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LM2655 2.5A High Efficiency Synchronous Switching Regulator Literature Number: SNVS072C
2.5A High Efficiency Synchronous Switching Regulator General Description The LM2655 is a current-mode controlled PWM step-down switching regulator. It has the unique ability to operate in synchronous or asynchronous mode. This gives the de- signer flexibility to choose between the high efficiency of synchronous operation, or the low solution cost of asynchro- nous operation. Along with flexibility, the LM2655 offers high power density with the small footprint of a TSSOP-16 pack- age. High efficiency ( >90%) is obtained through the use of an internal low ON-resistance (33mΩ) MOSFET, and an exter- nal N-Channel MOSFET. This feature, together with its low quiescent current, makes the LM2655 an ideal fit in portable applications. Integrated in the LM2655 are all the power, control, and drive functions for asynchronous operation. In addition, a low-side driver output allows easy synchronous operation. The IC uses patented current sensing circuitry that eliminates the external current sensing resistor required by other current- mode DC-DC converters. A programmable soft-start feature limits start up current surges and provides a means of se- quencing multiple power supplies.
Features
n Ultra-high efficiency up to 96% n 4V to 14V input voltage range n Internal high-side MOSFET with low RDS(ON) = 0.033Ω n 300 kHz fixed frequency internal oscillator n Low-side drive for synchronous operation n Guaranteed less than 12 µA shutdown current n Patented current sensing for current mode control n Programmable soft-start n Input undervoltage lockout n Output overvoltage shutdown protection n Output undervoltage shutdown protection n Thermal Shutdown n 16-pin TSSOP package
Applications
LM2655 2.5A High Efficiency Synchronous Switching Regulator © 2005 National Semiconductor Corporation DS101284 www.national.com
16-Lead TSSOP (MTC) 10128403 Top View Order Number LM2655MTC-ADJ See NS Package Number MTC16 Block Diagram 10128404 LM2655 www.national.com 2
1-2 SW Switched-node connection, which is connected to the source of the internal high-side MOSFET. 3-5 PV IN Main power supply input pin. Connected to the drain of the internal high-side MOSFET. 6V CB Bootstrap capacitor connection for high-side gate drive. 7A V IN Input voltage for control and drive circuits. 8 SD(SS) Shutdown and Soft-start control pin. Pulling this pin below 0.3V shuts off the regulator. A capacitor connected from this pin to ground provides a control ramp of the input current. Do not drive this pin with an external source or erroneous operation may result. 9 FB Output voltage feedback input. Connected to the output voltage. 10 COMP Compensation network connection. Connected to the output of the voltage error amplifier. 11 L DELAY A capacitor between this pin to ground sets the delay from when the output voltage reaches 80% of its nominal to when the undervoltage latch protection is enabled. 12 LDR Low-side FET gate drive pin. 13 GND Power ground. 14-16 PV IN Main power supply input pin. Connected to the drain of the internal high-side MOSFET.
