ZXMC4559DN8

ZXMC4559DN8

Document overview

• Manufacturer or author: Diodes Inc
• PDF pages: 11

Technical content

Document number: DS34498 Rev. 7- 2 1 of 11 www.diodes.com March 2014 © Diodes Incorporated ZXMC4559DN8 ADVANCE INFORMATION NEW PRODUCT COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET Product Summary Device V(BR)DSS R DS(on) max ID TA = +25°C Q2 60V 55mΩ @ VGS = 10V 4.7A Q1 -60V 105mΩ @ VGS = -10V -3.9A

Description

This new generation MOSFET has been designed to minimize the on- state resistance (R DS(on)) and yet maintain superior switching performance, making it ideal fo r high efficiency power management applications.

Applications

• DC-DC Converters
• Power Management Functions
• Backlighting Features and Benefits
• Low Input Capacitance
• Low On-Resistance
• Fast Switching Speed
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability Mechanical Data
• Case: SO-8
• Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram
• Terminals: Finish – Tin Finish annealed over Copper leadframe Solderable per MIL-STD-202, Method 208
• Weight: 0.074 grams (approximate) Ordering Information (Note 4) Part Number Compliance Case Packaging ZXMC4559DN8TA Standard SO-8 500/Tape & Reel ZXMC4559DN8TC Standard SO-8 2,500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directiv e 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more in formation about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. Marking Information D1S1 G2 D2 1 4 8 5 4559 YY WW ZXMC Top View TOP VIEW Internal Schematic N-Channel MOSFET P-Channel MOSFET G 1 ZXMC4559 = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 14 = 2014) WW = Week (01 - 53)

Document number: DS34498 Rev. 7- 2 2 of 11 www.diodes.com March 2014 © Diodes Incorporated ZXMC4559DN8 ADVANCE INFORMATION NEW PRODUCT Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value_Q2 Value_Q1 Units Drain-Source Voltage VDSS 60 -60 V Gate-Source Voltage VGSS ±20 ±20 V Continuous Drain Current VGS = 10V SteadyState (Note 5) ID 3.6 -2.6 A t<10s (Note 6) ID 4.7 -3.9 A Maximum Body Diode Forward Current at t<10s (Note 6) IS 3.4 -3.2 A Pulsed Drain Current (300µs pulse, duty cycle = 2%) IDM 22.2 -18.3 A Pulsed Source Current (Body Diode) (300µs pulse, duty cycle = 2%) ISM 22.2 -18.3 A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Power Dissipation Linear Derating Factor (Note 5) PD 1.25 W mW/°C Power Dissipation Linear Derating Factor (Note 6) P D 2.1 W mW/°C Thermal Resistance, Junction to Ambient (Note 5) RθJA 100 °C/W Thermal Resistance, Junction to Ambient (Note 6) RθJA 58 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C

Document number: DS34498 Rev. 7- 2 3 of 11 www.diodes.com March 2014 © Diodes Incorporated ZXMC4559DN8 ADVANCE INFORMATION NEW PRODUCT

Document number: DS34498 Rev. 7- 2 4 of 11 www.diodes.com March 2014 © Diodes Incorporated ZXMC4559DN8 ADVANCE INFORMATION NEW PRODUCT Electrical Characteristics N-Channel Q2 (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS 60 ⎯ ⎯ V VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 1.0 µA VDS = 60V, VGS = 0V Gate-Source Leakage IGSS ⎯ ⎯ ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(th) 1.0 ⎯ ⎯ V VDS = VGS, ID = 250µA Static Drain-Source On-Resistance RDS(ON) ⎯ ⎯ 55 mΩ VGS = 10V, ID = 4.5A ⎯ ⎯ 75 VGS = 4.5V, ID = 4.0A Diode Forward Voltage VSD ⎯ 0.85 1.2 V VGS = 0V, IS = 5.5A Forward Transconductance gfs ⎯ 10.2 ⎯ S VDS=15V,ID=4.5A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss ⎯ 1063 ⎯ pF VDS = 30V, VGS = 0V, f = 1.0MHz Output Capacitance Coss ⎯ 104 ⎯ Reverse Transfer Capacitance Crss ⎯ 64 ⎯ Total Gate Charge (VGS = 5.0V) Q g ⎯ 11 ⎯ nC VDS = 30V, ID = 4.5A Total Gate Charge (VGS = 10V) Q g ⎯ 20.4 ⎯ Gate-Source Charge Qgs ⎯ 4.1 ⎯ Gate-Drain Charge Qgd ⎯ 5.1 ⎯ Turn-On Delay Time tD(on) ⎯ 3.5 ⎯ nS VDD = 30V, ID = 1.0A VGS = 10V, RG = 6.0Ω Turn-On Rise Time tr ⎯ 4.1 ⎯ Turn-Off Delay Time tD(off) ⎯ 26.2 ⎯ Turn-Off Fall Time tf ⎯ 10.6 ⎯ Body Diode Reverse Recovery Time trr ⎯ 22 ⎯ nS IF = 2.2A, di/dt = 100A/μs Body Diode Reverse Recovery Charge Qrr ⎯ 21.4 ⎯ nC IF = 2.2A, di/dt = 100A/μs

