ZXMHC10A07T8

Document overview

  • Manufacturer or author: Diodes Incorporated
  • PDF pages: 10

Technical content

Features

 2 x N + 2 x P Channels in a SOIC Package  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data  Case: SM-8 (8 LEAD SOT223)  Case Material: Molded Plastic, "Green" Molding Compound; UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminal Connections Indicator: See Diagram  Terminals: Finish  Matte Tin Annealed over Copper Leadframe; Solderable per MIL-STD-202, Method 208  Weight: 0.117 grams (Approximate) Ordering Information (Note 4) Part Number Reel Size Tape Width Quantity per Reel ZXMHC10A07T8TA 7’’ 12mm 1,000 units Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Hal ogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. Marking Information Green Top View Internal Schematic Top View Pin Configuration SM-8 YWW ZXMHC 10A07 ZXMHC10A07 = Product Type Marking Code YWW = Date Code Marking Y or Y = Last Digit of Year (ex: 5= 2015) WW or WW = Week Code (01~53) SM-8 D3 D4 S1S4 D1 D2G1 S2 S3 PIN1

Document number: DS33510 Rev. 4 - 2 2 of 10 www.diodes.com March 2015 © Diodes Incorporated ZXMHC10A07T8 NEW PRODUCT ADVANCE INFORMATION Maximum Ratings (@TA = +25° C, unless otherwise specified.) Characteristic Symbol N-channel P-channel Units Drain-Source Voltage VDSS 100 -100 V Gate-Source Voltage VGSS ±20 ±20 V Continuous Drain Current, VGS = 10V (Note 8) Steady State TA = +25° C (Note 6) TA = +70° C (Note 6) TA = +25° C (Note 5) ID 1.1 0.9 1.0 -0.9 -0.8 -0.8 A Maximum Body Diode Forward Current (Note 6) IS 2.3 -2.2 A Pulsed Drain Current (Note 7) IDM 5.2 -4.5 A Pulsed Source Current (Note 7) ISM 5.2 -4.5 A Thermal Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Units Total Power Dissipation (Note 8) Linear Derating Factor TA = +25° C (Note 5) PD 1.3 10.4 W mW/° C Total Power Dissipation (Note 8) Linear Derating Factor TA = +25° C (Note 6) PD 1.3 W mW/° C Thermal Resistance, Junction to Ambient (Note 8) Steady State (Note 5) RθJA 94.5 ° C/W Steady State (Note 6) 73.3 ° C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 5. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions, with the heat sink split into two equal areas one for each drain connection. 6. For a device surface mounted on FR4 PCB measu red at t 10 seconds. 7. Repetitive rating 50mm x 50mm x 1.6mm FR4 PCB, D = 0.02, pulse width 300μs - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. 8. For device with one active die.