Ordering Information
Supplied as 3000 units, Tape and Reel LM2655MTC-3.3 LM2655MTCX-3.3 LM2655MTC-ADJ LM2655MTCX-ADJ LM2655 www.national.com3
Absolute Maximum Ratings(Note 1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Supply Voltage (PV IN) 3.8V ≤ VIN ≤ 14V Supply Voltage (AVIN) 4.0V ≤ VIN ≤ 14V Feedback Pin Voltage -0.4V ≤ VFB ≤ 5V VCB Voltage, (Note 7) 7V CSS Voltage 2.5V Comp Voltage 2.5V L DELAY Voltage 2.5V LDR Voltage 5V V SW, (Note 8) 14V Power Dissipation (TA =25˚C), (Note 2) Power Dissapation 893mW Lead Temperature Vapor Phase (60 sec.) 215˚C Infrared (15 sec.) 220˚C ESD Susceptibility(Note 3) Human Body Model(Note 4) 1kV Machine Model 200V Operating Ratings(Note 1) Storage Temperature Range −65˚C ≤ TJ ≤ +150˚C Junction Temperature Range −40˚C ≤ TJ ≤ +125˚C LM2655-3.3 Electrical Characteristics Specifications with standard typeface are for TJ = 25˚C, and those inboldface typeapply over fullOperating Temperature Range.V IN = 10V unless otherwise specified. Symbol Parameter Conditions Typical (Note 5) Limit (Note 6) Units VOUT Output Voltage I LOAD = 1.5 A 3.3 3.235/3.185 3.392/3.416 V V(min) V(max) VOUT Output Voltage Line Regulation VIN =5 Vt o1 4 V ILOAD = 1.5 A 0.5 0.7 %(max) Output Voltage Load Regulation ILOAD = 100 mA to 2.5A VIN =10V 0.6 1.7 %(max) VINUV VIN Undervoltage Lockout Threshold Voltage Rising Edge 3.8 3.95 V V(max) VUV_HYST Hysteresis for the Input Undervoltage Lockout 210 mV ICL(Note 9) Average Output Current Limit VIN =5 V VOUT = 3.3V 3.3 Specifications with standard typeface are for TJ = 25˚C, and those inboldface typeapply over fullOperating Temperature Range.V IN = 10V unless otherwise specified. Symbol Parameter Conditions Typical (Note 5) Limit (Note 6) Units VFB Feedback Voltage I LOAD = 1.5 A 1.238 1.208/1.181 1.260/1.267 V V(min) V(max) VOUT Output Voltage Line Regulation VIN =5 Vt o1 4 V ILOAD = 1.5 A 0.5 0.7 %(max) Output Voltage Load Regulation ILOAD = 100 mA to 2.5A VIN =10V 0.6 1.7 %(max) VINUV VIN Undervoltage Lockout Threshold Voltage Rising Edge 3.8 3.95 V V(max) VUV_HYST Hysteresis for the Input Undervoltage Lockout 210 mV ICL(Note 9) Average Output Current Limit VIN =5 V VOUT = 3.3V 3.3 A LM2655 www.national.com 4
All Output Voltage Versions Electrical Characteristics Specifications with standard typeface are for TJ = 25˚C, and those inboldface typeapply over fullOperating Temperature Range.V IN = 10V unless otherwise specified. Symbol Parameter Conditions Typical (Note 6) Limit (Note 5) Units IQ Quiescent Current Shutdown Pin Floating (Device On) Device Not Switching 1.7 mA mA(max) I QSD Quiescent Current in Shutdown Mode Shutdown Pin Pulled Low 7 µA µA(max) RDS(ON) Switch ON Resistance I SWITCH = 1.5A 33 mΩ mΩ(max) RSW(ON) Switch On Resistance (MOSFET ON Resistance + Bonding Wire Resistance) I SWITCH = 1.5A 72 m Ω IL Switch Leakage Current 5 nA VBOOT Bootstrap Regulator Voltage I BOOT =1m A CBOOT=tbd 6.7 6.4 7.0 V V(min) V(max) G M Error Amplifier Transconductance 1250 µmho AV Error Amplifier Voltage Gain 100 IEA_SOURCE Error Amplifier Source Current VIN = 4V, VFB = .9*VOUT,V COMP =2 V µA µA(min) IEA_SINK Error Amplifier Sink Current V IN = 4V, VFB = 1.1*VOUT,V COMP =2 V µA µA(min) VEAH Error Amplifier Output Swing Upper Limit VIN = 4V, VFB = .9*VOUT,V COMP =2 V 2.70 2.50/2.40 V V(min) VEAL Error Amplifier Output Swing Lower Limit VIN = 4V, VFB = .9*VOUT,V COMP =2 V 1.25 1.35/1.50 V V(max) FOSC Oscillator Frequency Measured at Switch Pin VIN =4 V 300 kHz kHz(min) kHz(max) DMAX Maximum Duty Cycle V IN =4 V 9 5 %(min) ISS Soft-Start Current Voltage at the SS Pin = 1.4V 11 µA µA(max) VOUTUV VOUT Undervoltage Lockout Threshold Voltage OUT %VOUT(min) %VOUT(max) Hysteresis for VOUTUV 5% V OUT VOUTOV VOUT Overvoltage Lockout Threshold Voltage 108 106 114 OUT %VOUT(min) %VOUT(max) Hysteresis for VOUTOV 5% V OUT ILDELAY__ SOURCE LDELAY Pin Source Current 5 µA ISHUTDOWN Shutdown Pin Current Shutdown Pin Pulled Low 2.2 3.7/4.0 µA µA(max) VSHUTDOWN Shutdown Pin Threshold Voltage Rising Edge 0.6 0.25 0.9 V V(min) V(max) TSD Thermal Shutdown Temperature 165 ˚C LM2655 www.national.com5
