ZXMC3AMC

ZXMC3AMC

Document overview

• Manufacturer or author: Diodes Incorporated
• PDF pages: 11

Technical content

Document number: DS35088 Rev. 1 - 2 1 of 11 www.diodes.com December 2010 © Diodes Incorporated ZXMC3AMC A Product Line of Diodes Incorporated 30V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device V(BR)DSS RDS(on) max ID max TA = 25°C (Notes 4 & 7) Q1 30V 120mΩ @ VGS = 10V 3.7A 180mΩ @ VGS = 4.5V 3.0A Q2 -30V 210mΩ @ VGS = -10V -2.7A 330mΩ @ VGS = -4.5V -2.2A Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

• MOSFET gate drive
• LCD backlight inverters
• Motor control
• Portable applications Features and Benefits
• Low profile package, for thin applications
• Low R θJA, thermally efficient package
• 6mm footprint, 50% smaller than TSOP6 and SOT23-6
• Low on-resistance
• Fast switching speed
• “Lead-Free”, RoHS Compliant (Note 1)
• Halogen and Antimony Free. "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability Mechanical Data
• Case: DFN3020B-8
• Terminals: Pre-Plated NiPdAu leadframe
• Nominal package height: 0.8mm
• UL Flammability Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Solderable per MIL-STD-202, Method 208
• Weight: 0.013 grams (approximate) Ordering Information (Note 3) Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel ZXMC3AMCTA C01 7 8 3000 Notes: 1. No purposefully added lead 2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com. Marking Information Bottom View Pin-Out D2 D2 D1 D1 G2 S2 G1 S1 D2 D1 Pin 1 Equivalent Circuit Q1 N-Channel Q2 P-Channel Top View Bottom View DFN3020B-8 C01 = Product Type Marking Code Top view, Dot Denotes Pin 1 C01

Document number: DS35088 Rev. 1 - 2 2 of 11 www.diodes.com December 2010 © Diodes Incorporated ZXMC3AMC A Product Line of Diodes Incorporated Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol N-channel – Q1 P-channel – Q2 Unit Drain-Source Voltage VDSS 30 -30 V Gate-Source Voltage VGSS ±20 ±20 Continuous Drain Current VGS = 10V (Notes 4 & 7) ID 3.7 -2.7 A TA = 70°C (Notes 4 & 7) 3.0 -2.2 Pulsed Drain Current VGS = 10V (Notes 6 & 7) IDM 13 -9.2 Continuous Source Current (Body diode) (Notes 4 & 7) IS 3.2 -2.8 Pulse Source Current (Body diode) (Notes 6 & 7) ISM 13 -9.2 Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol N-channel – Q1 P-channel – Q2 Unit Power Dissipation Linear Derating Factor (Notes 3 & 7) P D 1.50 W mW/°C (Notes 4 & 7) 2.45 19.6 (Notes 5 & 7) 1.13 (Notes 5 & 8) 1.70 13.6 Thermal Resistance, Junction to Ambient (Notes 3 & 7) RθJA 83.3 °C/W (Notes 4 & 7) 51.0 (Notes 5 & 7) 111 (Notes 5 & 8) 73.5 Thermal Resistance, Junction to Lead (Notes 7 & 9) RθJL 17.1 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 3. For a device surface mounted on 28mm x 28mm (8cm 2) FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is measured when operating in a steady-state condition. The heatsink is split in half with the exposed drain pads connected to each half. 4. Same as note (3) except the device is measured at t < 5 sec. 5. Same as note (3), except the device is surface mounted on 31mm x 31mm (10cm2) FR4 PCB with high coverage of single sided 1oz copper. 6. Same as note (3), except the device is pulsed with D = 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature. 7. For a dual device with one active die. 8. For dual device with 2 active die running at equal power. 9. Thermal resistance from junction to solder-point (at the end of the drain lead).