Document number: DS33510 Rev. 4 - 2 3 of 10 www.diodes.com March 2015 © Diodes Incorporated ZXMHC10A07T8 NEW PRODUCT ADVANCE INFORMATION Electrical Characteristics N-CHANNEL (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 10) Drain-Source Breakdown Voltage BVDSS 100 — — V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current IDSS — — 1.0 μA VDS = 100V, VGS = 0V Gate-Source Leakage IGSS — — 100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 10) Gate Threshold Voltage VGS(TH) 2.0 — 4.0 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance (Note 9) RDS(ON) — — 0.7 Ω VGS = 10V, ID = 1.5A Forward Transfer Admittance (Notes 9 & 11) gfs — 1.6 — S VDS = 15V, ID = 1.0A Diode Forward Voltage (Note 9) VSD — — 0.95 V VGS = 0V, IS = 1.5A DYNAMIC CHARACTERISTICS (Note 11) Input Capacitance Ciss — 138 — pF VDS = 60V, VGS = 0V, f = 1MHz Output Capacitance Coss — 12 — Reverse Transfer Capacitance Crss — 6 — Total Gate Charge Qg — 2.9 — nC VDS = 50V, ID = 1.0A, VGS = 10V Gate-Source Charge Qgs — 0.7 — Gate-Drain Charge Qgd — 1.0 — Turn-On Delay Time tD(ON) — 1.8 — ns VDD = 50V, VGS = 10V, ID = 1.0A, RG = 6.0Ω Turn-On Rise Time tR — 1.5 — Turn-Off Delay Time tD(OFF) — 4.1 — Turn-Off Fall Time tF — 2.1 — Reverse Recovery Time tRR — 27 — ns IS = 1.8A, di/dt = 100A/μs Reverse Recovery Charge Qrr — 12 — nC Electrical Characteristics P-CHANNEL (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 10) Drain-Source Breakdown Voltage BVDSS -100 — — V VGS = 0V, ID = -250μA Zero Gate Voltage Drain Current IDSS — — -1.0 μA VDS = -100V, VGS = 0V Gate-Source Leakage IGSS — — 100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 10) Gate Threshold Voltage VGS(TH) -2.0 — -4.0 V VDS = VGS, ID = -250μA Static Drain-Source On-Resistance (Note 9) RDS(ON) — — 1.0 Ω VGS = -10V, ID = -0.6A Forward Transfer Admittance (Notes 9 & 11) gfs — 1.2 — S VDS = -15V, ID = -0.6A Diode Forward Voltage (Note 9) VSD — -0.85 -0.95 V VGS = 0V, IS = -0.75A DYNAMIC CHARACTERISTICS (Note 11) Input Capacitance Ciss — 141 — pF VDS = -50V, VGS = 0V, f = 1MHz Output Capacitance Coss — 13.1 — pF Reverse Transfer Capacitance Crss — 10.8 — pF Gate Charge (VGS = -5.0V) Qg — 1.6 — nC VDS = -50V, ID = -0.6A Total Gate Charge (VGS = -10V) Qg — 3.5 — nC Gate-Source Charge Qgs — 0.6 — nC Gate-Drain Charge Qgd — 1.6 — nC Turn-On Delay Time tD(ON) — 1.6 — ns VDD = -50V, VGS = -10V, RG = 6.0Ω, ID = -1.0A Turn-On Rise Time tR — 2.1 — ns Turn-Off Delay Time tD(OFF) — 5.9 — ns Turn-Off Fall Time tF — 3.3 — ns Reverse Recovery Time tRR — 29 — ns IS = -0.9A, di/dt = 100A/μs Reverse Recovery Charge Qrr — 31 — nC Notes: 9. Measured under pulsed conditions. Width≤300μs. Duty cycle ≤ 2%. 10. Short duration pulse test used to minimize self-heating effect. 11. Guaranteed by design. Not subject to product testing .

Document number: DS33510 Rev. 4 - 2 4 of 10 www.diodes.com March 2015 © Diodes Incorporated ZXMHC10A07T8 NEW PRODUCT ADVANCE INFORMATION Typical Characteristics

Document number: DS33510 Rev. 4 - 2 5 of 10 www.diodes.com March 2015 © Diodes Incorporated ZXMHC10A07T8 NEW PRODUCT ADVANCE INFORMATION Typical Characteristics (N-Channel)

Document number: DS33510 Rev. 4 - 2 6 of 10 www.diodes.com March 2015 © Diodes Incorporated ZXMHC10A07T8 NEW PRODUCT ADVANCE INFORMATION Typical Characteristics (N-Channel) (Cont.)

Document number: DS33510 Rev. 4 - 2 7 of 10 www.diodes.com March 2015 © Diodes Incorporated ZXMHC10A07T8 NEW PRODUCT ADVANCE INFORMATION Typical Characteristics (P-Channel)

Document number: DS33510 Rev. 4 - 2 8 of 10 www.diodes.com March 2015 © Diodes Incorporated ZXMHC10A07T8 NEW PRODUCT ADVANCE INFORMATION Typical Characteristics (P-Channel) (Cont.)

Document number: DS33510 Rev. 4 - 2 9 of 10 www.diodes.com March 2015 © Diodes Incorporated ZXMHC10A07T8 NEW PRODUCT ADVANCE INFORMATION Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. SM-8 Dim Min Max Typ A -- 1.70 1.60 A1 0.02 0.10 0.04 b 0.70 0.90 0.80 c 0.24 0.32 0.28 D 6.30 6.70 6.60 e 1.53 REF e1 4.59 REF E 6.70 7.30 7.00 E1 3.30 3.70 3.50 L 0.75 1.00 0.90 Ø -- -- 45° Ø1 -- 15° -- Ø2 -- -- 10° All Dimensions in mm Dimensions Value (in mm) C 1.52 C1 4.60 X 0.95 Y 2.80 Y1 6.80 b D E1E A e L cø1 ø Seating Plane X C Y

Document number: DS33510 Rev. 4 - 2 10 of 10 www.diodes.com March 2015 © Diodes Incorporated ZXMHC10A07T8 NEW PRODUCT ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other c hanges without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license unde r its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diod es Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product nam es and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety -critical, life support devices or systems, notwithstanding any devices - or systems -related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2015, Diodes Incorporated www.diodes.com