ZXMN10A07F

Document overview

  • Manufacturer or author: Diodes Incorporated
  • PDF pages: 7

Technical content

Features

  • Low On-Resistance
  • Low Threshold
  • Fast Switching Speed
  • Low Gate Drive
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data
  • Case: SOT23
  • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminals: Matte Tin Finish
  • Weight: 0.008 grams (approximate) Ordering Information (Note 4) Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel ZXMN10A07FTA 7N1 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directiv e 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen and Antimony free,"Green" and Lead-Free. 3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com Marking Information Top View SOT23 Device Symbol Top View Pin-Out D S G D S G 7N1 = Product Type Marking Code

Document number: DS33564 Rev. 6 - 2 2 of 7 www.diodes.com August 2012 © Diodes Incorporated ZXMN10A07F A Product Line of Diodes Incorporated Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current Steady State @ VGS = 10V; TA = +25°C (Note 6) @ VGS = 10V; TA = +70°C (Note 6) @ VGS = 10V; TA = +100°C (Note 6) @ VGS = 10V; TA = +25°C (Note 5) ID 0.8 0.6 0.5 0.7 A Pulsed Drain Current (Note 7) IDM 3.5 A Continuous Source Current (Body Diode) (Note 6) IS 0.5 A Pulsed Source Current (Body Diode) (Note 7) ISM 3.5 A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Power Dissipation (Note 5) PD 625 mW Power Dissipation (Note 6) PD 806 mW Thermal Resistance, Junction to Ambient (Note 5) RθJA 200 °C/W Thermal Resistance, Junction to Ambient (Note 6) RθJA 155 °C/W Thermal Resistance, Junction to Leads (Note 8) RθJL 194 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. 6. For a device surface mounted on FR4 PCB measured at t ≤ 10 sec. 7. Repetitive rating - 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300μs – pulse width limited by maximum junction temperature. 8. Thermal resistance from junction to solder-point (at the end of the drain lead). Thermal Characteristics 11 0 1 00 10m 100m Single Pulse Tamb=25°C RDS(on) Limited 100µs 1ms 10ms 100ms DC Safe Operating Area ID Drain Current (A) VDS Drain-Source Voltage (V) 0 20 40 60 80 100 120 140 160 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Derating Curve Temperature (°C) Max Power Dissipation (W) 100µ 1m 10m 100m 1 10 100 1k 100 150

200 Tamb=25°C

Transient Thermal Impedance D=0.5 D=0.2 D=0.1 Single Pulse D=0.05 Thermal Resistance (°C/W) Pulse Width (s) 100µ 1m 10m 100m 1 10 100 1k Single Pulse Tamb=25°C Pulse Power Dissipation Pulse Width (s) Maximum Power (W)

Document number: DS33564 Rev. 6 - 2 3 of 7 www.diodes.com August 2012 © Diodes Incorporated ZXMN10A07F A Product Line of Diodes Incorporated Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS 100 — — V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current TJ = +25°C IDSS — — 1.0 µA VDS = 100V, VGS = 0V Gate-Source Leakage IGSS — — 100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) 2 — 4 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance (Note 9) RDS (ON) — 540 700 mΩ VGS = 10V, ID = 1.5A 700 900 VGS = 6V, ID = 1A Forward Transconductance (Notes 9 & 11) gfs — 1.6 — S VDS = 15V, ID = 1A Diodes Forward Voltage (Note 9) VSD — 0.85 0.95 V TJ = +25°C, IS = 1.5A, VGS = 0V DYNAMIC CHARACTERISTICS Input Capacitance (Notes 10 & 11) Ciss — 138 280 pF VDS = 50V, VGS = 0V, f = 1.0MHz Output Capacitance (Notes 10 & 11) Coss — 12 25 Reverse Transfer Capacitance (Notes 10 & 11) Crss — 6 12 Gate Resistance (Notes 10 & 11) Rg — 2 4 Ω f = 1MHz, VGS = 0V, VDS = 0V Total Gate Charge (Notes 10 & 11) Qg — 2.9 6 nC VGS = 10V, VDS = 50V, ID = 1A Gate-Source Charge (Notes 10 & 11) Qgs — 0.7 1.5 Gate-Drain Charge (Notes 10 & 11) Qgd — 1 2 Reverse Recovery Time (Note 11) trr — 27 60 ns TJ = +25°C, IF = 1.8A, di/dt = 100A/µs Reverse Recovery Charge (Note 11) Qrr — 12 — nC Turn-On Delay Time (Notes 10 & 11) tD(on) — 1.8 — ns VGS = 10V, VDD = 50V, RG = 6Ω , ID = 1A Turn-On Rise Time (Notes 10 & 11) tr — 1.5 — Turn-Off Delay Time (Notes 10 & 11) tD(off) — 4.1 — Turn-Off Fall Time (Notes 10 & 11) tf — 2.1 — Notes: 9. Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤ 2%. 10. Switching characteristics are independent of operating junction temperature. 11. For design aid only, not subject to production testing.

Document number: DS33564 Rev. 6 - 2 4 of 7 www.diodes.com August 2012 © Diodes Incorporated ZXMN10A07F A Product Line of Diodes Incorporated Typical Characteristics 0.1 1 10 0.01 0.1 0.1 1 10 0.01 0.1 3456 0.01 0.1 -50 0 50 100 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.01 0.1 1 0.1 7V10V Output Characteristics T = 25° C 4.5V VGS ID Drain Current (A) VDS Drain-Source Voltage (V) 10V 7V 4.5V 3.5V Output Characteristics T = 150° C VGS ID Drain Current (A) VDS Drain-Source Voltage (V) Typical Transfer Characteristics VDS = 10V T = 25° C T = 150° C ID Drain Current (A) VGS Gate-Source Voltage (V) Normalised Curves v Temperature RDS(on) VGS = 10V ID = 1.5A VGS(th) VGS = VDS ID = 250uA Normalised R DS(on) and VGS(th) Tj Junction Temperature (° C) 10V 5V4.5V On-Resistance v Drain Current T = 25° C VGS RDS(on) Drain-Source On-Resistance (Ω) ID Drain Current (A) T = 150° C T = 25° C Source-Drain Diode Forward Voltage VSD Source-Drain Voltage (V) ISD Reverse Drain Current (A)

Document number: DS33564 Rev. 6 - 2 5 of 7 www.diodes.com August 2012 © Diodes Incorporated ZXMN10A07F A Product Line of Diodes Incorporated Typical Characteristics (cont.) 11 0 1 00 100 120 140 160 180 200 CRSS COSS CISS VGS = 0V f = 1MHz C Capacitance (pF) VDS - Drain - Source Voltage (V) ID = 1.0A VDS = 50V Gate-Source Voltage v Gate ChargeCapacitance v Drain-Source Voltage Q - Charge (nC) VGS Gate-Source Voltage (V) Test Circuits

Document number: DS33564 Rev. 6 - 2 6 of 7 www.diodes.com August 2012 © Diodes Incorporated ZXMN10A07F A Product Line of Diodes Incorporated Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 - - 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 α 0° 8° - All Dimensions in mm Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 A M J L D F B C H K G X E Y CZ

Document number: DS33564 Rev. 6 - 2 7 of 7 www.diodes.com August 2012 © Diodes Incorporated ZXMN10A07F A Product Line of Diodes Incorporated IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or an y product described herein; neither does Di odes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or us er of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated a nd all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. Should Customers purchase or use Diodes Inco rporated products for any unintended or una uthorized application, Customers shall i ndemnify and hold Diodes Incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical component s in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporate d and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2012, Diodes Incorporated www.diodes.com