All Output Voltage Versions Electrical Characteristics(Continued) Specifications with standard typeface are for TJ = 25˚C, and those inboldface typeapply over fullOperating Temperature Range.V IN = 10V unless otherwise specified. Symbol Parameter Conditions Typical (Note 6) Limit (Note 5) Units TSD_HYST Thermal Shutdown Hysteresis Temperature 25 ˚C Low-side Driver (LDR) Parameters Specifications with standard typeface are for TJ = 25˚C, and those inboldface typeapply over fullOperating Temperature Range.V IN = 10V unless otherwise specified. Symbol Parameter Conditions Typical (Note 5) Limit (Note 6) Units VOH Logic High Level V IN = 10V 6.8 6.6 V V(min) VIN = 6.0V 6 5.8 V V(min) VOL Logic Low Level 0 0.05 V V(max) ISINK LDR Sink Current LDR Voltage = 1V 500 mA ISOURCE LDR Source Current LDR Voltage = 2V 180 mA TRR Rise Time C GS=1000pF 18 ns TF Fall Time C GS=1000pF 7 ns Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is intended to be functional, but device parameter specifications may not be guaranteed under these conditions. For guaranteed specifications and test conditions, see the Electrical Characteristics. Note 2: The maximum allowable power dissipation is calculated by using PDMAX =( TJMAX −T A)/θJA, where TJMAX is the maximum junction temperature, TA is the ambient temperature, and θJA is the junction-to-ambient thermal resistance of the specified package. The 893 mW rating results from using 150˚C, 25˚C, and 140˚C/W for TJMAX,T A, andθJA respectively. AθJA of 140˚C/W represents the worst-case condition of no heat sinking of the 16-pin TSSOP package. Heat sinking allows the safe dissipation of more power. The Absolute Maximum power dissipation must be derated by 7.14 mW per ˚C above 25˚C ambient. The LM2655 actively limits its junction temperatures to about 165˚C. Note 3: The human body model is a 100 pF capacitor discharged through a 1.5 kΩ resistor into each pin. The machine model is a 200pF capacitor discharged directly into each pin. Note 4: ESD susceptibility using the human body model is 500V for VCB,V SW, LDR, and LDELAY. Note 5: Typical numbers are at 25˚C and represent the most likely norm. Note 6: All limits guaranteed at room temperature (standard typeface) and attemperature extremes (bold typeface). All room temperature limits are 100% production tested. All limits attemperature extremesare guaranteed via correlation using standard Statistical Quality Control (SQC) methods. All limits are used to calculate Average Outgoing Quality Level (AOQL). Note 7: Measured with respect to VSW. Note 8: Measured while switching in closed loop with Vin = 15V. Note 9: Average output current limit obtained using typical application circuit. This figure is dependant on the the inductor used. Note 10: Bond wire resistance accounts for approximately 40mΩ of RSW(ON). LM2655 www.national.com 6
Typical Performance Characteristics Efficiency vs Load Current (VIN = 5V, VOUT = 3.3V) Efficiency vs VIN (ILOAD = 0.5A) (Synchronous) 10128405 10128406 lQ vs VIN IQSD vs VIN 10128407 10128408 IQSD vs Junction Temperature Frequency vs Junction Temperature 10128409 10128410 LM2655 www.national.com7
Typical Performance Characteristics (Continued) RSW(ON) + Bond Wire Resistance vs Input Voltage(Note 10) (ILOAD = 1.5A) RSW(ON) + Bond Wire Resistance vs Junction Temperature(Note 10) (ILOAD = 1.5A, VIN =5 V) 10128411 10128412 Current Limit vs Input Voltage (Synchronous) Current Limit vs Input Voltage (Asynchronous) 10128413 10128414 Current Limit vs Junction Temperature (VIN = 5V, VOUT = 3.3V) Reference Voltage vs Junction Temperature 10128415 10128416 LM2655 www.national.com 8
