ZXMC10A816N8
Document overview
- Manufacturer or author: Diodes Incorporated
- PDF pages: 11
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100V Complementary in SO-8 Package Low On-Resistance Fast Switching Speed Low Voltage (VGS = 4.5V) Gate Drive Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at https://www.diodes.com/products/automotive/automotive- products/. This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/ Mechanical Data Package: SO-8 Package Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – Matte Tin Annealed over Copper Lead Frame. Solderable per MIL-STD-202, Method 208 Weight: 0.074 grams (Approximate) Ordering Information (Note 4) Part Number Package Reel Size (inches) Tape Width (mm) Packing Qty. Carrier ZXMC10A816N8TA SO-8 7 12 500 Reel ZXMC10A816N8TC SO-8 13 12 2,500 Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen - and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes -packaging/. Equivalent Circuit Q1 N-Channel Q2 P-Channel D1S1 Top view Top View Top View SO-8 THE ZXMC10A816N8 IS NOT RECOMMENDED FOR NEW DESIGNS. PLEASE USE THE DMC10H172SSD.
Document number: DS33497 Rev. 4 - 3 2 of 11 www.diodes.com January 2024 © 2024 Copyright Diodes Incorporated. All Rights Reserved. ZXMC10A816N8 Marking Information Maximum Ratings (@TA = +25°C, unless otherwise specified.) Parameter Symbol N-Channel P-Channel Q2 Unit Drain-Source Voltage VDSS 100 -100 V Gate-Source Voltage VGS ±20 ±20 V Continuous Drain Current @ VGS = 10V; TA = +25°C (Notes 6, 8) @ VGS = 10V; TA = +70°C (Notes 6, 8) @ VGS = 10V; TA = +25°C (Notes 5, 8) @ VGS = 10V; TA = +25°C (Notes 5, 9) @ VGS = 10V; TL = +25°C (Notes 8, 10) ID 2.1 1.7 1.7 2.0 2.3 -2.2 -1.8 -1.7 -2.0 -2.4 A Pulsed Drain Current @ VGS = 10V; TA = +25°C (Notes 7, 8) IDM 9.4 -10.5 A Continuous Source Current (Body Diode) at TA = +25°C (Notes 6, 8) IS 3.0 -3.1 A Pulsed Source Current (Body Diode) at TA = +25°C (Notes 7, 8) ISM 9.4 -10.5 A Avalanche Current (Note 11) L = 0.1mH IAS 1.2 -12 A Power Dissipation at TA = +25°C (Notes 5, 8) Linear Derating Factor PD 1.3 10.0 W mW/C Power Dissipation at TA = +25°C (Notes 5, 9) Linear Derating Factor PD 1.8 14.2 W mW/C Power Dissipation at TA = +25°C (Notes 6, 8) Linear Derating Factor PD 2.1 16.7 W mW/C Power Dissipation at TL = +25°C (Notes 8, 10) Linear Derating Factor PD 2.4 18.9 2.6 20.4 W mW/C Operating and Storage Temperature Range TJ, TSTG -55 to +150 C Thermal Characteristics Parameter Symbol Value Unit Junction to Ambient (Notes 5, 8) RJA 100 C/W Junction to Ambient (Notes 5, 9) RJA 70 C/W Junction to Ambient (Notes 6, 8) RJA 60 C/W Junction to Lead (Notes 8, 10) RJL 53 49 C/W Notes: 5. For a device surface-mounted on 25mm x 25mm x 1.6mm FR-4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 6. Same as Note 5, except the device is measured at t 10 sec. 7. Same as Note 5, except the device is pulsed with D = 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature. 8. For a dual device with one active die. 9. For a device with two active dies running at equal power. 10. Thermal resistance from junction to solder-point (at the end of the drain lead); the device is operating in a steady -state condition. 11. IAS rating is based on low frequency and duty cycles to keep TJ = +25°C. 1 4 8 5 10A816 YY WW ZXMC ZXMC10A816 = Product Type Marking Code YY WW = Date Code Marking YY = Year (ex: 24 = 2024) WW = Week (01 to 53) Top View
