ZXMN10A07Z

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  • Manufacturer or author: Diodes Incorporated
  • PDF pages: 7

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Document number DS33565 Rev. 7- 2 1 of 7 www.diodes.com June 2012 © Diodes Incorporated ADVANCE INFORMATION A Product Line of Diodes Incorporated ZXMN10A07Z 100V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT89 PACKAGE Product Summary V(BR)DSS R DS(on) Max ID max TA = 25°C (Note 6) 100V 700mΩ @ VGS = 10V 1.4A 900mΩ @ VGS = 6V 1.2A Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

  • DC-DC Converters
  • Power Management functions
  • Motor control
  • Disconnect switches Features and Benefits
  • Low On-Resistance
  • Low Threshold
  • Fast Switching Speed
  • Low Gate Drive
  • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data
  • Case: SOT89
  • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminals: Matte Tin Finish
  • Weight: 0.052 grams (approximate) Ordering Information (Note 4) Product Marking Reel size (inches) Tape width (mm) Quantity per reel ZXMN10A07ZTA 7N10 7 12 1,000 Notes: 1. No purposely added lead. Fully EU Directiv e 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen and Antimony free,"Green" and Lead-Free. 3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com Marking Information Top View SOT89 Device symbol Top View Pin-Out 7N10 = Product type Marking Code D S G 7N10

Document number DS33565 Rev. 7- 2 2 of 7 www.diodes.com June 2012 © Diodes Incorporated ADVANCE INFORMATION A Product Line of Diodes Incorporated ZXMN10A07Z Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Drain-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current Steady State @ VGS = 10V; TA = 25°C (Note 6) @ VGS = 10V; TA = 70°C (Note 6) @ VGS = 10V; TA = 25°C (Note 5) ID 1.4 1.1 1.0 A Pulsed Drain Current (Note 7) IDM 4.2 A Continuous Source Current (Body Diode) (Note 6) IS 2.1 A Pulsed Source Current (Body Diode) (Note 7) ISM 4.2 A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Power Dissipation (Note 5) Linear Derating Factor PD 1.5 W mW/°C Power Dissipation (Note 6) Linear Derating Factor PD 2.6 W mW/°C Thermal Resistance, Junction to Ambient (Note 5) RθJA 83.3 °C/W Thermal Resistance, Junction to Ambient (Note 6) RθJA 47.4 °C/W Thermal Resistance, Junction to Leads (Note 8) RθJL 6.36 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. 6. For a device surface mounted on FR4 PCB measured at t ≤ 10 sec. 7. Repetitive rating - 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300μs – pulse width limited by maximum junction temperature. 8. Thermal resistance from junction to solder-point (at the end of the drain lead). Thermal Characteristics 11 0 1 00 10m 100m Single Pulse Tamb=25°C RDS(on) Limited 100µs 1ms 10ms 100ms DC Safe Operating Area ID Drain Current (A) VDS Drain-Source Voltage (V) 0 2 04 06 08 0 1 0 0 1 2 0 1 4 0 1 6 0 0.00 0.25 0.50 0.75 1.00 1.25 1.50 Derating Curve Temperature (°C) Max Power Dissipation (W) 100µ 1m 10m 100m 1 10 100 1k Tamb=25°C Transient Thermal Impedance D=0.5 D=0.2 D=0.1 Single Pulse D=0.05 Thermal Resistance (°C/W) Pulse Width (s) 100µ 1m 10m 100m 1 10 100 1k 100 Single Pulse Tamb=25°C Pulse Power Dissipation Pulse Width (s) Maximum Power (W)