Document number: DS34498 Rev. 7- 2 5 of 11 www.diodes.com March 2014 © Diodes Incorporated ZXMC4559DN8 ADVANCE INFORMATION NEW PRODUCT N-Channel Typical Characteristics

Document number: DS34498 Rev. 7- 2 6 of 11 www.diodes.com March 2014 © Diodes Incorporated ZXMC4559DN8 ADVANCE INFORMATION NEW PRODUCT N-Channel Typical Characteristics (cont.)

Document number: DS34498 Rev. 7- 2 7 of 11 www.diodes.com March 2014 © Diodes Incorporated ZXMC4559DN8 ADVANCE INFORMATION NEW PRODUCT Electrical Characteristics P-Channel Q1 (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS -60 ⎯ ⎯ V VGS = 0V, ID = -250µA Zero Gate Voltage Drain Current IDSS ⎯ ⎯ -1.0 µA VDS = -60V, VGS = 0V Gate-Source Leakage IGSS ⎯ ⎯ ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(th) -1.0 ⎯ ⎯ V VDS = VGS, ID = -250µA Static Drain-Source On-Resistance RDS(ON) ⎯ ⎯ 85 mΩ VGS = -10V, ID = -2.9A Diode Forward Voltage VSD ⎯ -0.85 -0.95 V VGS = 0V, IS = -3.4A Forward Transconductance gfs ⎯ 7.2 ⎯ S VDS=-15V,ID=-2.9A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss ⎯ 1021 ⎯ pF VDS = -30V, VGS = 0V f = 1.0MHz Output Capacitance Coss ⎯ 83.1 ⎯ Reverse Transfer Capacitance Crss ⎯ 56.4 ⎯ Total Gate Charge (VGS = -5.0V) Q g ⎯ 12.1 ⎯ nC VDS = -30V, ID = -2.9A Total Gate Charge (VGS = -10V) Q g ⎯ 24.2 ⎯ Gate-Source Charge Qgs ⎯ 2.5 ⎯ Gate-Drain Charge Qgd ⎯ 3.7 ⎯ Turn-On Delay Time tD(on) ⎯ 3.5 ⎯ nS VDD = -30V, ID = -1.0A VGS = -10V, RG = 6.0Ω Turn-On Rise Time tr ⎯ 4.1 ⎯ Turn-Off Delay Time tD(off) ⎯ 35 ⎯ Turn-Off Fall Time tf ⎯ 10 ⎯ Body Diode Reverse Recovery Time trr ⎯ 29.2 ⎯ nS IS = -2.0A, dI/dt = 100A/μs Body Diode Reverse Recovery Charge Qrr ⎯ 39.6 ⎯ nC IS = -2.0A, dI/dt = 100A/μs Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. No t subject to product testing.

Document number: DS34498 Rev. 7- 2 8 of 11 www.diodes.com March 2014 © Diodes Incorporated ZXMC4559DN8 ADVANCE INFORMATION NEW PRODUCT P-Channel Typical Characteristics

Document number: DS34498 Rev. 7- 2 9 of 11 www.diodes.com March 2014 © Diodes Incorporated ZXMC4559DN8 ADVANCE INFORMATION NEW PRODUCT P-Channel Typical Characteristics (cont.)

Document number: DS34498 Rev. 7- 2 10 of 11 www.diodes.com March 2014 © Diodes Incorporated ZXMC4559DN8 ADVANCE INFORMATION NEW PRODUCT Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for latest version. SO-8 Dim Min Max A - 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h - 0.35 L 0.62 0.82 θ 0° 8 ° All Dimensions in mm Dimensions Value (in mm) X 0.60 Y 1.55 C1 5.4 C2 1.27 Gauge Plane Seating Plane Detail ‘A’ Detail ‘A’ EE1 h L D e b A 45° 7°~9° 0.254 X Y

Document number: DS34498 Rev. 7- 2 11 of 11 www.diodes.com March 2014 © Diodes Incorporated ZXMC4559DN8 ADVANCE INFORMATION NEW PRODUCT IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. Diodes Incorporated does not assume any liability ari sing out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Inco rporated products for any unintended or una uthorized application, Customers shall i ndemnify and hold Diodes Incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of t his document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporate d and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2014, Diodes Incorporated www.diodes.com