Document number: DS33497 Rev. 4 - 3 3 of 11 www.diodes.com January 2024 © 2024 Copyright Diodes Incorporated. All Rights Reserved. ZXMC10A816N8 Thermal Characteristics 0.1 1 10 100 10m 100m 0 25 50 75 100 125 1500.0 0.5 1.0 1.5 2.0 100μ 1m 10m 100m 1 10 100 1k0 100 100μ 1m 10m 100m 1 10 100 1k 100 0.1 1 10 100 10m 100m Notes 5, 8 100s 100ms RDS(ON) Limited 1ms N-channel Safe Operating Area Single Pulse, TA=25 o C DC 10ms ID Drain Current (A) VDS Drain-Source Voltage (V) One active die Two active die Derating Curve Max Power Dissipation (W) Temperature ( o D=0.2 D=0.5 D=0.1 Transient Thermal Impedance Single Pulse D=0.05 Thermal Resistance ( o C/W) Pulse Width (s) Single Pulse TA=25 o C Pulse Power Dissipation Maximum Power (W) Pulse Width (s) Notes 5, 8 Single Pulse, TA=25 o C DC 100s 1ms10ms 100ms RDS(ON) Limited P-channel Safe Operating Area -VDS Drain-Source Voltage (V) -ID Drain Current (A) µ µ
Document number: DS33497 Rev. 4 - 3 4 of 11 www.diodes.com January 2024 © 2024 Copyright Diodes Incorporated. All Rights Reserved. ZXMC10A816N8 Electrical Characteristics Q1 N-Channel (@TA = +25°C, unless otherwise specified.) Parameter Symbol Min Typ Max Unit Conditions Static Drain-Source Breakdown Voltage BVDSS 100 — — V ID = 250µA, VGS = 0V Zero Gate Voltage Drain Current IDSS — — 0.5 µA VDS = 100V, VGS = 0V Gate-Body Leakage IGSS — — 100 nA VGS = ±20V, VDS = 0V Gate-Source Threshold Voltage VGS(TH) 1.7 — 2.4 V ID = 250µA, VDS = VGS Static Drain-Source On-State Resistance (Note 12) RDS(ON) — 0.170 0.210 0.230 0.300 Ω VGS = 10V, ID = 1.0A VGS = 4.5V, ID = 0.5A Forward Transconductance (Notes 12, 14) gfs — 4.8 — S VDS = 15V, ID = 1.6A Dynamic Capacitance (Note 14) Input Capacitance Ciss — 497 — pF VDS = 50V, VGS = 0V f = 1MHz Output Capacitance Coss — 29 — pF Reverse Transfer Capacitance Crss — 18 — pF Switching (Notes 13, 14) Turn-On Delay Time tD(ON) — 2.9 — ns VDD = 50V, VGS = 10V ID = 1.0A RG 6.0Ω Rise Time tR — 2.1 — ns Turn-Off Delay Time tD(OFF) — 12.1 — ns Fall Time tF — 5.0 — ns Gate Charge (Note 14) Total Gate Charge Qg — 9.2 — nC VDS = 50V, VGS = 10V ID = 1.6A Gate-Source Charge Qgs — 1.7 — nC Gate-Drain Charge Qgd — 2.5 — nC Source-Drain Diode Diode Forward Voltage (Note 12) VSD — 0.85 0.95 V IS = 1.7A, VGS = 0V Reverse Recovery Time (Note 14) tRR — 32 — ns IS = 1.7A, di/dt = 100A/µs Reverse Recovery Charge (Note 14) QRR — 40 — nC Gate Resistance Gate Resistance RG 0 — 3 Ω VDS = 0V, VGS = 0V, f = 1.0MHz Notes: 12. Measured under pulsed conditions. Pulse width 300µs; duty cycle 2%. 13. Switching characteristics are independent of operating junction temperature. 14. For design aid only, not subject to production testing.
