ZXM66P02N8 DIODES | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 5

Technical content

Document Number DS31965 Rev. 2 - 2 1 of 5 www.diodes.com October 2009 © Diodes Incorporated A Product Line of Diodes Incorporated ZXM66P02N8 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS RDS(on) ID -20V 0.025Ω -8.0A Description and Applications This high density MOSFET utilizes a unique structure that combines the benefits of a low on-resistance with fast switching speed. This makes it ideal for high efficiency, low voltage power management applications. Compared to trenchFET technology, this MOSFET structure has an intrinsically higher pulse current handling capability in linear mode.

  • Inrush protection circuits
  • DC-DC Converters
  • Power management functions
  • Disconnect switches
  • Motor control Features and Benefits
  • High pulse current handling in linear mode
  • Low on-resistance
  • Fast switching speed
  • Low gate drive
  • Low profile SOIC package Mechanical Data
  • Case: SO-8
  • Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminals Connections: See diagram below
  • Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208
  • Weight: 0.074 grams (approximate) Ordering Information (Note 1) Product Marking Reel size (inches) Tape width (mm) Quantity per reel ZXM66P02N8TA See below 7 12 500 Notes: 1. For packaging deta ils, go to our website. Marking Information Top View Equivalent Circuit ZXM = Product Type Marking Code, Line 1 66P02 = Product Type Marking Code, Line 2 YYWW = Date Code Marking YY = Year (ex: 09 = 2009) WW = Week (01-52) ZXM 66P02 YYWW Top View SO-8 D S G

Document Number DS31965 Rev. 2 - 2 2 of 5 www.diodes.com October 2009 © Diodes Incorporated A Product Line of Diodes Incorporated ZXM66P02N8 Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Drain-Source voltage VDSS -20 V Gate-Source voltage VGS ±12 V Continuous Drain current VGS = 4.5V (Note 3) ID -8.0 A TA = 70°C (Note 3) -6.5 (Note 2) -6.4 Pulsed Drain current (Note 4) IDM -28 A Continuous Source current (Body diode) (Note 3) IS -4.15 A Pulsed Source current (Body diode) (Note 4) ISM -28 A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Power dissipation Linear derating factor (Note 2) PD 1.56 12.5 W mW/°C (Note 3) 2.5 Thermal Resistance, Junction to Ambient (Note 2) RθJA 80 °C/W (Note 3) 50 Operating and storage temperature range TJ, TSTG -55 to 150 °C Notes: 2. For a device surface mounted on 25 mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. 3. Same as note (3), except the device is measured at t ≤ 10 sec. 4. Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10μs – pulse width limited by maximum junction temperature. Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS -20 ⎯ ⎯ V ID = -250μA, VGS = 0V Zero Gate Voltage Drain Current IDSS ⎯ ⎯ -1 μA VDS = -16V, VGS = 0V Gate-Source Leakage IGSS ⎯ ⎯ -100 nA VGS = ±12V, VDS = 0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) -0.7 ⎯ ⎯ V ID = -250μA, VDS = VGS Static Drain-Source On-Resistance (Note 5) RDS (ON) ⎯ ⎯ 0.025 Ω VGS = -4.5V, ID = -3.2A Forward Transconductance (Notes 5 & 6) gfs ⎯ 13.3 ⎯ S VDS = -10V, ID = -3.2A Diode Forward Voltage (Note 5) VSD ⎯ ⎯ 0.95 V IS = -3.2A, VGS = 0V Reverse recovery time (Note 6) trr 23.1 ⎯ ns IF = -3.2A, di/dt = 100A/μs Reverse recovery charge (Note 6) Qrr ⎯ 12.2 ⎯ nC DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance Ciss ⎯ 2068 ⎯ pF VDS = -15V, VGS = 0V F = 1MHz Output Capacitance Coss ⎯ 1038 ⎯ pF Reverse Transfer Capacitance Crss ⎯ 506 ⎯ pF Total Gate Charge (Note 7) Qg ⎯ 43.3 ⎯ nC VGS = -4.5V, VDS = -10V, ID = -3.2A Gate-Source Charge (Note 7) Qgs ⎯ 3.5 ⎯ nC Gate-Drain Charge (Note 7) Qgd ⎯ 21.3 ⎯ nC Turn-On Delay Time (Note 7) tD(on) ⎯ 14.0 ⎯ ns VDD = -10V, VGS = -5V ID = -3.2A, RG = 6.0Ω Turn-On Rise Time (Note 7) tr ⎯ 44.3 ⎯ ns Turn-Off Delay Time (Note 7) tD(off) ⎯ 118.4 ⎯ ns Turn-Off Fall Time (Note 7) tf ⎯ 98.4 ⎯ ns Notes: 5. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2% 6. For design aid only, not subject to production testing. 7. Switching characteristics are independent of operating junction temperatures.

Document Number DS31965 Rev. 2 - 2 3 of 5 www.diodes.com October 2009 © Diodes Incorporated A Product Line of Diodes Incorporated ZXM66P02N8 Typical Characteristics 0.1 1 0.1 0.1 1 10 0.01 0.1 500.0m 1.0 1.5 2.0 1E-3 0.01 0.1 -50 0 50 100 150 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1 10 0.01 0.1 1E-3 0.01 0.1 10V 1.5V -VGS 4.5V 2.5V Output Characteristics T = 25°C -VGS -ID Drain Current (A) -VDS Drain-Source Voltage (V) 2.5V4.5V 10V 1.5V Output Characteristics T = 150°C -ID Drain Current (A) -VDS Drain-Source Voltage (V) Typical Transfer Characteristics -VDS = 10V T = 25°C T = 150°C -ID Drain Current (A) -VGS Gate-Source Voltage (V) Normalised Curves v Temperature RDS(on) VGS = -4.5V ID = - 3.2A VGS(th) VGS = VDS ID = -250uA Normalised RDS(on) and VGS(th) Tj Junction Temperature (°C) 10V 2.5V 1.5V 4.5V On-Resistance v Drain Current T = 25°C-VGS RDS(on) Drain-Source On-Resistance (Ω) -ID Drain Current (A) T = 150°C T = 25°C Source-Drain Diode Forward Voltage -VSD Source-Drain Voltage (V) -ISD Reverse Drain Current (A)

Document Number DS31965 Rev. 2 - 2 4 of 5 www.diodes.com October 2009 © Diodes Incorporated A Product Line of Diodes Incorporated ZXM66P02N8 Package Outline Dimensions θ DIM Inches Millimeters DIM Inches Millimeters H 0.228 0.244 5.80 6.20 θ 0° 8° 0° 8° Suggested Pad Layout 1.52 0.060 7.0 0.275 0.6 0.024 1.27 0.050 4.0 0.155 mm inches

Document Number DS31965 Rev. 2 - 2 5 of 5 www.diodes.com October 2009 © Diodes Incorporated A Product Line of Diodes Incorporated ZXM66P02N8 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries rese rve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability ari sing out of the application or use of this document or any product described herein; neither does Diodes Inco rporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability what soever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes In corporated products for any unintended or unauthorized application, Customers shall i ndemnify and hold Diodes Incorporated and its representatives harmless agains t all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or system s are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when prop erly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporate d and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2009, Diodes Incorporated www.diodes.com