ZXM62P03E6
Document overview
- Manufacturer or author: Diodes Incorporated
- PDF pages: 7
Technical content
Document Number: DS33483 Rev. 3 - 2 1 of 7 www.diodes.com March 2015 © Diodes Incorporated ZXM62P03E6 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS RDS(on) ID TA = +25°C -30V 0.15Ω @ VGS = -10V -2.6A
Description
This MOSFET utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed, making it ideal for high-efficiency power management applications.
Applications
DC-DC Converters Power Management Functions Disconnect Switches Motor Control Features and Benefits Fast Switching Speed Low On-Resistance Low Threshold Low Gate Drive Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Case: SOT-26 Case Material: Molded Plastic; UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish; Solderable per MIL-STD-202, Method 208 Weight: 0.015 grams (Approximate) Ordering Information (Note 4) Product Marking Reel size (inches) Tape width (mm) Quantity per reel ZXM62P03E6TA 2P03 7 8 3,000 Units ZXM62P03E6TC 2P03 13 8 10,000 Units Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Hal ogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. Marking Information Date Code Key Year 2015 2016 2017 2018 2019 2020 2021 2022 Code C D E F G H I J Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Equivalent Circuit D S G Pin Out - Top View SOT-26 Top View 2P03 = Product Type Marking Code YM = Date Code Marking Y or Y ̅ = Year (ex: C = 2015) M or M = Month (ex: 9 = September) 2P03 Y M SOT-26
Document Number: DS33483 Rev. 3 - 2 2 of 7 www.diodes.com March 2015 © Diodes Incorporated ZXM62P03E6 Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current VGS = -4.5V TA = +25°C (Note 5) TA = +70°C (Note 5) ID -1.5 -1.2 A Pulsed Drain Current (Note 7) IDM -7.4 A Continuous Source Current (Body Diode) IS -0.54 A Pulsed Source Current (Body Diode) ISM -7.4 A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Power Dissipation (Note 5) Linear Derating Factor PD 625 mW mW/°C Power Dissipation (Note 6) Linear Derating Factor PD 806 6.4 mW mW/°C Thermal Resistance, Junction to Ambient (Note 5) RθJA 113 °C/W Thermal Resistance, Junction to Ambient (Note 6) RθJA 73 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions 6. For a device surface mounted on FR4 PCB measured at t ≤5 sec onds. 7. Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS -30 V ID = -250μA, VGS = 0V Zero Gate Voltage Drain Current IDSS -1 μA VDS = -30V, VGS = 0V Gate-Source Leakage IGSS ±100 nA VGS = 20V, VDS = 0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) -1 V ID = -250μA, VDS = VGS Static Drain-Source On-Resistance (Note 8) RDS (ON) 0.15 Ω VGS = -10V, ID = -1.6A 0.23 VGS = -4.5V, ID = -0.8A Forward Transconductance (Notes 8 & 10) gfs 1.1 S VDS = -10V, ID = -0.8A Diode Forward Voltage (Note 8) VSD -0.95 V TJ = +25°C, IS = -1.6A, VGS = 0V Reverse Recovery Time (Note 10) trr 19.9 ns TJ = +25°C, IF = -1.6A, di/dt = 100A/μs Reverse Recovery Charge (Note 10) Qrr 13 nC DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Ciss 330 pF VDS = -25V, VGS = 0V f = 1.0MHz Output Capacitance Coss 120 Reverse Transfer Capacitance Crss 45 Turn-On Delay Time (Note 9) td(on) 2.8 ns VDD = -15V, ID = -1.6A, Turn-On Rise Time (Note 9) tr 6.4 Turn-Off Delay Time (Note 9) td(off) 13.9 Turn-Off Fall Time (Note 9) tf 10.3 Total Gate Charge (Note 9) Qg 10.2 nC VDS = -24V, VGS = -10V, ID = -1.6A Gate-Source Charge (Note 9) Qgs 1.5 Gate-Drain Charge (Note 9) Qgd 3 Notes: 8. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤ 2%. 9. Switching characteristics are independent of operating junction temperature. 10. For design aid only, not subject to production testing.
Document Number: DS33483 Rev. 3 - 2 3 of 7 www.diodes.com March 2015 © Diodes Incorporated ZXM62P03E6 Typical Characteristics
Document Number: DS33483 Rev. 3 - 2 4 of 7 www.diodes.com March 2015 © Diodes Incorporated ZXM62P03E6 Typical Characteristics (cont.) Thermal Characteristics
Document Number: DS33483 Rev. 3 - 2 5 of 7 www.diodes.com March 2015 © Diodes Incorporated ZXM62P03E6 Test Circuits
Document Number: DS33483 Rev. 3 - 2 6 of 7 www.diodes.com March 2015 © Diodes Incorporated ZXM62P03E6 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. D e E1 E b A2 A1 Seating Plane L c a SOT26 Dim Min Max Typ A1 0.013 0.10 0.05 A2 1.00 1.30 1.10 A3 0.70 0.80 0.75 b 0.35 0.50 0.38 c 0.10 0.20 0.15 D 2.90 3.10 3.00 e - - 0.95 e1 - - 1.90 E 2.70 3.00 2.80 E1 1.50 1.70 1.60 L 0.35 0.55 0.40 a - - 8° a1 - - 7° All Dimensions in mm Dimensions Value (in mm) C 2.40 C1 0.95 G 1.60 X 0.55 Y 0.80 Y1 3.20 Y1 G X Y C
Document Number: DS33483 Rev. 3 - 2 7 of 7 www.diodes.com March 2015 © Diodes Incorporated ZXM62P03E6 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license unde r its patent or trademark rights, nor the rights of others. Any Customer or user of t his document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diod es Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application , Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product nam es and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety -critical, life support devices or systems, notwithstanding any devices - or systems -related information or support that may be provided by Diodes In corporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2015, Diodes Incorporated www.diodes.com