ZXM41N10F ZETEX | Alldatasheet

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Technical content

1 SEMICONDUCTORS

FEATURES

  • BVDSS = 100V
  • Low Threshold DEVICE MARKING
  • 410 ZXM41N10F ISSUE 2 - OCTOBER 2006 SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL D MOSFET PARAMETER SYMBOL VALUE UNIT Drain-source voltage V DS 100 V Drain-gate voltage V DGR 100 V Continuous drain current at T amb =25°C I D 170 mA Pulsed drain current I DM 680 mA Gate-source voltage V GS ±2 0 V Power dissipation at T amb =25°C P tot 360 mW Operating and storage temperature range T j:Tstg -55 to +150 °C ABSOLUTE MAXIMUM RATINGS SOT23PINOUT TOP VIEW PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS Drain-source breakdown voltage BV DSS 100 V I D=0.25mA, V GS=0V Gate-source threshold voltage V GS(th) 0.5 1.5 V I D=1mA, V DS=V GS Gate-body leakage I GSS 50 nA VGS=±20V , VDS=0V Zero gate voltage drain current I DSS 500 nA V DS=100V, V GS=0V Static drain-source on-state resistance (1) RDS(on) 8 /H9024 /H9024 V GS=4.5V, I D=150mA VGS=3V, I D=50mA Forward transconductance (1)(2) gfs 80 mS V DS=25V, I D=100mA Input capacitance (2) Ciss 25 pF VDS=25V, V GS=0V, f=1MHzCommon source output capacitance (2) Coss 9p F Reverse transfer capacitance (2) Crss 4p F Turn-on delay time (2)(3) td(on) 10 ns VDD ≈30V, I D=280mARise time (2)(3) tr 10 ns Turn-off delay time (2)(3) td(off) 15 ns Fall time (2)(3) tf 25 ns ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) NOTES: (1) Measured under pulsed conditions. Width=300µs. Duty cycle /H113492% (2) Sample test. (3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator

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Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquaters Zetex plc Fields New Road, Chadderton Oldham, OL9 8NP United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com © Zetex Semiconductors plc 2006 PACKAGE OUTLINE PAD LAYOUT DETAILS Controlling dimensions are in millimeters. Approximate conversions are given in inches DIM Millimeters Inches DIM Millimeters Inches Min Max Min Max Min Max Max Max G 1.90 NOM 0.075 NOM /H905210/H11034TYP 10 /H11034TYP PACKAGE DIMENSIONS