ZXMHC10A07N8
Document overview
- Manufacturer or author: Diodes Incorporated
- PDF pages: 11
Technical content
Features
- 2 x N + 2 x P channels in a SOIC package
Applications
- DC Motor control
- DC-AC Inverters
Ordering information
(inches) Tape width (mm) Quantity per reel ZXMHC10A07N8TC 13 12 2,500 Device marking ZXMHC 10A07 P1S/P2S N1S/N2S P1G P2G N2G N1G P1D/N1D P2D/N2D
Issue 1.0 - March 2009 2 © Diodes Incorporated www.diodes.com Absolute maximum ratings Parameter Symbol N- channel channel Unit Drain-Source voltage VDSS 100 -100 V Gate-Source voltage VGS ±20 ±20 V Continuous Drain current @ VGS= 10V; TA=25°C (b) @ VGS= 10V; TA=70°C (b) @ VGS= 10V; TA=25°C (a) @ VGS= 10V; TL=25°C (f) ID 1.00 0.80 0.80 0.81 -0.85 -0.68 -0.68 -0.69 A Pulsed Drain current @ VGS= 10V; TA=25°C (c) IDM 4.30 -3.64 A Continuous Source current (Body diode) at TA =25°C (b) IS 0.70 -0.60 A Pulsed Source current (Body diode) at TA =25°C (c) ISM 4.30 -3.64 A Power dissipation at TA =25°C (a) Linear derating factor PD 0.87 6.94 W mW/°C Power dissipation at TA =25°C (b) Linear derating factor PD 1.36 10.9 W mW/°C Power dissipation at TL =25°C (f) Linear derating factor PD 0.90 7.19 W mW/°C Operating and storage temperature range Tj, Tstg -55 to 150 °C Thermal resistance Parameter Symbol Value Unit Junction to ambient (a) RθJA 144 °C/W Junction to ambient (b) RθJA 92 °C/W Junction to ambient (d) RθJA 106 °C/W Junction to ambient (e) RθJA 254 °C/W Junction to lead (f) RθJL 139 °C/W NOTES: (a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions with the heat-sink split into two equal areas (one for each drain connection); the device is measured when operating in a steady-state condition with one active die. (b) Same as note (a), except the device is measured at t ≤ 10 sec. (c) Same as note (a), except the device is pulsed with D= 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature. (d) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions with the heat-sink split into two equal areas (one for each drain connection); the device is measured when operating in a steady-state condition with one active die. (e) For a device surface mounted on minimum copper 1.6mm FR4 PCB, in still air conditions; the device is measured when operating in a steady-state condition with one active die. (f) Thermal resistance from junction to so lder-point (at the end of the drain lead); the device is operating in a steady-state condition with one active die.
Issue 1.0 - March 2009 3 © Diodes Incorporated www.diodes.com Thermal characteristics 1 10 100 10m 100m 0 25 50 75 100 125 150 0.0 0.5 1.0 100µ 1m 10m 100m 1 10 100 1k 100 120 140 100µ 1m 10m 100m 1 10 100 1k 100 11 0 1 00 10m 100m Note (a) 100us 100ms RDS(ON) Limited 1ms N-channel Safe Operating Area Single Pulse, Tamb=25°C DC 10ms ID Drain Current (A) VDS Drain-Source Voltage (V) Any one active die Derating Curve Max Power Dissipation (W) Temperature (°C) One Active Die 25 x 25mm 1oz D=0.2 D=0.5 D=0.1 Transient Thermal Impedance Single Pulse D=0.05 Thermal Resistance (°C/W) Pulse Width (s) One Active Die Single Pulse Tamb=25°C Pulse Power Dissipation Maximum Power (W) Pulse Width (s) Note (a) Single Pulse, Tamb=25°C DC 100us 1ms 10ms 100ms RDS(ON) Limited P-channel Safe Operating Area -VDS Drain-Source Voltage (V) -ID Drain Current (A)
