ZXM64N035L3 35V N-channel enhancement mode MOSFET datasheet

Document overview

  • Manufacturer or author: Diodes Incorporated
  • PDF pages: 4

Technical content

V(BR)DSS = 35V: RDS(on) = 0.060 : ID = 13A

DESCRIPTION

This new generation of high cell density planar MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.

FEATURES

/c183Low on-resistance /c183Fast switching speed /c183Low threshold /c183Low gate drive /c183TO220 package

APPLICATIONS

/c183100W Class D Audio Output Stage /c183Motor Control DEVICE MARKING /c183ZXM6 4N035 ZXM64N035L3 ISSUE 1 - JUNE 2004 35V N-CHANNEL ENHANCEMENT MODE MOSFET DEVICE MULTIPLES ZXM64N035L3 1000

ORDERING INFORMATION

PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DSS 35 V Gate-Source Voltage V GS /H1100620 V Continuous Drain Current (V GS=10V; T C=25°C)(a) (VGS=10V; T A=25°C)(b) ID 13 3.5 A Pulsed Drain Current (b) IDM 30 A Continuous Source Current (Body Diode) (b) IS 2.4 A Pulsed Source Current (Body Diode) (b) ISM 30 A Power Dissipation at T A=25°C (a) Linear Derating Factor PD 20 160 W mW/°C Power Dissipation at T A=25°C (b) Linear Derating Factor PD 1.5 W mW/°C Operating and Storage Temperature Range T j:Tstg -55 to +150 °C ABSOLUTE MAXIMUM RATING PARAMETER SYMBOL VALUE UNIT Junction to Case (a) RθJC 6.25 °C/W Junction to Ambient (b) RθJA 83.3 °C/W THERMAL RESISTANCE

PARAMETER SYMBOL MIN . TYP . MAX . UNIT CONDITIONS STATIC Drain-Source Breakdown Voltage V (BR)DSS 35 V I D=250 /H9262A, V GS=0V Zero Gate Voltage Drain Current I DSS 1 /H9262AV DS=35V, V GS=0V Gate-Body Leakage I GSS 100 nA V GS=/H1100620V, V DS=0V Gate-Source Threshold Voltage V GS(th) 1.0 V I D=250 /H9262A, V DS=V GS Static Drain-Source On-State Resistance (1) RDS(on) 0.060 0.070 /H9024 /H9024 VGS=10V, I D=3.7A VGS=4.5V, I D=1.9A Forward Transconductance (1)(3) gfs 4.3 S V DS=10V,I D=1.9A DYNAMIC (3) Input Capacitance C iss 950 pF VDS=25V, V GS=0V, f=1MHzOutput Capacitance C oss 200 pF Reverse Transfer Capacitance C rss 50 pF SWITCHING (2) (3) Turn-On Delay Time t d(on) 4.2 ns VDD =15V, I D=3.7A RG=6.0 /H9024, VGS=10V Rise Time t r 4.5 ns Turn-Off Delay Time t d(off) 20.5 ns Fall Time t f 8n s Total Gate Charge Q g 27 nC VDS=24V,V GS=10V, ID=3.7AGate-Source Charge Q gs 5n C Gate-Drain Charge Q gd 4.5 nC SOURCE-DRAIN DIODE Diode Forward Voltage (1) VSD 0.95 V T J=25 /H11034C, I S=3.7A, VGS=0V Reverse Recovery Time (3) trr 24.5 ns T J=25 /H11034C, I F=3.7A, di/dt= 100A/ /H9262s Reverse Recovery Charge (3) Qrr 19.1 nC ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated) NOTES (1) Measured under pulsed conditions. Width=300/H9262s. Duty cycle /H113492% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing.

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Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex plc Lansdowne Road, Chadderton Oldham, OL9 9TY United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com © Zetex Semiconductors plc 2004 Package Outline DIM Millimeters Inches Min Max Min Max A 3.56 4.82 0.140 0.189 b 0.38 1.01 0.015 0.040 b1 1.15 1.77 0.045 0.070 c1 0.41 0.50 0.016 0.020 D 14.23 16.51 0.560 0.650 E 9.66 10.66 0.380 0.419 e 2.29 2.79 0.090 0.110 e1 4.83 5.33 0.190 0.210 F 0.51 1.39 0.20 0.055 H1 5.58 6.85 0.230 0.270 J1 2.04 2.92 0.080 0.115 L 12.70 14.73 0.500 0.580 L1 /H50076.35 /H50070.250 /H11083P 3.54 4.08 0.139 0.160 Q 2.54 3.42 0.100 0.134 Package Dimensions