Document number: DS35088 Rev. 1 - 2 3 of 11 www.diodes.com December 2010 © Diodes Incorporated ZXMC3AMC A Product Line of Diodes Incorporated Thermal Characteristics 11 0 10m 100m 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 100µ 1m 10m 100m 1 10 100 1k 0.1 1 10 100 100 125 150 175 200 225 0.1 1 10 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 11 0 10m 100m 8 sq cm 2oz Cu One active die 100us 100ms RDS(ON) Limited 1ms N-channel Safe Operating Area Single Pulse, Tamb=25°C DC 10ms ID Drain Current (A) VDS Drain-Source Voltage (V) 8 sq cm 2oz Cu One active die Single Pulse, Tamb=25°C 10 sq cm 1oz Cu One active die 8 sq cm 2oz Cu One active die 10 sq cm 1oz Cu Two active die Derating Curve Max Power Dissipation (W) Temperature (°C) 8 sq cm 2oz Cu One active die D=0.2 D=0.5 D=0.1 Transient Thermal Impedance Single Pulse D=0.05 Thermal Resistance (°C/W) Pulse Width (s) 1oz Cu Two active die 1oz Cu One active die 2oz Cu One active die 2oz Cu Two active die Thermal Resistance v Board AreaThermal Resistance (°C/W) Board Cu Area (sqcm) 2oz Cu Two active die 1oz Cu Two active die1oz Cu One active die 2oz Cu Two active die 2oz Cu One active die Power Dissipation v Board Area Tamb=25°C Tj max=150°C Continuous PD Dissipation (W) Board Cu Area (sqcm) DC 1s 100ms 10ms 1ms 100us RDS(ON) Limited P-channel Safe Operating Area -VDS Drain-Source Voltage (V) -ID Drain Current (A)

Document number: DS35088 Rev. 1 - 2 4 of 11 www.diodes.com December 2010 © Diodes Incorporated ZXMC3AMC A Product Line of Diodes Incorporated Electrical Characteristics – Q1 N-Channel @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS 30 - - V ID = 250μA, VGS = 0V Zero Gate Voltage Drain Current IDSS - - 0.5 μA VDS = 30V, VGS = 0V Gate-Source Leakage IGSS - - ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) 1.0 - 3.0 V ID = 250μA, VDS = VGS Static Drain-Source On-Resistance (Note 10) RDS (ON) - 0.100 0.120 Ω VGS = 10V, ID = 2.5A 0.140 0.180 VGS = 4.5V, ID = 2.0A Forward Transconductance (Note 10 & 11) gfs - 3.5 - S VDS = 10V, ID = 2.5A Diode Forward Voltage (Note 10) VSD - 0.85 0.95 V IS = 1.7A, VGS = 0V Reverse Recover Time (Note 11) trr - 17.7 - ns IS = 2.5A, di/dt= 100A/µs Reverse Recover Charge (Note 11) Qrr - 13.0 - nC DYNAMIC CHARACTERISTICS (Note 11) Input Capacitance Ciss - 190 - pF VDS = 25V, VGS = 0V, f = 1.0MHz Output Capacitance Coss - 38 - pF Reverse Transfer Capacitance Crss - 20 - pF Total Gate Charge (Note 12) Qg - 2.3 - nC VGS = 4.5V VDS = 15V ID = 2.5A Total Gate Charge (Note 12) Qg - 3.9 - nC VGS = 10V Gate-Source Charge (Note 12) Qgs - 0.6 - nC Gate-Drain Charge (Note 12) Qgd - 0.9 - nC Turn-On Delay Time (Note 12) tD(on) - 1.7 - ns VDS = 15V, ID = 2.5A VGS = 10V, RG = 6Ω Turn-On Rise Time (Note 12) tr - 2.3 - ns Turn-Off Delay Time (Note 12) tD(off) - 6.6 - ns Turn-Off Fall Time (Note 12) tf - 2.9 - ns Notes: 10. Measured under pulsed conditions. Width ≤ 300µs. Duty cycle ≤ 2%. 11. For design aid only, not subject to production testing. 12. Switching characteristics are independent of operating junction temperature.

