ZXMC3A18DN8 DIODES | Alldatasheet

Document overview

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Technical content

Features

  • Low on-resistance  Fast switching speed  Low threshold  Low gate drive  Low profile SOIC package

Applications

M o t o r D r i v e  LCD backlighting

Ordering information

(inches) Tape width (mm) Quantity per reel ZXMC3A18DN8TC 13 12 2500 Q1 N-Channel Q2 P-Channel D1 S1 SO8

Issue 2 - September 2007 2 www.zetex.com © Zetex Semiconductors plc 2007 Absolute maximum ratings NOTES: (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured at t /H1134910 sec. (c) Repetitive rating - pulse width limited by maximum junction temperature. Pulse width 300 /H9262s, d<= 0.02. Refer to transient thermal impedance graph. (d) For device with one active die. (e) For device with two active die running at equal power. Parameter Symbol N-channel P-channel Unit Drain-source voltage V DSS 30 -30 V Gate-source voltage V GS ±20 ±20 V Continuous drain current (VGS= 10V; Tamb=25°C)(b)(d) ID 7.6 -6.3 A (VGS= 10V; Tamb=70°C)(b)(d) 6.1 -5.0 (VGS= 10V; Tamb=25°C)(a)(d) 5.8 -4.8 Pulsed drain current(c) IDM 37 -30 A Continuous source current (body diode)(b) IS 3.6 3.2 A Pulsed source current (body diode)(c) ISM 37 30 A Power dissipation at Tamb =25°C(a)(d) PD 1.25 W Linear derating factor 10 mW/°C Power dissipation at Tamb =25°C(a)(e) PD 1.8 W Linear derating factor 14 mW/°C Power dissipation at Tamb =25°C(b)(d) PD 2.1 W Linear derating factor 17 mW/°C Operating and storage temperature range T j, Tstg -55 to +150 °C Thermal resistance Parameter Symbol Value Unit Junction to ambient(a)(d) R/H9052JA 100 °C/W Junction to ambient(a)(e) R/H9052JA 70 °C/W Junction to ambient(b)(d) R/H9052JA 60 °C/W

Issue 2 - September 2007 3 www.zetex.com © Zetex Semiconductors plc 2007 Characteristics

Issue 2 - September 2007 4 www.zetex.com © Zetex Semiconductors plc 2007 N-channel Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symbol Min. Typ. Max. Unit Conditions Static Drain-source breakdown voltage V(BR)DSS 30 V I D= 250/H9262A, VGS=0V Zero gate voltage drain current I DSS 0.5 /H9262AV DS=30V, VGS=0V Gate-body leakage I GSS 100 nA V GS=±20V, VDS=0V Gate-source threshold voltage V GS(th) 1.0 V I D= 250/H9262A, VDS=VGS Static drain-source on-state resistance (*) NOTES: (*) Measured under pulsed conditions. Pulse width /H11349300/H9262s; duty cycle /H113492%. RDS(on) 0.025 /H9024 VGS= 10V, ID= 5.8A 0.030 V GS= 4.5V, ID= 5.3A Forward transconductance(*)(‡) gfs 17.5 S V DS= 15V, ID= 5.8A Dynamic(‡) Input capacitance C iss 1800 pF V DS= 25V, VGS=0V f=1MHzOutput capacitance C oss 289 pF Reverse transfer capacitance C rss 178 pF Switching (†) (‡) (†) Switching characteristics are independent of operating junction temperature. (‡) For design aid only, not subject to production testing. Turn-on-delay time t d(on) 5.5 ns V DD= 15V, ID= 6A RG ≅ 6.0/H9024, VGS= 10VRise time t r 8.7 ns Turn-off delay time t d(off) 33 ns Fall time t f 8.5 ns Gate charge Q g 19.4 nC V DS= 15V, VGS= 5V ID= 3.5A Total gate charge Q g 36 nC V DS= 15V, VGS= 10V ID= 3.5AGate-source charge Q gs 5.5 nC Gate drain charge Q gd 7.0 nC Source-drain diode Diode forward voltage(*) VSD 0.95 V T j=25°C, IS= 6A, VGS=0V Reverse recovery time(‡) trr 20.5 ns T j=25°C, IS= 6A, di/dt=100A//H9262sReverse recovery charge(‡) Qrr 41.5 nC

Issue 2 - September 2007 5 www.zetex.com © Zetex Semiconductors plc 2007 Typical characteristics

Issue 2 - September 2007 6 www.zetex.com © Zetex Semiconductors plc 2007 Typical characteristics Current regulator Charge Gate charge test circuit Switching time test circuit Basic gate charge waveform Switching time waveforms D.U.T 50k12V Same as D.U.T VGS VGS VDS VG QGS QGD QG VGS 90% 10% t(on)t(on) td(on) tr trtd(off) VDS DDV RD RG VDS ID IG

