ZXMN10A08DN8

ZXMN10A08DN8

Document overview

• Manufacturer or author: Diodes Incorporated
• PDF pages: 6

Technical content

Document number: DS33566 Rev. 8 - 2 1 of 6 www.diodes.com May 2025 © 2025 Copyright Diodes Incorporated. All Rights Reserved. ZXMN10A08DN8 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS RDS(ON) ID 100V 0.25Ω 2.1A Description and Applications This new generation of trench MOSFETs utilizes a unique structure that combines the benefits of low on -resistance with fast switching speed. This makes them ideal for high -efficiency, low -voltage, power - management applications.

• DC-DC converters
• Power-management functions
• Disconnect switches
• Motor controls Features and Benefits
• Low On-Resistance
• Fast Switching Speed
• Low Threshold
• Low Gate Drive
• Low Profile SOIC Package
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/ Mechanical Data
• Package: SO-8
• Package Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections Indicator: See Diagram
• Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208
• Weight: 0.076 grams (Approximate) Ordering Information (Note 4) Orderable Part Number Package Reel Size (inches) Tape Width (mm) Packing Qty. Carrier ZXMN10A08DN8TA SO-8 7 12 500 units Reel ZXMN10A08DN8TC SO-8 13 12 2,500 units Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen - and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes -packaging/. Marking Information SO-8 Top View Top View Pin Configuration Equivalent Circuit ZXMN10A08 = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 25 = 2025) WW = Week (01 to 53)

Document number: DS33566 Rev. 8 - 2 2 of 6 www.diodes.com May 2025 © 2025 Copyright Diodes Incorporated. All Rights Reserved. ZXMN10A08DN8 Absolute Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 100 V Gate Source Voltage VGS ±20 V Continuous Drain Current VGS = 10V, TA = +25°C (Note 5) ID 2.1 A VGS = 10V, TA = +70°C (Note 5) 1.7 VGS = 10V, TA = +25°C (Note 6) 1.6 Pulsed Drain Current (Note 7) IDM 9 A Continuous Source Current (Body Diode) (Note 5) IS 2.6 A Pulsed Source Current (Body Diode) (Note 7) ISM 9 A Power Dissipation at TA = +25°C (Note 6) Linear Derating Factor PD 1.25 W mW/°C Power Dissipation at TA = +25°C (Note 5) Linear Derating Factor PD 1.8 14.5 W mW/°C Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Thermal Resistance Parameter Symbol Value Unit Junction to Ambient (Note 6) RθJA 100 °C/W Junction to Ambient (Note 5) RθJA 69 °C/W Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Parameter Symbol Min Typ Max Unit Test Condition STATIC Drain-Source Breakdown Voltage BVDSS 100 — — V ID = 250µA, VGS = 0V Zero Gate Voltage Drain Current IDSS — — 0.5 µA VDS = 100V, VGS = 0V Gate-Body Leakage IGSS — — 100 nA VGS = ±20V, VDS = 0V Gate-Source Threshold Voltage VGS(th) 2.0 — — V ID = 250µA, VDS = VGS Static Drain-Source On-State Resistance (Note 8) RDS(on) — 0.25 0.30 Ω VGS = 10V, ID = 3.2A VGS = 6V, ID = 2.6A Forward Transconductance (Notes 8 & 9) gfs — 5.0 — S VDS = 15V, ID = 3.2A DYNAMIC (Note 9) Input Capacitance Ciss — 405 — pF VDS = 50V, VGS = 0V f = 1MHz Output Capacitance Coss — 28.2 — pF Reverse Transfer Capacitance Crss — 14.2 — pF SWITCHING (Notes 9 & 10) Turn-On Delay Time td(on) — 3.4 — ns VDD = 30V, ID = 1.2A RG  6.0Ω, VGS = 10V Rise Time tr — 2.2 — ns Turn-Off Delay Time td(off) — 8 — ns Fall Time tf — 3.2 — ns Gate Charge Qg — 4.2 — nC VDS = 50V, VGS = 5V ID = 1.2A Total Gate Charge Qg — 7.7 — nC VDS = 50V, VGS = 10V ID = 1.2A Gate-Source Charge Qgs — 1.8 — nC Gate-Drain Charge Qgd — 2.1 — nC SOURCE-DRAIN DIODE Diode Forward Voltage (Note 8) VSD — 0.87 0.95 V TJ = +25°C, IS = 3.2A VGS = 0V Reverse-Recovery Time (Note 9) trr — 27 — ns TJ = +25°C, IF = 1.2A di/dt = 100A/µs Reverse-Recovery Charge (Note 9) Qrr — 32 — nC Notes: 5. For a device surface-mounted on FR4 PCB measured at t ≤ 5 secs. 6. For a device surface-mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions . 7. Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300µs – pulse width limited by maximum junction temperature. 8. Measured under pulsed conditions. Width = 300μs. Duty cycle ≤ 2%. 9. For design aid only, not subject to production testing. 10. Switching characteristics are independent of operating junction temperature.