The LM2655 is a constant frequency (300kHz), current- mode PWM switcher that can be operated synchronously or asynchronously. SYNCHRONOUS OPERATION A converter is said to be in synchronous operation when a MOSFET is used in place of the catch diode. In the case of the buck converter, this MOSFET is known as the low-side MOSFET (the MOSFET connected between the input source and the low-side MOSFET is the high-side MOS- FET). Converters in synchronous operation exhibit higher efficiencies compared to asynchronous operation because the I 2R losses are reduced with the use of a MOSFET . Operation of the LM2655 in synchronous mode is identical to its operation in asynchronous mode, except that internal logic drives the low-side MOSFET. At the beginning of a switching cycle, the high-side MOSFET is on and current from the input source flows through the inductor and to the load. The current from the high-side MOSFET is sensed and compared with the output of the error amplifier (COMP pin). When the sensed current reaches the COMP pin voltage level, the high-side switch is turned off. After a 30ns delay (deadtime), the low-side driver goes high and turns the low-side MOSFET on. The current now flows through the low-side MOSFET, through the inductor and on to the load. A 30ns delay is necessary to insure that the MOSFETs are never on at the same time. During the 30ns deadtime, the current is forced to flow through the low-side MOSFET’s body diode. It is recommended that a low forward drop schottky diode be placed in parallel to the low-side MOSFET so that current will be more efficiently conducted during this 30ns deadtime. This Schottky diode should be placed within 5mm of the switch pin so that current limit is not effected (see External Schottky Diode section). At the end of the switching cycle, the low-side switch is turned off and after another 30ns delay, the cycle is repeated. Current through the high-side MOSFET is sensed by pat- ented circuitry that does not require an external sense resis- tor. As a result, system cost and size are reduced, efficiency is increased, and noise immunity of the sensed current is improved. A feedforward from the input voltage is added to reduce the variation of the current limit over the input voltage range. ASYNCHRONOUS OPERATION A unique feature of the LM2655 is that it can be operated in either synchronous or asynchronous mode. When operating in asynchronous mode, a small amount of efficiency is sac- rificed for a less expensive solution. Any diode may be used, but it is recommended that a low forward drop schottky diode be use to maximize efficiency. When operating the LM2655 in asynchronous mode, the LDR pin should be terminated with a large resistor ( >1 MegΩ), or left floating. Operation in asynchronous mode is similar to that of synchronous mode, except the internal low-side MOSFET logic is not used. At the beginning of a switching cycle, the high-side MOSFET is on and current from the input source flows through the inductor and to the load. The current from the high-side MOSFET is sensed and compared with the output of the error amplifier (COMP pin). When the sensed current reaches the COMP pin voltage level, the high-side switch is turned off. At this instant, the load current is commutated through the catch diode. The current now flows through the diode and the inductor and on to the load. At the end of the switching cycle, the high-side switch is turned on and the cycle is repeated. PROTECTIONS The peak current in the system is monitored by cycle-by- cycle current limit circuitry. This circuitry will turn the high- side MOSFET off whenever the current through the high- side MOSFET reaches a preset limit (see plots). A second level current limit is accomplished by the undervoltage pro- tection: if the load pulls the output voltage down below 80% of its nominal value, the undervoltage latch protection will wait for a period of time (set by the capacitor at the LDELAY pin, see LDELAY CAPACITOR section for more information). If the output voltage is still below 80% of its nominal after the waiting period, the latch protection will be enabled. In the latch protection mode, the low-side MOSFET is on and the high-side MOSFET is off. The latch protection will also be enabled immediately whenever the output voltage exceeds the overvoltage threshold (110% of its nominal). Both pro- tections are disabled during start-up.