Document number: DS33497 Rev. 4 - 3 5 of 11 www.diodes.com January 2024 © 2024 Copyright Diodes Incorporated. All Rights Reserved. ZXMC10A816N8 Typical Characteristics Q1 N-Channel 0.1 1 10 0.01 0.1 0.1 1 10 0.01 0.1 0.1 -50 0 50 100 1500.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 0.01 0.1 1 100.1 0.1 3.5V 10V 5V 4.5V VGS Output Characteristics T = 25 o C VGS ID Drain Current (A) VDS Drain-Source Voltage (V) 2.5V 4.5V 10V 3.5V Output Characteristics T = 150 o C ID Drain Current (A) VDS Drain-Source Voltage (V) Typical Transfer Characteristics VDS = 10V T = 25 o C T = 150 o C ID Drain Current (A) VGS Gate-Source Voltage (V) Normalised Curves v Temperature RDS(ON) VGS = 10V ID = 1.6A VGS(TH) VGS = VDS ID = 250A Normalised RDS(ON) and VGS(TH) TJ Junction Temperature ( o 4.5V 10V 3.5V On-Resistance v Drain Current T = 25 o C VGS RDS(ON) Drain-Source On-Resistance ID Drain Current (A) T = 150 o C T = 25 o C Source-Drain Diode Forward Voltage VSD Source-Drain Voltage (V) ISD Reverse Drain Current (A)
Document number: DS33497 Rev. 4 - 3 6 of 11 www.diodes.com January 2024 © 2024 Copyright Diodes Incorporated. All Rights Reserved. ZXMC10A816N8 Typical Characteristics Q1 N-Channel (continued) Test Circuits 0.1 1 10 1000 100 200 300 400 500 600 700 Crss Coss Ciss VGS = 0V f = 1MHz C Capacitance (pF) VDS - Drain - Source Voltage (V) 0 2 4 6 8 100 ID = 1.6A VDS = 50V Gate-Source Voltage v Gate ChargeCapacitance v Drain-Source Voltage Q - Charge (nC) VGS Gate-Source Voltage (V)
Document number: DS33497 Rev. 4 - 3 7 of 11 www.diodes.com January 2024 © 2024 Copyright Diodes Incorporated. All Rights Reserved. ZXMC10A816N8 Electrical Characteristics Q2 P-Channel (@TA = +25°C, unless otherwise specified.) Parameter Symbol Min Typ Max Unit Conditions Static Drain-Source Breakdown Voltage BVDSS -100 — — V ID = -250µA, VGS = 0V Zero Gate Voltage Drain Current IDSS — — -0.5 µA VDS = -100V, VGS = 0V Gate-Body Leakage IGSS — — -100 nA VGS = ±20V, VDS = 0V Gate-Source Threshold Voltage VGS(TH) -2.0 — -3.0 V ID = -250µA, VDS = VGS Static Drain-Source On-State Resistance (Note 12) RDS(ON) — 0.170 0.250 0.235 0.320 Ω VGS = -10V, ID = -1.0A VGS = -4.5V, ID = -0.5A Forward Transconductance (Notes 12, 14) gfs — 4.7 — S VDS = -15V, ID = -2.1A Dynamic Capacitance (Note 14) Input Capacitance Ciss — 717 — pF VDS = -50V, VGS = 0V f = 1MHz Output Capacitance Coss — 55 — pF Reverse Transfer Capacitance Crss — 46 — pF Switching (Notes 13, 14) Turn-On Delay Time tD(ON) — 4.3 — ns VDD = -50V, VGS = -10V ID = -1A RG 6.0Ω Rise Time tR — 5.2 — ns Turn-Off Delay Time tD(OFF) — 20 — ns Fall Time tF — 12 — ns Gate Charge (Note 14) Total Gate Charge Qg — 16.5 — nC VDS = -50V, VGS = -10V ID = -2.1A Gate-Source Charge Qgs — 2.5 — nC Gate-Drain Charge Qgd — 5.4 — nC Source-Drain Diode Diode Forward Voltage (Note 12) VSD — -0.85 -0.95 V IS = -1.7A, VGS = 0V Reverse Recovery Time (Note 14) tRR — 43 — ns IS = -1.7A, di/dt = 100A/µs Reverse Recovery Charge (Note 14) QRR — 77 — nC Gate Resistance Gate Resistance RG 0 — 100 Ω VDS = 0V, VGS = 0V, f = 1.0MHz Notes: 12. Measured under pulsed conditions. Pulse width 300µs; duty cycle 2%. 13. Switching characteristics are independent of operating junction temperature. 14. For design aid only, not subject to production testing.
