ZXMN10A08DN8TA VBSEMI | Alldatasheet

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S VGS IDM IAR EAR TJ, TSTG Symbol Typ Max 48 62.5 74 90 R θJL 32 40 A Repetitive avalanche energy L=0.1mH C 12.8 mJ Avalanche Current C 3 Pulsed Drain Current C Continuous Drain Current TA=25° C TA=70° C Junction and Storage Temperature Range -55 to 150 ° C Thermal Characteristics t ≤ 10s ° C/W Parameter R θJA Units Maximum Junction-to-Ambient A V V±20Gate-Source Voltage Drain-Source Voltage 100 Maximum UnitsParameter Absolute Maximum Ratings TA=25° C unless otherwise noted A ID 3.0 2.5 Power Dissipation B PD W2TA=25° C 1.3TA=70° C Maximum Junction-to-Lead Steady-State ° C/W Steady-State ° C/WMaximum Junction-to-Ambient A D PRODUCT SUMMARY VDS (V) RDS(on) ()I D (A)a Qg (Typ.) 100 0.187 at VGS = 10 V 3 7.3 nC SO-8 Top View

FEATURES

  • Halogen-free According to IEC 61249-2-21 Definition  TrenchFET ® Power MOSFET  100 % R g and UIS Tested  Compliant to RoHS D irective 2002/95/EC

APPLICATIONS

 DC/DC Conversion - Not ebook System Power N-Channel 100 V (D-S) MOSFET D ZXMN10A08DN8TA www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 A ll data sheet.com

VDS =80V, VGS =0V 1 TJ=55° C 5 IGSS 100 nA VGS(th) Gate T hreshold Voltage 1 2 3 V ID(ON) 18 A 187 TJ=125° C 193.0 gFS 15 S VSD 0.77 1 V IS 2.5 A ISM 18 A C iss 510 640 770 pF C oss 28 40 52 pF C rss 12 20 30 pF R g 0.9 1.8 2.7 Ω Q g(10V) 8 1 1 13 nC Q g(4.5V) 4 5.5 7 Q gs 4 5 6 nC Q gd 0.7 1.2 1.7 nC tD(on) 7.2 ns tr 2.2 ns tD(off) 17 ns tf 2 ns trr 14 20 26 n s Q rr 35 50 65 nCB ody Diode Reverse Recovery ChargeIF=2.5A, dI/dt=300A/µs Pulsed Body-diode CurrentC Input Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS Turn-On Rise Time Turn-Off DelayTime VGS =10V, VDS =40V, R L=8Ω , R GEN =3Ω Gate r esistance VGS =0V, VDS =0V, f =1MHz Turn-Off Fall Time Total Gate Charge VGS =10V, VDS =40V, ID =2.5A Gate So urce Charge Gate Drain Charge Total Gate Charge SWITCHING PARAMETERS m Ω IS=1A,VGS =0V VDS =5V, ID =2.5AForwar d Transconductance Diode Forward Voltage R DS(ON) Static Drain-Source On-Resistance Electrical Characteristics (TJ=25° C unless otherwise noted) STATIC PARAMETERS Parameter Conditions IDSS µA VDS =V GS ID =250µA VDS =0V, VGS = ±30V Z ero Gate Voltage Drain Current Gate-Body leakage current Maximum Body-Diode Continuous Current Body Diode Reverse Recovery Time Drain-Source Breakdown Voltage On state drain current ID =250µA, VGS =0V VGS =10V, VDS =5V VGS =10V, ID =2.5A Revers e Transfer Capacitance IF=2.5A, dI/dt=300A/µs VGS =0V, VDS =40V, f=1MHz A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150° C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150° C. Ratings are based on low frequency and duty cycles to keep initialTJ=25° C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mou nted on 1in2 FR-4 board with ZXMN10A08DN8TA www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 A ll data sheet.com

L ELECTRICAL AND THERMAL CHARACTERISTICS 0.01 0.1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) ZθθθθJA N orm alized Tra nsient Thermal Resistance Single Pulse D=T on/T TJ,PK =TA+P DM .ZθJA.RθJA Ton T PD In des cending order R θJA=90° C/ W ZXMN10A08DN8TA www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 A ll data sheet.com

A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.01 4 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 0.157 e 1.27 BSC 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0 °8 °0 °8 ° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 431 2 568 7 HE h x 45 C All Leads q 0.101 mm 0.004"LBA 1 A e D 0.25 mm (Gage Plane) SOIC (NARROW): 8-LEAD JEDEC Part N umber: MS-012 S ZXMN10A08DN8TA www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 A ll data sheet.com

RECOMMENDED MINIMUM PADS FOR SO-8 0.246 (6.248) Recommended Minimum Pads Dimensions in Inches/(mm) 0.172 (4.369) 0.152 (3.861) 0.047 (1.194) 0.028 (0.711) 0.050 (1.270) 0.022 (0.559) Return to Index ZXMN10A08DN8TA www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 A ll data sheet.com

All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. ZXMN10A08DN8TA www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 A ll data sheet.com