Issue 2 - September 2007 7 www.zetex.com © Zetex Semiconductors plc 2007 P-channel Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symbol Min. Typ. Max. Unit Conditions Static Drain-source breakdown voltage V(BR)DSS -30 V I D= -250/H9262A, VGS=0V Zero gate voltage drain current I DSS -1.0 /H9262AV DS= -30V, VGS=0V Gate-body leakage I GSS 100 nA V GS=±20V, VDS=0V Gate-source threshold voltage V GS(th) -1.0 V I D= -250/H9262A, VDS=VGS Static drain-source on-state resistance (*) NOTES: (*) Measured under pulsed conditions. Pulse width /H11349300/H9262s; duty cycle /H113492%. RDS(on) 0.035 W V GS= -10V, ID= -4.8A 0.050 V GS= -4.5V, ID= -4.0A Forward transconductance(*)(‡) gfs 8.6 S V DS= -15V, ID= -4.8A Dynamic(‡) Input capacitance C iss 1603 pF V DS= -15V, VGS=0V f=1MHzOutput capacitance C oss 434 pF Reverse transfer capacitance C rss 388 pF Switching (†) (‡) (†) Switching characteristics are independent of operating junction temperature. (‡) For design aid only, not subject to production testing. Turn-on-delay time t d(on) 4.8 ns V DD= -15V, ID= -1A RG @ 6.0/H9024, VGS= 10VRise time t r 9.5 ns Turn-off delay time t d(off) 60 ns Fall time t f 38 ns Gate charge Q g 25 nC V DS= -15V, VGS= -5V ID= -4.8A Total gate charge Q g 45 nC V DS= -15V, VGS= -10V ID= -4.8AGate-source charge Q gs 5.1 nC Gate drain charge Q gd 11.5 nC Source-drain diode Diode forward voltage(*) VSD 0.82 -0.95 V T j=25°C, IS= -3.7 VGS=0V Reverse recovery time(‡) trr 32.5 ns T j=25°C, IS= -2.2, di/dt=100A//H9262sReverse recovery charge(‡) Qrr 18.4 nC

Issue 2 - September 2007 8 www.zetex.com © Zetex Semiconductors plc 2007 Typical characteristics

Issue 2 - September 2007 9 www.zetex.com © Zetex Semiconductors plc 2007 Typical characteristics Current regulator Charge Gate charge test circuit Switching time test circuit Basic gate charge waveform Switching time waveforms D.U.T 50k 0.2/H9262F 12V Same as D.U.T VGS VGS VDS VG QGS QGD QG VGS 90% 10% t(on) t(on) td(on) tr tr td(off) VDS VDD RD RG Pulse width /H11021 1/H9262S Duty factor 0.1% VDS ID IG

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Issue 2 - September 2007 11 www.zetex.com © Zetex Semiconductors plc 2007 Note: Controlling dimensions are in inches. Approximate dimensions are provided in millimeters DIM Inches Millimeters DIM Inches Millimeters H 0.228 0.244 5.80 6.20 /H9052 0° 8° 0° 8°

Issue 2 - September 2007 12 www.zetex.com © Zetex Semiconductors plc 2007 Zetex sales offices Europe Zetex GmbH Kustermannpark Balanstraße 59 D-81541 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc

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Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com © 2007 Published by Zetex Semiconductors plc Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The circuits in this design/application note are offered as desi gn ideas. It is the responsibility of the user to ensure that t he circuit is fit for the user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoev er is assumed by Zetex with respect to the accuracy or use of such in formation, or infringement of patents or other intellectual prop erty rights arising from such use or otherwise. Zetex does not assume any le gal responsibility or will not be held legally liable (whether in contract, tort (including negligence), breach of statutory duty, restricti on or otherwise) for any damages, loss of profit, business, con tract, opportunity or consequential loss in the use of these circuit applications, under any circumstances. Life support Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Zetex Semiconductors plc. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support devi ce or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Reproduction The product specifications contained in this publication are issu ed to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. Terms and Conditions All products are sold subjects to Zetex’ terms and conditions of sale, and this disclaimer (save in the event of a conflict bet ween the two when the terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement. For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Zetex sales office. Quality of product Zetex is an ISO 9001 and TS16949 certified semiconductor manufacturer. To ensure quality of service and products we strongly advise the purchase of parts dire ctly from Zetex Semiconductors or one of our regionally authorized distributors. For a complete listing of authorized distributors please visit: www.zetex.com/salesnetwork Zetex Semiconductors does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales channels. ESD (Electrostatic discharge) Semiconductor devices are susceptible to damage by ESD. 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