Document number: DS35088 Rev. 1 - 2 5 of 11 www.diodes.com December 2010 © Diodes Incorporated ZXMC3AMC A Product Line of Diodes Incorporated Typical Electrical Characteristics – Q1 N-Channel 0.1 1 10 0.1 0.1 1 10 0.1 0.1 -50 0 50 100 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1 10 0.1 0.1 5V7V 4.5V 3.5V 2.5V Output Characteristics T = 25°C VGS 10V ID Drain Current (A) VDS Drain-Source Voltage (V) 2.5V 4.5V 7V10V Output Characteristics T = 150°C VGS 3.5V ID Drain Current (A) VDS Drain-Source Voltage (V) Typical Transfer Characteristics VDS = 10V T = 25°C T = 150°C ID Drain Current (A) VGS Gate-Source Voltage (V) Normalised Curves v Temperature RDS(on) VGS = 10V ID = 2.5A VGS(th) VGS = VDS ID = 250uA Normalised RDS(on) and VGS(th) Tj Junction Temperature (°C) 4.5V 10V 3.5V2.5V On-Resistance v Drain Current T = 25°C 3V VGS RDS(on) Drain-Source On-Resistance (W) ID Drain Current (A) T = 150°C T = 25°C Source-Drain Diode Forward Voltage VSD Source-Drain Voltage (V) ISD Reverse Drain Current (A)

Document number: DS35088 Rev. 1 - 2 6 of 11 www.diodes.com December 2010 © Diodes Incorporated ZXMC3AMC A Product Line of Diodes Incorporated Typical Electrical Characteristics – Q1 N-Channel - Continued 0.1 1 10 100 150 200 250 300 CRSS COSS CISS VGS = 0V f = 1MHz C Capacitance (pF) VDS - Drain - Source Voltage (V) 01234 ID = 2.5A VDS = 15V Gate-Source Voltage v Gate ChargeCapacitance v Drain-Source Voltage Q - Charge (nC) VGS Gate-Source Voltage (V) Test Circuits Current regulator Charge Gate charge test circuit Switching time test circuit B a s i cg a t ec h a r g ew a v e f o r m Switching time waveforms D.U.T 50k12V Sameas D.U.T VGS VGS VDS VG QGS QGD QG VGS 90% 10% t(on)t(on) td(on) tr trt VDS DDV RD RG VDS ID IG d(off)

Document number: DS35088 Rev. 1 - 2 7 of 11 www.diodes.com December 2010 © Diodes Incorporated ZXMC3AMC A Product Line of Diodes Incorporated Electrical Characteristics – Q2 P-Channel @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS -30 - - V ID = -250μA, VGS = 0V Zero Gate Voltage Drain Current IDSS - - -0.5 μA VDS = -30V, VGS = 0V Gate-Source Leakage IGSS - - ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) -1.0 - -3.0 V ID = -250μA, VDS = VGS Static Drain-Source On-Resistance (Note 13) RDS (ON) - 0.150 0.210 Ω VGS = -10V, ID = -1.4A Forward Transconductance (Note 13 & 14) gfs - 2.48 - S VDS = -15V, ID = -1.4A Diode Forward Voltage (Note 13) VSD - -0.85 -0.95 V IS = -1.1A, VGS = 0V Reverse Recover Time (Note 14) trr - 18.6 - ns IS = -0.95A, di/dt = 100A/µs Reverse Recover Charge (Note 14) Qrr - 14.8 - nC DYNAMIC CHARACTERISTICS (Note 14) Input Capacitance Ciss - 206 - pF VDS = -15V, VGS = 0V, f = 1.0MHz Output Capacitance Coss - 59.3 - pF Reverse Transfer Capacitance Crss - 49.2 - pF Total Gate Charge (Note 15) Qg - 3.8 - nC VGS = -4.5V VDS = -15V ID = -1.4A Total Gate Charge (Note 15) Qg - 6.4 - nC VGS = -10V Gate-Source Charge (Note 15) Qgs - 0.69 - nC Gate-Drain Charge (Note 15) Qgd - 2.0 - nC Turn-On Delay Time (Note 15) tD(on) - 1.5 - ns VDS = -15V, ID = -1A VGS = -10V, RG = 6Ω Turn-On Rise Time (Note 15) tr - 2.8 - ns Turn-Off Delay Time (Note 15) tD(off) - 11.3 - ns Turn-Off Fall Time (Note 15) tf - 7.5 - ns Notes: 13. Measured under pulsed conditions. Width ≤ 300µs. Duty cycle ≤ 2%. 14. For design aid only, not subject to production testing. 15. Switching characteristics are independent of operating junction temperature.