(See SOFT-START CA- PACITOR section and LDELAY CAPACITOR section for more information.) Toggling the input supply voltage or the shutdown pin can reset the device from the latched protec- tion mode. Design Procedure This section presents guidelines for selecting external com- ponents. INPUT CAPACITOR A low ESR aluminum, tantalum, ceramic, or any other type of capacitor is needed between the input pin and power ground. This capacitor prevents large voltage transients from appearing at the input. The capacitor is selected based on the RMS current and voltage requirements. The RMS cur- rent is given by: The RMS current reaches its maximum (I OUT/2) when VIN equals 2VOUT. For an aluminum or ceramic capacitor, the voltage rating should be at least 25% higher than the maximum input voltage. If a tantalum capacitor is used, the voltage rating required is about twice the maximum input voltage. The tantalum capacitor should be surge current tested by the manufacturer to prevent damage by the inrush current. It is also recommended to put a small ceramic capacitor (0.1 µF) between the input pin and ground pin to reduce high frequency noise. INDUCTOR The most critical parameters for the inductor are the induc- tance, peak current and the DC resistance. The inductance is related to the peak-to-peak inductor ripple current, the input and the output voltages: A higher value of ripple current reduces inductance, but increases the conductance loss, core loss, current stress for the inductor and switch devices. It also requires a bigger output capacitor for the same output voltage ripple require- LM2655 www.national.com9
inductor copper loss equal 2% of the output power. is preferred for low temperature applications. TABLE 1. MOSFET Manufacturers should be given to the selection of the low-side MOSFET. driver of the LM2655, but CIN is fixed by the MOSFET. FIGURE 1. Low-side/high-side driver timing diagram.
increasing input voltage and load current. operated in syncronous mode using a low-side MOSFET. higher than the full load current. cal voltage across the boost capacitor is 6.7V. A soft-start capacitor is used to provide the soft-start feature. eventually charged up to about 2V. voltage and overvoltage protections are enabled. 2V, undervoltage latch protection will remain disabled. FIGURE 2. Undervoltage latch protection.
Some applications require output voltages less than 1.25V.
- Minimize the parasitic inductance in the loop of input
may result in noise problems.
- Minimize the trace from the center of the output resistor
to connect the top of the resistor divider to the output.
- If the Schottky diode D is used, minimize the traces
- If the low-side MOSFET is used, minimize the trace
FIGURE 5. Obtaining output voltages of less than 1.25V
Schematic for the Typical Board Layout Typical PC Board Layout: (2X Size) 10128426 Component Placement Guide 10128427 Component Side PC Board Layout LM2655 www.national.com 14
Typical PC Board Layout: (2X Size)(Continued) 10128428 Solder Side PC Board Layout LM2655 www.national.com15
Physical Dimensions inches (millimeters) unless otherwise noted 16-Lead TSSOP (MTC) Order Number LM2655MTC-ADJ LM2655MTCX-ADJ LM2655MTC-3.3 LM2655MTCX-3.3 See Ordering Information Table For Order Quantities National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications. For the most current product information visit us at www.national.com. LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT AND GENERAL COUNSEL OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. BANNED SUBSTANCE COMPLIANCE National Semiconductor manufactures products and uses packing materials that meet the provisions of the Customer Products Stewardship Specification (CSP-9-111C2) and the Banned Substances and Materials of Interest Specification (CSP-9-111S2) and contain no ‘‘Banned Substances’’ as defined in CSP-9-111S2. National Semiconductor Americas Customer Support Center Email: new.feedback@nsc.com Tel: 1-800-272-9959 National Semiconductor Europe Customer Support Center Fax: +49 (0) 180-530 85 86 Email: europe.support@nsc.com Deutsch Tel: +49 (0) 69 9508 6208 English Tel: +44 (0) 870 24 0 2171 Français Tel: +33 (0) 1 41 91 8790 National Semiconductor Asia Pacific Customer Support Center Email: ap.support@nsc.com National Semiconductor Japan Customer Support Center Fax: 81-3-5639-7507 Email: jpn.feedback@nsc.com Tel: 81-3-5639-7560 www.national.com LM2655 2.5A High Efficiency Synchronous Switching Regulator
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