ZXMC6A09DN8 DIODES | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 10

Technical content

N-Channel V(BR)DSS = 60V; RDS(ON) = 0.045 ;I D= 5.1A P-Channel V(BR)DSS = -60V; RDS(ON) = 0.055 ;I D= -4.8A

DESCRIPTION

This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.

FEATURES

  • Low on-resistance
  • Fast switching speed
  • Low threshold
  • Low gate drive
  • Low profile SOIC package

APPLICATIONS

  • Motor drive
  • LCD backlighting DEVICE MARKING ZXMC 6A09 ZXMC6A09DN8 ISSUE 4 - MAY 2005 COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET DEVICE REEL TAPE WIDTH QUANTITY PER REEL ZXMC6A09DN8TA 7 ’‘ 12mm 500 units ZXMC6A09DN8TC 13’‘ 12mm 2500 units

ORDERING INFORMATION

Q2 = P-CHANNELQ1 = N-CHANNEL SO8 Top view PINOUT

PARAMETER SYMBOL V ALUE UNIT Junction to Ambient (a)(d) RθJA 100 °C/W Junction to Ambient (b)(e) RθJA 69 °C/W Junction to Ambient (b)(d) RθJA 58 °C/W THERMAL RESISTANCE Notes: (a) For a dual device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper in still air conditions. (b) For a dual device surface mounted on FR4 PCB measured at t /H1134910 sec. (c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02, pulse width=300µs - pulse width limited by maximum junction temperature. (d) For a dual device with one active die. (e) For a device with two active die running at equal power. PARAMETER SYMBOL N-Channe l P-Channel UNIT Drain-Source Voltage VDSS 60 -60 V Gate-Source Voltage VGS /H1100620/H1100620 V Continuous Drain Current@V GS=10V; T A=25/H11034C (b)(d) @VGS=10V; T A=25/H11034C (b)(d) @VGS=10V; T A=25/H11034C (a)(d) ID 5.1 4.1 3.9 -4.8 -3.8 -3.7 A A Pulsed Drain Current (c) IDM 25 -23 A Continuous Source Current (Body Diode) (b) IS 3.5 -3.3 A Pulsed Source Current (Body Diode) (c) ISM 25.4 -23.8 A Power Dissipation at T A=25°C (a)(d) Linear Derating Factor PD 1.25 W mW/°C Power Dissipation at T A=25°C (a)(e) Linear Derating Factor PD 1.8 W mW/°C Power Dissipation at T A=25°C (b)(d) Linear Derating Factor PD 2.1 W mW/°C Operating and Storage Temperature Range T j:Tstg -55 to +150 °C ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS STATIC Drain-Source Breakdown Voltage V (BR)DSS 60 V ID=250µ A, V GS=0V Zero Gate Voltage Drain Current I DSS 1.0 /H9262AV DS=60V, V GS=0V Gate-Body Leakage I GSS 100 nA V GS=/H1100620V, V DS=0V Gate-Source Threshold Voltage V GS(th) 1.0 V I D=250/H9262A, V DS=V GS Static Drain-Source On-State Resistance (1) RDS(on) 0.045 0.070 /H9024 /H9024 VGS=10V, I D=8.2A VGS=4.5V, I D=7.4A Forward Transconductance (1)(3) gfs 15 S V DS=15V,I D=8.2A DYNAMIC (3) Input Capacitance Ciss 1407 pF VDS=40V, V GS=0V, f=1MHzOutput Capacitance Coss 121 pF Reverse Transfer Capacitance Crss 59 pF SWITCHING (2) (3) Turn-On Delay Time td(on) 4.9 ns VDD =30V, I D=1.0A RG 6.0Ω ,V GS=10V Rise Time t r 3.3 ns Turn-Off Delay Time td(off) 28.5 ns Fall Time tf 11.0 ns Gate Charge Qg 12.4 nC V DS=15V,V GS=5V, ID=3.5A Total Gate Charge Qg 24.2 nC VDS=15V,V GS=10V, ID=3.5AGate-Source Charge Qgs 5.2 nC Gate-Drain Charge Qgd 3.5 nC SOURCE-DRAIN DIODE Diode Forward Voltage (1) VSD 0.85 0.95 V T J=25°C, I S=6.6A, VGS=0V Reverse Recovery Time (3) trr 26.3 ns T J=25°C, I F=3.5A, di/dt= 100A//H9262s Reverse Recovery Charge (3) Qrr 26.6 nC N-CHANNEL ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) NOTES (1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing.

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS STATIC Drain-Source Breakdown Voltage V (BR)DSS -60 V ID=-250µ A, V GS=0V Zero Gate Voltage Drain Current I DSS -1.0 /H9262AV DS=-60V, V GS=0V Gate-Body Leakage I GSS 100 nA V GS=/H1100620V, V DS=0V Gate-Source Threshold Voltage V GS(th) -1.0 V I D=-250/H9262A, V DS=V GS Static Drain-Source On-State Resistance (1) RDS(on) 0.055 0.080 /H9024 /H9024 VGS=-10V, I D=-3.5A VGS=-4.5V, I D=-2.9A Forward Transconductance (1)(3) gfs 8.7 S V DS=-15V,I D=-3.5A DYNAMIC (3) Input Capacitance Ciss 1580 pF VDS=-30 V, V GS=0V, f=1MHzOutput Capacitance C oss 160 pF Reverse Transfer Capacitance Crss 140 pF SWITCHING (2) (3) Turn-On Delay Time td(on) 4.6 ns VDD =-30V, I D=-1A RG 6.0Ω ,V GS=-10V Rise Time tr 5.8 ns Turn-Off Delay Time td(off) 55 ns Fall Time tf 23 ns Gate Charge Qg 23 nC V DS=-30V,V GS=-5V, ID=-3.5A Total Gate Charge Q g 44 nC VDS=-30V,V GS=-10V, ID=-3.5AGate-Source Charge Qgs 3.9 nC Gate-Drain Charge Qgd 9.8 nC SOURCE-DRAIN DIODE Diode Forward Voltage (1) VSD -0.85 -0.95 V T J=25°C, I S=-4.2A, VGS=0V Reverse Recovery Time (3) trr 37 ns T J=25°C, I F=-2.1A, di/dt= 100A/µ s Reverse Recovery Charge (3) Qrr 56 nC P-CHANNEL ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) NOTES (1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing.

N-CHANNEL TYPICAL CHARACTERISTICS

VGS=0 V f=1 M H z C Capacitance (pF) VDS -D r a i n-S o u r c eV o l t a g e( V ) 0 5 10 15 20 250 ID =3 . 5 A VDS= 15V G a t e - S o u r c eV o l t a g evG a t eC h a r g eCapacitance v Drain-Source Voltage Q - Charge (nC) VGS Gate-Source Voltage (V) N-CHANNEL TYPICAL CHARACTERISTICS

P-CHANNEL TYPICAL CHARACTERISTICS

P-CHANNEL TYPICAL CHARACTERISTICS ZXMC6A09DN8 ISSUE 4 - MAY 2005

Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc

700 Veterans Memorial Hwy

Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com © Zetex Semiconductors plc 2005 PACKAGE OUTLINE CONTROLLING DIMENSIONS ARE IN INCHES APPROX IN MILLIMETERS DIM Millimeters Inches DIM Millimeters Inches Min Max Min Max Min Max Min Max H 5.80 6.20 0.228 0.244 /H90520° 8° 0° 8° PACKAGE DIMENSIONS