Document number DS33565 Rev. 7- 2 3 of 7 www.diodes.com June 2012 © Diodes Incorporated ADVANCE INFORMATION A Product Line of Diodes Incorporated ZXMN10A07Z Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS 100 - - V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current TJ = 25°C IDSS - - 1.0 μA VDS = 100V, VGS = 0V Gate-Source Leakage IGSS - - 100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) 2 - 4 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance (Note 9) RDS (ON) - - 700 mΩ VGS = 10V, ID = 1.5A - 900 VGS = 6V, ID = 1A Forward Transconductance (Note 9 & 11) gFS - 1.6 - S VDS = 15V, ID = 1A Diodes Forward Voltage (Note 9) VSD - 0.85 0.95 V TJ = 25°C, IS = 1.5A, VGS = 0V DYNAMIC CHARACTERISTICS Input Capacitance (Note 10 & 11) Ciss - 138 - pF VDS = 50V, VGS = 0V, f = 1.0MHz Output Capacitance (Note 10 & 11) Coss - 12 - pF Reverse Transfer Capacitance (Note 10 & 11) Crss - 6 - pF Gate Resistance (Note 10 & 11) Rg 1.8 - 2.6 Ω f = 1MHz, VGS = 0V, VDS = 0V Total Gate Charge (Note 10 & 11) Qg - 2.9 - nC VGS = 10V, VDS = 50V, ID = 1A Gate-Source Charge (Note 10 & 11) Qgs - 0.7 - nC Gate-Drain Charge (Note 10 & 11) Qgd - 1 - nC Reverse Recovery Time (Note 11) trr 27 ns TJ = 25°C, IF = 1A, di/dt = 100A/μs Reverse Recovery Charge (Note 11) Qrr 12 nC Turn-On Delay Time (Note 10 & 11) tD(on) - 1.8 - ns VGS = 10V, VDD = 50V, RG = 6Ω , ID = 1A Turn-On Rise Time (Note 10 & 11) tr - 1.5 - ns Turn-Off Delay Time (Note 10 & 11) tD(off) - 4.1 - ns Turn-Off Fall Time (Note 10 & 11) tf - 2.1 - ns Notes: 9. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤2%. 10. Switching characteristics are independent of operating junction temperature. 11. For design aid only, not subject to production testing.

Document number DS33565 Rev. 7- 2 4 of 7 www.diodes.com June 2012 © Diodes Incorporated ADVANCE INFORMATION A Product Line of Diodes Incorporated ZXMN10A07Z Typical Characteristics 0.1 1 10 0.01 0.1 0.1 1 10 0.01 0.1 3456 0.01 0.1 -50 0 50 100 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.01 0.1 1 0.1 7V10V Output Characteristics T = 25° C 4.5V VGS ID Drain Current (A) VDS Drain-Source Voltage (V) 10V 7V 4.5V 3.5V Output Characteristics T = 150° C VGS ID Drain Current (A) VDS Drain-Source Voltage (V) Typical Transfer Characteristics VDS = 10V T = 25° C T = 150° C ID Drain Current (A) VGS Gate-Source Voltage (V) Normalised Curves v Temperature RDS(on) VGS = 10V ID = 1.5A VGS(th) VGS = VDS ID = 250uA Normalised R DS(on) and VGS(th) Tj Junction Temperature (° C) 10V 5V4.5V On-Resistance v Drain Current T = 25° C VGS RDS(on) Drain-Source On-Resistance (Ω) ID Drain Current (A) T = 150° C T = 25° C Source-Drain Diode Forward Voltage VSD Source-Drain Voltage (V) ISD Reverse Drain Current (A)

Document number DS33565 Rev. 7- 2 5 of 7 www.diodes.com June 2012 © Diodes Incorporated ADVANCE INFORMATION A Product Line of Diodes Incorporated ZXMN10A07Z Typical Characteristics - Continued Test Circuits

Document number DS33565 Rev. 7- 2 6 of 7 www.diodes.com June 2012 © Diodes Incorporated ADVANCE INFORMATION A Product Line of Diodes Incorporated ZXMN10A07Z Package Outline Dimensions Suggested Pad Layout SOT89 Dim Min Max A 1.40 1.60 B 0.44 0.62 B1 0.35 0.54 C 0.35 0.44 D 4.40 4.60 D1 1.62 1.83 E 2.29 2.60 e 1.50 Typ H 3.94 4.25 H1 2.63 2.93 L 0.89 1.20 All Dimensions in mm Dimensions Value (in mm) X 0.900 X1 1.733 X2 0.416 Y 1.300 Y1 4.600 Y2 1.475 Y3 0.950 Y4 1.125 C 1.500 E H B1 B e C L A D 8° (4X) H R0.200 Y2Y C X (3x) Y3 Y4 X2 (2x)

Document number DS33565 Rev. 7- 2 7 of 7 www.diodes.com June 2012 © Diodes Incorporated ADVANCE INFORMATION A Product Line of Diodes Incorporated ZXMN10A07Z IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or an y product described herein; neither does Di odes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or us er of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. Should Customers purchase or use Diodes Inco rporated products for any unintended or una uthorized application, Customers shall i ndemnify and hold Diodes Incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical component s in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support dev ice or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporate d and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2012, Diodes Incorporated www.diodes.com