Document number: DS35088 Rev. 1 - 2 8 of 11 www.diodes.com December 2010 © Diodes Incorporated ZXMC3AMC A Product Line of Diodes Incorporated Typical Electrical Characteristics – Q2 P-Channel 0.1 1 10 0.01 0.1 0.1 1 10 0.01 0.1 0.1 -50 0 50 100 150 0.6 0.8 1.0 1.2 1.4 0.1 1 10 0.1 0.01 0.1 10V 3.5V -VGS 2.5V Output Characteristics T = 25°C -VGS -ID Drain Current (A) -VDS Drain-Source Voltage (V) 3.5V 5V10V 1.5V Output Characteristics T = 150°C -ID Drain Current (A) -VDS Drain-Source Voltage (V) Typical Transfer Characteristics -VDS = 10V T = 25°C T = 150°C -ID Drain Current (A) -VGS Gate-Source Voltage (V) Normalised Curves v Temperature RDS(on) VGS = -10V ID = - 1.4A VGS(th) VGS = VDS ID = -250uA Normalised RDS(on) and VGS(th) Tj Junction Temperature (°C) 10V 3.5V 2.5V On-Resistance v Drain Current T = 25°C-VGS RDS(on) Drain-Source On-Resistance (Ω) -ID Drain Current (A) T = 150°C T = 25°C Source-Drain Diode Forward Voltage -VSD Source-Drain Voltage (V) -ISD Reverse Drain Current (A)

Document number: DS35088 Rev. 1 - 2 9 of 11 www.diodes.com December 2010 © Diodes Incorporated ZXMC3AMC A Product Line of Diodes Incorporated Typical Electrical Characteristics – Q2 P-Channel - Continued 11 0 100 150 200 250 300 350 CRSS COSS CISS VGS = 0V f = 1MHz C Capacitance (pF) -VDS - Drain - Source Voltage (V) 0123456 ID = -1.4A VDS = -15V Gate-Source Voltage v Gate ChargeCapacitance v Drain-Source Voltage Q - Charge (nC) -VGS Gate-Source Voltage (V) Test Circuits Current regulator Charge Gate charge test circuit Switching time test circuit Basic gate charge waveform Switching time waveforms D.U.T 50k 0.2/H9262F 12V Same as D.U.T VGS VGS VDS VG QGS QGD QG VGS 90% 10% t(on) t(on) td(on) tr tr td(off) VDS VDD RD RG Pulse width /H11021 1/H9262S Duty factor 0.1% VDS ID IG

Document number: DS35088 Rev. 1 - 2 10 of 11 www.diodes.com December 2010 © Diodes Incorporated ZXMC3AMC A Product Line of Diodes Incorporated Package Outline Dimensions Suggested Pad Layout DFN3020B-8 Dim Min Max Typ A 0.77 0.83 0.80 A1 0 0.05 0.02 A3 - - 0.15 b 0.25 0.35 0.30 D 2.95 3.075 3.00 D2 0.82 1.02 0.92 D4 1.01 1.21 1.11 e - - 0.65 E 1.95 2.075 2.00 E2 0.43 0.63 0.53 L 0.25 0.35 0.30 Z - - 0.375 All Dimensions in mm Dimensions Value (in mm) C 0.650 G 0.285 G1 0.090 X 0.400 X1 1.120 Y 0.730 Y1 0.500 Y2 0.365 b e L D E A Z D4 D4 C X Y G

Document number: DS35088 Rev. 1 - 2 11 of 11 www.diodes.com December 2010 © Diodes Incorporated ZXMC3AMC A Product Line of Diodes Incorporated IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to ma ke modifications, enhancements, improvements, corrections or ot her changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described her ein; neither does Diodes Incor porated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall i ndemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for us e as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporate d and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2010, Diodes Incorporated www.diodes.com