5) 1.7 (Note 7) 6.3 Thermal Resistance, Junction to Ambient (Note 4) RJA 114 C/W (Note 5) 73.5 Thermal Resistance, Junction to Leads (Note 7) RJL 19.7 C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 C Notes: 4. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. 5. For a device surface mounted on FR4 PCB measured at t ≤ 5 sec. 6. Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300 µs - pulse width limited by maximum junction temperature. 7. Thermal resistance from junction to solder-point (at the end of the drain lead). Thermal Characteristics 100m 1 10 100 10m 100m VDS Drain-Source Voltage (V) Single Pulse Tamb=25°C RDS(on) Limited 100µs 1ms 10ms 100ms DC Safe Operating Area IC Drain Current (A) 0 20 40 60 80 100 120 140 160 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Derating Curve Temperature (°C) Max Power Dissipation (W) 100µ 1m 10m 100m 1 10 100 1k 100 120 Tamb=25°C Transient Thermal Impedance D=0.5 D=0.2 D=0.1 Single Pulse D=0.05 Thermal Resistance (°C/W)Pulse Width (s) 100µ 1m 10m 100m 1 10 100 1k
100 Single Pulse
Tamb=25°C Pulse Power Dissipation Pulse Width (s) Maximum Power (W)
Datasheet Number: DS31909 Rev. 9 – 2 3 of 7 www.diodes.com March 2015 © Diodes Incorporated ZXMN10A08E6 NEW PRODUCT Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS 100 V ID = 250µA, VGS = 0V Zero Gate Voltage Drain Current IDSS 0.5 A VDS = 100V, VGS = 0V Gate-Source Leakage IGSS 100 nA VGS = 20V, VDS = 0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) 2.0 4.0 V ID = 250µA, VDS = VGS Static Drain-Source On-Resistance (Note 8) RDS (ON) 0.25 Ω VGS = 10V, ID = 3.2A 0.30 VGS = 6V, ID = 2.6A Forward Transconductance (Notes 8 & 10) gfs 5.0 S VDS = 15V, ID = 3.2A Diode Forward Voltage (Note 8) VSD 0.87 0.95 V IS = 3.2A, VGS = 0V Reverse Recovery Time (Note 10) trr 27 ns IS = 1.2A, di/dt = 100A/µs Reverse Recovery Charge (Note 10) Qrr 32 nC DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Ciss 405 pF VDS = 50V, VGS = 0V f = 1MHz Output Capacitance Coss 28.2 pF Reverse Transfer Capacitance Crss 14.2 pF Gate Charge (Note 9) Qg 4.2 nC VGS = 5V, VDS = 50V ID = 1.2A Total Gate Charge (Note 9) Qg 7.7 nC VGS = 10V, VDS = 50V ID = 1.2A Gate-Source Charge (Note 9) Qgs 1.8 nC Gate-Drain Charge (Note 9) Qgd 2.1 nC Turn-On Delay Time (Note 9) td(on) 3.4 ns VDD = 30V, VGS = 10V ID = 1.2A, RG 6.0Ω Turn-On Rise Time (Note 9) tr 2.2 ns Turn-Off Delay Time (Note 9) td(off) 8 ns Turn-Off Fall Time (Note 9) tf 3.2 ns Notes: 8. Measured under pulsed conditions. Width ≤300μs. Duty cycle ≤2%. 9. Switching characteristics are independent of operating junction temperature. 10. For design aid only, not subject to production testing.
Datasheet Number: DS31909 Rev. 9 – 2 4 of 7 www.diodes.com March 2015 © Diodes Incorporated ZXMN10A08E6 NEW PRODUCT Typical Characteristics 0.1 1 10 0.01 0.1 0.1 1 10 0.01 0.1 3 4 5 0.1 -50 0 50 100 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.01 0.1 1 10 0.1 100 0.4 0.6 0.8 1.0 0.01 0.1 3.5V 10V Output Characteristics T = 25°C 4.5V VGS ID Drain Current (A) VDS Drain-Source Voltage (V) 10V 4.5V 3.5V Output Characteristics T = 150°C VGS ID Drain Current (A) VDS Drain-Source Voltage (V) T = -55°C Typical Transfer Characteristics VDS = 10V T = 25°C T = 150°C ID Drain Current (A) VGS Gate-Source Voltage (V) Normalised Curves v Temperature RDS(on) VGS = 10V ID = 3.2A VGS(th) VGS = VDS ID = 250uA Normalised RDS(on) and VGS(th) Tj Junction Temperature (°C) 3.5V 4V 10V 4.5V On-Resistance v Drain Current T = 25°C VGS RDS(on) Drain-Source On-Resistance ID Drain Current (A) T = 150°C T = 25°C Source-Drain Diode Forward Voltage VSD Source-Drain Voltage (V) ISD Reverse Drain Current (A)
Datasheet Number: DS31909 Rev. 9 – 2 5 of 7 www.diodes.com March 2015 © Diodes Incorporated ZXMN10A08E6 NEW PRODUCT Typical Characteristics (continued) 0.1 1 10 100 100 200 300 400 500 600 CRSS COSS CISS VGS = 0V f = 1MHz C Capacitance (pF) VDS - Drain - Source Voltage (V) 0 1 2 3 4 5 6 7 8 ID = 1.2A VDS = 50V Gate-Source Voltage v Gate ChargeCapacitance v Drain-Source Voltage Q - Charge (nC) VGS Gate-Source Voltage (V) Test Circuits
Datasheet Number: DS31909 Rev. 9 – 2 6 of 7 www.diodes.com March 2015 © Diodes Incorporated ZXMN10A08E6 NEW PRODUCT Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. D e E1 E b A2 A1 Seating Plane L c a Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. SOT26 Dim Min Max Typ A1 0.013 0.10 0.05 A2 1.00 1.30 1.10 A3 0.70 0.80 0.75 b 0.35 0.50 0.38 c 0.10 0.20 0.15 D 2.90 3.10 3.00 e - - 0.95 e1 - - 1.90 E 2.70 3.00 2.80 E1 1.50 1.70 1.60 L 0.35 0.55 0.40 a - - 8° a1 - - 7° All Dimensions in mm Dimensions Value (in mm) C 2.40 C1 0.95 G 1.60 X 0.55 Y 0.80 Y1 3.20 Y1 G X Y C
Datasheet Number: DS31909 Rev. 9 – 2 7 of 7 www.diodes.com March 2015 © Diodes Incorporated ZXMN10A08E6 NEW PRODUCT IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LI MITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvem ents, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability a rising out of the application or use of this document or any product described herein; neither d oes Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such appli cations shall assume all risks of such use and will agree to hold Di odes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized ap plication, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product nam es and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems wi thout the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety -critical, life support devices or systems, notwithstanding any devices - or systems -related information or support that may be provided by Di odes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2015, Diodes Incorporated www.diodes.com