ZXM62N03E6 DIODES | Alldatasheet

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Technical content

V(BR)DSS=30V; RDS(ON)=0.11/H9024;ID=3.2A

DESCRIPTION

This new generation of high density MOSFETs from Zetex utilise a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.

FEATURES

  • Low on-resistance
  • Fast switching speed
  • Low threshold
  • Low gate drive
  • SOT23-6 package

APPLICATIONS

  • DC - DC converters
  • Power management functions
  • Disconnect switches
  • Motor control

ORDERING INFORMATION

(inches) TAPE WIDTH (mm) QUANTITY PER REEL ZXM62N03E6TA 7 8mm embossed 3000 units ZXM62N03E6TC 13 8mm embossed 10000 units DEVICE MARKING

  • 2N03 30V N-CHANNEL ENHANCEMENT MODE MOSFET SOT23-6 ZXM62N03E6 Top View Not Recommended for New Design Please Use ZXMN3A01E6TA

PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDSS 30 V Gate Source Voltage VGS /H1100620 V Continuous Drain Current (V GS =10V; T A=25°C)(b) (VGS =10V; T A=70°C)(b) ID 3.2 2.6 A Pulsed Drain Current (c) IDM 18 A Continuous Source Current (Body Diode) (b) I S 2.1 A Pulsed Source Current (Body Diode) ISM 18 A Power Dissipation at T A=25°C (a) Linear Derating Factor PD 1.1 8.8 W mW/°C Power Dissipation at T A=25°C (b) Linear Derating Factor PD 1.7 13.6 W mW/°C Operating and Storage Temperature Range T j:Tstg -55 to +150 °C THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) RθJA 113 °C/W Junction to Ambient (b) RθJA 73 °C/W NOTES: (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t/H110885 secs. (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. Not Recommended for New Design Please Use ZXMN3A01E6TA

Not Recommended for New Design Please Use ZXMN3A01E6TA

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. STATIC Drain-Source Breakdown Voltage V(BR)DSS 30 V ID=250µ A, V GS =0V Zero Gate Voltage Drain Current I DSS 1 µA VDS =30V, V GS =0V Gate-Body Leakage I GSS 100 nA VGS =⎛ 20V, V DS =0V Gate-Source Threshold Voltage V GS(th) 1.0 V ID=250µ A, V DS =V GS Static Drain-Source On-State Resistance (1) R DS(on) 0.11 0.15 Ω Ω VGS =10V, I D=2.2A VGS =4.5V, I D=1.1A Forward Transconductance gfs 1.1 S V DS =10V,I D=1.1A DYNAMIC (3) Input Capacitance C iss 380 pF VDS = 2 5V ,VGS =0V, f=1MHzOutput Capacitance Coss 90 pF Reverse Transfer Capacitance Crss 30 pF SWITCHING(2) (3) Turn-On Delay Time td(on) 2.9 ns VDD =15V, I D=2.2A RG=6.0Ω ,R D=6.7Ω (refer to test circuit) Rise Time tr 5.6 ns Turn-Off Delay Time td(off) 11.7 ns Fall Time tf 6.4 ns Total Gate Charge Qg 9.6 nC VDS =24V,V GS =10V, ID=2.2A (refer to test circuit) Gate-Source Charge Qgs 1.7 nC Gate Drain Charge Qgd 2.8 nC SOURCE-DRAIN DIODE Diode Forward Voltage (1) VSD 0.95 V T j=25°C, I S=2.2A, VGS =0V Reverse Recovery Time (3) trr 18.8 ns T j=25°C, I F=2.2A, di/dt= 100A/µ s Reverse Recovery Charge (3) Qrr 11.4 nC (1) Measured under pulsed conditions. Width=300µs. Duty cycle ®2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ZXM62N03E6 Not Recommended for New Design Please Use ZXMN3A01E6TA

Not Recommended for New Design Please Use ZXMN3A01E6TA

Not Recommended for New Design Please Use ZXMN3A01E6TA

Not Recommended for New Design Please Use ZXMN3A01E6TA

C E AA 2 D b e PAD LAYOUT DETAILS DIM Millimeters Inches Min Max Min Max A 0.90 1.45 0.35 0.057 A1 0.00 0.15 0 0.006 A2 0.90 1.30 0.035 0.051 b 0.35 0.50 0.014 0.019 C 0.09 0.20 0.0035 0.008 D 2.80 3.00 0.110 0.118 E 2.60 3.00 0.102 0.118 E1 1.50 1.75 0.059 0.069 ZXM62N03E6 Europe Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc

700 Veterans Memorial Hwy

Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex plc Lansdowne Road, Chadderton Oldham, OL9 9TY United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com © Zetex Semiconductors plc 2004 Not Recommended for New Design Please Use ZXMN3A01E6TA