Issue 1.0 - March 2009 4 © Diodes Incorporated www.diodes.com N-channel electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symbol Min. Typ. Max. Unit Conditions Static Drain-Source breakdown voltage V(BR)DSS 100 V ID = 250μA, VGS= 0V Zero Gate voltage Drain current IDSS 0.5 µA VDS= 100V, VGS= 0V Gate-Body leakage IGSS ±100 nA VGS= ±20V, VDS= 0V Gate-Source threshold voltage VGS(th) 2.0 4.0 V ID= 250μA, VDS= VGS Static Drain-Source on-state resistance (a) RDS(on) 0.7 0.9 Ω VGS= 10V, ID= 1.5A VGS= 6.0V, ID= 1.0A Forward Transconductance (a) (c) gfs 1.6 S VDS= 15V, ID= 1.0A Dynamic Capacitance (c) Input capacitance Ciss 138 pF VDS= 60V, VGS= 0V f= 1MHz Output capacitance Coss 12 pF Reverse transfer capacitance Crss 6 pF Switching (b) (c) Turn-on-delay time td(on) 1.8 ns VDD= 50V, VGS= 10V ID= 1.0A RG ≅ 6.0Ω, Rise time tr 1.5 ns Turn-off delay time td(off) 4.1 ns Fall time tf 2.1 ns Gate charge (c) Total Gate charge Qg 2.9 nC VDS=50V, VGS= 10V ID= 1.0A Gate-Source charge Qgs 0.7 nC Gate-Drain charge Qgd 1.0 nC Source–Drain diode Diode forward voltage (a) VSD 0.95 V IS= 1.5A, VGS= 0V Reverse recovery time (c) trr 27 ns IS= 1.8A, di/dt= 100A/μs Reverse recovery charge(c) Qrr 12 nC NOTES: (a) Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%. (b) Switching characteristics are independent of operating junction temperature. (c) For design aid only, not subject to production testing
Issue 1.0 - March 2009 5 © Diodes Incorporated www.diodes.com N-channel typical characteristics 0.1 1 10 0.01 0.1 0.1 1 10 0.01 0.1 3456 0.01 0.1 -50 0 50 100 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.01 0.1 1 0.1 7V10V Output Characteristics T = 25°C 4.5V VGS ID Drain Current (A) VDS Drain-Source Voltage (V) 10V 7V 4.5V 3.5V Output Characteristics T = 150° C VGS ID Drain Current (A) VDS Drain-Source Voltage (V) Typical Transfer Characteristics VDS = 10V T = 25° C T = 150° C ID Drain Current (A) VGS Gate-Source Voltage (V) Normalised Curves v Temperature RDS(on) VGS = 10V ID = 1.5A VGS(th) VGS = VDS ID = 250uA Normalised R DS(on) and VGS(th) Tj Junction Temperature (° C) 10V 5V4.5V On-Resistance v Drain Current T = 25° C VGS RDS(on) Drain-Source On-Resistance (Ω) ID Drain Current (A) T = 150° C T = 25°C Source-Drain Diode Forward Voltage VSD Source-Drain Voltage (V) ISD Reverse Drain Current (A)
Issue 1.0 - March 2009 6 © Diodes Incorporated www.diodes.com N-channel typical characteristics –continued Test circuits Current regulator Charge Gate charge test circuit Switching time test circuit Basic gate charge waveform Switching time waveforms D.U.T 50k12V Same as D.U.T VGS VGS VDS VG QGS QGD QG VGS 90% 10% t(on)t(on) td(on) tr trtd(off) VDS DDV RD RG VDS ID IG 1 10 100 100 120 140 160 180 200 CRSS COSS CISS VGS = 0V f = 1MHz C Capacitance (pF) VDS - Drain - Source Voltage (V) ID = 1.0A VDS = 50V Gate-Source Voltage v Gate ChargeCapacitance v Drain-Source Voltage Q - Charge (nC) VGS Gate-Source Voltage (V)
