ZXM61P02F
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- Manufacturer or author: Diodes Inc
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Document Number DS33478 Rev. 3 - 2 1 of 7 www.diodes.com October 2013 © Diodes Incorporated ZXM61P02F 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS RDS(on) ID TA = +25C -20V 600mΩ @ VGS = -4.5V -0.92A 900mΩ @ VGS = -2.7V -0.75A Description and Applications This MOSFET utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed, making it ideal for high-efficiency power management applications. DC - DC converters Power management functions Disconnect switches Motor control Features and Benefits Fast switching speed Low on-resistance Low threshold Low gate drive Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Case: SOT23 Case Material: Molded Plastic, UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish ; Solderable per MIL-STD-202, Method 208 Weight: 0.008 grams (approximate) Ordering Information (Note 4) Product Marking Reel size (inches) Tape width (mm) Quantity per reel ZXM61P02FTA P02 7 8 3000 Units Notes: 1. No purposely added lead. Fully EU Directiv e 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more in formation about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html Marking Information Top View Equivalent Circuit P02 = Product Type Marking Code D S G Top View Pin Out D S G SOT23 P02
Document Number DS33478 Rev. 3 - 2 2 of 7 www.diodes.com October 2013 © Diodes Incorporated ZXM61P02F Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGS ±12 V Continuous Drain Current VGS = 4.5V TA = +25°C (Note 6) TA = +70°C (Note 6) ID -0.9 -0.7 A Pulsed Drain Current (Note 7) IDM -4.9 A Continuous Source Current (Body Diode) (Note 6) IS -0.9 A Pulsed Source Current (Body Diode) (Note 7) ISM -4.9 A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Power Dissipation (Note 5) Linear Derating Factor P D 625 mW mW/°C Power Dissipation (Note 6) Linear Derating Factor PD 806 6.4 mW mW/°C Thermal Resistance, Junction to Ambient (Note 5) RθJA 200 °C/W Thermal Resistance, Junction to Ambient (Note 6) RθJA 155 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions 6. For a device surface mounted on FR4 PCB measured at t ≤ 5 secs. 7. Repetitive rating 25mm x 25 mm FR4 PCB, D=0.05 pulse width=10μs - pulse current limited by maximum junction temperature. Thermal Characteristics
Document Number DS33478 Rev. 3 - 2 3 of 7 www.diodes.com October 2013 © Diodes Incorporated ZXM61P02F Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS -20 V ID = -250μA, VGS = 0V Zero Gate Voltage Drain Current IDSS -0.1 μA VDS = -20V, VGS = 0V Gate-Source Leakage IGSS ±100 nA VGS = 12V, VDS = 0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) -0.7 -1.5 V ID = -250A, VDS = VGS Static Drain-Source On-Resistance (Note 8) RDS (ON) 0.6 Ω VGS = -4.5V, ID = -0.61A 0.9 VGS = -2.7V, ID = -0.31A Forward Transconductance (Notes 8 and 10) gfs 0.56 S VDS = -10V, ID = -0.31A Diode Forward Voltage (Note 8) VSD -0.95 V TJ = +25°C, IS = -0.61A, VGS = 0V Reverse Recovery Time (Note 10) trr 14.9 ns TJ = +25°C, IF = -0.61A, di/dt = 100A/μs Reverse Recovery Charge (Note 10) Qrr 5.6 nC DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Ciss 150 pF VDS = -15V, VGS = 0V f = 1.0MHz Output Capacitance Coss 70 Reverse Transfer Capacitance Crss 30 Turn-On Delay Time (Note 9) td(on) 2.9 ns VDD = -110V, ID = -0.93A, Turn-On Rise Time (Note 9) tr 6.7 Turn-Off Delay Time (Note 9) td(off) 11.2 Turn-Off Fall Time (Note 9) tf 10.1 Total Gate Charge (Note 9) Qg 3.5 nC VDS = -16V, VGS = -4.5V, ID = -0.61A Gate-Source Charge (Note 9) Qgs 0.5 Gate-Drain Charge (Note 9) Qgd 1.5 Notes: 8. Measured under pulsed conditions. Pulse width = 300 μs. Duty cycle ≤ 2%. 9. Switching characteristics are ind ependent of operating junction temperature. 10. For design aid only, not subject to production testing.
Document Number DS33478 Rev. 3 - 2 4 of 7 www.diodes.com October 2013 © Diodes Incorporated ZXM61P02F Typical Characteristics
Document Number DS33478 Rev. 3 - 2 5 of 7 www.diodes.com October 2013 © Diodes Incorporated ZXM61P02F Typical Characteristics - continued Test Circuits Current regulator Ch ar g e Gate charge test circuit Switching time test circuit B a s i cg a t ec h a r g ew a v e f o r m Switching time waveforms D.U.T 50k0.2m F12V Sam e as D.U.T VGS VGS VDS VG QGS QGD QG VGS 90% 10% t(on) t(on) td(on)trtr td(of ) VDS VDD RD RG P uls ewidth , 1m S Duty factor 0.1% VDS ID IG
Document Number DS33478 Rev. 3 - 2 6 of 7 www.diodes.com October 2013 © Diodes Incorporated ZXM61P02F Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 8° All Dimensions in mm Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 X E Y CZ J K1 K H L M All 7° A C B D a
Document Number DS33478 Rev. 3 - 2 7 of 7 www.diodes.com October 2013 © Diodes Incorporated ZXM61P02F IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. Diodes Incorporated does not assume any liability ari sing out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Inco rporated products for any unintended or una uthorized application, Customers shall i ndemnify and hold Diodes Incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of t his document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporate d and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2013, Diodes Incorporated www.diodes.com