Document number: DS33497 Rev. 4 - 3 8 of 11 www.diodes.com January 2024 © 2024 Copyright Diodes Incorporated. All Rights Reserved. ZXMC10A816N8 Typical Characteristics Q2 P-Channel 0.1 1 10 0.1 0.1 1 100.01 0.1 -50 0 50 100 150 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.1 1 100.1 0.01 0.1 10V 3.5V -VGS 4.5V Output Characteristics T = 25 o C -VGS -ID Drain Current (A) -VDS Drain-Source Voltage (V) 4.5V 10V 3.5V Output Characteristics T = 150 o C -ID Drain Current (A) -VDS Drain-Source Voltage (V) Typical Transfer Characteristics -VDS = 10V T = 25 o C T = 150 o C -ID Drain Current (A) -VGS Gate-Source Voltage (V) Normalised Curves v Temperature RDS(ON) VGS = -10V ID = - 2.1A VGS(TH) VGS = VDS ID = -250A Normalised RDS(ON) and VGS(TH) TJ Junction Temperature ( o 10V 3.5V 4.5V On-Resistance v Drain Current T = 25 o C-VGS RDS(ON) Drain-Source On-Resistance -ID Drain Current (A) T = 150 o C T = 25 o C Source-Drain Diode Forward Voltage -VSD Source-Drain Voltage (V) -ISD Reverse Drain Current (A)
Document number: DS33497 Rev. 4 - 3 9 of 11 www.diodes.com January 2024 © 2024 Copyright Diodes Incorporated. All Rights Reserved. ZXMC10A816N8 Typical Characteristics Q2 P-Channel (continued) 0.1 1 10 1000 200 400 600 800 1000 Crss Coss Ciss VGS = 0V f = 1MHz C Capacitance (pF) -VDS - Drain - Source Voltage (V) 0 2 4 6 8 10 12 14 16 180 ID = -2.1A VDS = -50V Gate-Source Voltage v Gate ChargeCapacitance v Drain-Source Voltage Q - Charge (nC) -VGS Gate-Source Voltage (V) Test Circuits
Document number: DS33497 Rev. 4 - 3 10 of 11 www.diodes.com January 2024 © 2024 Copyright Diodes Incorporated. All Rights Reserved. ZXMC10A816N8 Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SO-8 b e E A 9° (All sides) 4°± 3° c Q h 45° R 0.1 D L Seating Plane Gauge Plane Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SO-8 C X Y SO-8 Dim Min Max Typ A 1.40 1.50 1.45 A1 0.10 0.20 0.15 b 0.30 0.50 0.40 c 0.15 0.25 0.20 D 4.85 4.95 4.90 E 5.90 6.10 6.00 E1 3.80 3.90 3.85 E0 3.85 3.95 3.90 e -- -- 1.27 h - -- 0.35 L 0.62 0.82 0.72 Q 0.60 0.70 0.65 All Dimensions in mm Dimensions Value (in mm) C 1.27 X 0.802 X1 4.612 Y 1.505 Y1 6.50
Document number: DS33497 Rev. 4 - 3 11 of 11 www.diodes.com January 2024 © 2024 Copyright Diodes Incorporated. All Rights Reserved. ZXMC10A816N8 IMPORTANT NOTICE 1. DIODES INCORPORATED (Diodes) AND ITS SUBSIDIARIES MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON -INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes’ products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes’ products. 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