Issue 1.0 - March 2009 7 © Diodes Incorporated www.diodes.com P-channel electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symbol Min. Typ. Max. Unit Conditions Static Drain-Source breakdown voltage V(BR)DSS -100 V ID = -250μA, VGS= 0V Zero Gate voltage Drain current IDSS -0.5 µA VDS= -100V, VGS= 0V Gate-Body leakage IGSS ±100 nA VGS= ±20V, VDS= 0V Gate-Source threshold voltage VGS(th) -2.0 -4.0 V ID= -250μA, VDS= VGS Static Drain-Source on-state resistance (a) RDS(on) 1.0 1.45 Ω VGS= -10V, ID= -0.6A VGS= -6.0V, ID= -0.5A Forward Transconductance (a) (c) gfs 1.2 S VDS= -15V, ID= -0.6A Dynamic Capacitance (c) Input capacitance Ciss 141 pF VDS= -50V, VGS= 0V f= 1MHz Output capacitance Coss 13.1 pF Reverse transfer capacitance Crss 10.8 pF Switching (b) (c) Turn-on-delay time td(on) 1.6 ns VDD= -50V, VGS= -10V ID= -1.0A RG ≅ 6.0Ω Rise time tr 2.1 ns Turn-off delay time td(off) 5.9 ns Fall time tf 3.3 ns Gate charge (c) Total Gate charge Qg 3.5 nC VDS= -50V, VGS= -10V ID= -0.6A Gate-Source charge Qgs 0.6 nC Gate-Drain charge Qgd 1.6 nC Source–Drain diode Diode forward voltage (a) VSD -0.85 -0.95 V IS= -0.7A, VGS= 0V Reverse recovery time (c) trr 29 ns IS= -0.9A, di/dt= 100A/μs Reverse recovery charge(c) Qrr 31 nC NOTES: (a) Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%. (b) Switching characteristics are independent of operating junction temperature. (c) For design aid only, not subject to production testing
Issue 1.0 - March 2009 8 © Diodes Incorporated www.diodes.com P-channel typical characteristics 0.1 1 10 1E-3 0.01 0.1 0.1 1 10 1E-3 0.01 0.1 345 0.01 0.1 -50 0 50 100 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 0.01 0.1 1 10 100 0.01 0.1 10V 4.5V -VGS 3.5V Output Characteristics T = 25°C -VGS -ID Drain Current (A) -VDS Drain-Source Voltage (V) 4.5V 7V10V 3.5V Output Characteristics T = 150°C -ID Drain Current (A) -VDS Drain-Source Voltage (V) Typical Transfer Characteristics -VDS = 10V T = 25°C T = 150°C -ID Drain Current (A) -VGS Gate-Source Voltage (V) Normalised Curves v Temperature RDS(on) VGS = -10V ID = - 0.6A VGS(th) VGS = VDS ID = -250uA Normalised RDS(on) and VGS(th) Tj Junction Temperature (°C) 4.5V 10V 3.5V On-Resistance v Drain Current T = 25°C-VGS RDS(on) Drain-Source On-Resistance (Ω) -ID Drain Current (A) T = 150°C T = 25°C Source-Drain Diode Forward Voltage -VSD Source-Drain Voltage (V) -ISD Reverse Drain Current (A)
Issue 1.0 - March 2009 9 © Diodes Incorporated www.diodes.com P-channel typical characteristics –continued 0.1 1 10 100 100 150 200 CRSS COSS CISS VGS = 0V f = 1MHz C Capacitance (pF) -VDS - Drain - Source Voltage (V) 01234 ID = -0.6A VDS = -50V Gate-Source Voltage v Gate ChargeCapacitance v Drain-Source Voltage Q - Charge (nC) -VGS Gate-Source Voltage (V) Test circuits Current regulator Charge Gate charge test circuit Switching time test circuit Basic gate charge waveform Switching time waveforms D.U.T 50k 0.2/H9262F 12V Same as D.U.T VGS VGS VDS VG QGS QGD QG VGS 90% 10% t(on) t(on) td(on) tr tr td(off) VDS VDD RD RG Pulse width /H11021 1/H9262S Duty factor 0.1% VDS ID IG
Issue 1.0 - March 2009 10 © Diodes Incorporated www.diodes.com Packaging details - SO8 DIM Inches Millimeters DIM Inches Millimeters H 0.228 0.244 5.80 6.20 θ 0° 8° 0° 8° Note: Controlling dimensions are in inches. Approximate dimensions are provided in millimeters
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