Document number: DS33566 Rev. 8 - 2 5 of 6 www.diodes.com May 2025 © 2025 Copyright Diodes Incorporated. All Rights Reserved. ZXMN10A08DN8 Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SO-8 SO-8 Dim Min Max Typ A 1.40 1.50 1.45 A1 0.10 0.20 0.15 b 0.30 0.50 0.40 c 0.15 0.25 0.20 D 4.85 4.95 4.90 E 5.90 6.10 6.00 E1 3.80 3.90 3.85 E0 3.85 3.95 3.90 e -- -- 1.27 h -- -- 0.35 L 0.62 0.82 0.72 Q 0.60 0.70 0.65 All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SO-8 Dimensions Value (in mm) C 1.27 X 0.802 X1 4.612 Y 1.505 Y1 6.50 b e E A 9° (All sides) 4°± 3° c Q h 45° R 0.1 D L Seating Plane Gauge Plane C X Y

Document number: DS33566 Rev. 8 - 2 6 of 6 www.diodes.com May 2025 © 2025 Copyright Diodes Incorporated. All Rights Reserved. ZXMN10A08DN8 IMPORTANT NOTICE 1. DIODES INCORPORATED (Diodes) AND ITS SUBSIDIARIES MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON -INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes ’ products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes’ products. Diodes’ products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of Diodes ’ products for their intended applications, (c) ensuring their applications, which incorporate Diodes ’ products, comply the applicable legal and regulatory requirements as well as safety and functional - safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality co ntrol techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their applications. 3. Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes from time to time. Any customer or user of this document or products described herein will assume all risks and liabilities associated with such use, and will hold Diodes and all companies whose products are represented herein or on Diodes’ websites, harmless against all damages and liabilities. 4. Products described herein may be covered by one or more United States, international or foreign patents and pending patent applications. Product names and markings noted herein may also be covered by one or more United States, international or foreign t rademarks and trademark applications. Diodes does not convey any license under any of its intellectual property rights or the rights of any third parties (including third parties whose products and services may be described in this document or on Diodes’ website) under this document. 5. Diodes’ products are provided subject to Diodes’ Standard Terms and Conditions of Sale (https://www.diodes.com/about/company/terms-and-conditions/terms-and-conditions-of-sales/) or other applicable terms. This document does not alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. 6. Diodes’ products and technology may not be used for or incorporated into any products or systems whose manufacture, use or sale is prohibited under any applicable laws and regulations. Should customers or users use Diodes ’ products in contravention of any applicable laws or regulations, or for any unintended or unauthorized application, customers and users will (a) be solely responsible for any da mages, losses or penalties arising in connection therewith or as a result ther eof, and (b) indemnify and hold Diodes and its representatives and agents harmless against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with the applicable laws and regulations, as well as any unintended or unauthorized application. 7. While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may c ontain technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this do cument is error-free and Diodes is under no obligation to update or otherwise correct this information. Notwithstanding the foregoing, Diodes reserves the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes. 8. Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion her eof) is prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising from any such unauthorized use. 9. This Notice may be periodically updated with the most recent version available at https://www.diodes.com/about/company/terms-and- conditions/important-notice The Diodes logo is a registered trademark of Diodes Incorporated in the United States and other countries. All other trademarks are the property of their respective owners. © 2025 Diodes Incorporated. All Rights Reserved. www.diodes.com