ZXGD3109N8
Document overview
- Manufacturer or author: Diodes Incorporated
- PDF pages: 13
Technical content
Features
Frequency of Operation Up to 500kHz Suitable for Discontinuous Conduction Mode (DCM) and Critical Conduction Mode (CrCM) Minimum On-Time and Off-Time to Reduce Turn-On/Off Oscillations Intelligent Light Load Detection and Sleep Mode Turn-Off Propagation Delay Time of 30ns Typically Drain Voltage Rating of 200V Recommended Operating Voltage from 4.5V up to 12V Source and Sink Current of 2A and 4A Respectively Low Component Count Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony free. “Green” Device (Note 3) For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/ Mechanical Data Case: SO-8 Case Material: Molded Plastic. “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 Weight: 0.074 grams (Approximate) Ordering Information (Note 4) Product Marking Reel Size (inches) Tape Width (mm) Quantity per Reel ZXGD3109N8TC ZXGD3109 13 12 2,500 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Hal ogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. Top View Pin-Out SO-8 Top view VCC GND TON VS VD PGATE TOFF/EN GATE PART OBSOLETE NO ALTERNATE PART
Document Number DS37178 Rev. 2 - 4 2 of 13 www.diodes.com March 2020 © Diodes Incorporated ZXGD3109N8 OBSOLETE – PART DISCONTINUED Marking Information Functional Block Diagram ZXGD = Product Type Marking Code, Line 1 3109 = Product Type Marking Code, Line 2 YY = Year (ex: 15 = 2015) WW = Week (01 - 53) ZXGD 3109 YY WW
Document Number DS37178 Rev. 2 - 4 3 of 13 www.diodes.com March 2020 © Diodes Incorporated ZXGD3109N8 OBSOLETE – PART DISCONTINUED Pin Descriptions Pin Number Pin Name Function
1 TON Minimum On-Time
Minimum on-time setting pin. Connect this pin to Ground via RTON resistor.
2 TOFF/EN
Minimum Off-Time/Enable Pin This pin combines the functions of setting the programmable minimum off-time as well as acting as the Enable Pin. The device enters Undervoltage Lockout (UVLO) mode when VCC falls below the UVLO threshold. At this point, the TOFF/EN Pin is internally shorted to Ground through a resistor. The internal current source (used for setting TOFF) is powered down. Once the UVLO threshold is exceeded, the internal resistor is removed and the current source is activated. If the voltage applied to the TOFF/EN Pin exceeds the VEN-ON threshold then the device is in Active Mode. If the voltage drops below the VEN-OFF threshold then the device is in Sleep Mode.
3 VS Source Voltage
Connect this pin to the source of the synchronous MOSFET 4 VD Drain Voltage The pin needs to be connected as closely as possible to the transformer used in the application to minimize the effects of parasitic inductance on the performance of the device. The device requires that VD has a voltage greater than 1.5V, and that the TOFF timer has expired before the MOSFET is able to be activated. Once these conditions are met, and the voltage sensed on the VD Pin is 150mV lower than the VS Pin, the Gate output to the synchronous MOSFET will go high and the TON (minimum on-time) period is started. The MOSFET will remain on for at least the length of the minimum on-time. After the TON period, the MOSFET will remain on until the VD to VS voltage has reached the VTHOFF threshold, at which point the Gate output will go low. If the VTHOFF threshold is reached before the TON period has expired, the device will enter the Light Load Mode. Under this mode, the MOSFET will not be turned on the next switching cycle. The device will come out of light load once the on-time of the synchronous MOSFET exceeds the set minimum on-time.
5 PGATE Protection MOSFET Gate
A 100nF capacitor should be connected between this pin and GND.
6 GATE
Connect GATE to the gate of the synchronous MOSFET through a small-series resistor using short PC board tracks to achieve optimal switching performance. The Gate output can source >2A peak source current while turning on the sync MOSFET, and can sink >4A peak current while turning on the sync MOSFET.
7 GND
This is the reference potential for all internal comparators and thresholds. A 10µF decoupling capacitor is required to be placed as close as possible between VCC and GND Pins.
8 VCC
VCC supplies all the internal circuitry of the device. A DC supply is required to be connected to this pin. A 10µF or larger capacitor must be connected between this pin and GND Pin as close as possible. The device will not function until the VCC has risen above the UVLO threshold. The device can safely be turned off by bringing VCC below the UVLO threshold (minus the UVLO threshold hysteresis). If VCC drops below the UVLO threshold (minus UVLO threshold hysteresis), the MOSFET is turned off and the TOFF/EN Pin is internally connected to GND.
Document Number DS37178 Rev. 2 - 4 4 of 13 www.diodes.com March 2020 © Diodes Incorporated ZXGD3109N8 OBSOLETE – PART DISCONTINUED Absolute Maximum Ratings (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Supply Voltage, Relative to GND VCC -0.3 to 15 V Drain Pin Voltage VD -1 to +200 V Gate Output Voltage VG 12 V Minimum On-Time (TOFF) Pin Voltage VTOFF -0.3 to 6 V Minimum Off-Time (TON) Pin Voltage VTON -0.3 to 6 V Gate Driver Peak Source Current ISOURCE 5 A Gate Driver Peak Sink Current ISINK 5 A Input Voltage Range VS VS -1 to 1 V Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation Linear Derating Factor (Note 5) PD 490 3.92 mW mW/°C (Note 6) 655 5.24 (Note 7) 720 5.76 (Note 8) 785 6.28 Thermal Resistance, Junction to Ambient (Note 5) RθJA 255 °C/W (Note 6) 191 (Note 7) 173 (Note 8) 159 Thermal Resistance, Junction to Lead (Note 9) RθJL 55 °C/W Thermal Resistance, Junction to Case (Note 10) RθJC 45 °C/W Maximum Jundtion Temperature TJ +150 °C Storage Temperature Range TSTG -65 to +150 ESD Ratings (Note 11) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 2,000 V 1C Electrostatic Discharge - Machine Model ESD MM 500 V C Notes: 5. For a device surface mounted on minimum recommended pad layout FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 6. Same as Note (5), except Pin 8 (VCC) and Pin 7 (GND) are both connected to separate 5mm x 5mm 1oz copper heatsinks. 7. Same as Note (6), except both heatsinks are 10mm x 10mm. 8. Same as Note (6), except both heatsinks are 15mm x 15mm. 9. Thermal resistance from junction to solder-point at the end of each lead on Pin 8 (VCC) and Pin 7 (GND). 10. Thermal resistance from junction to top of the case. 11. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
Document Number DS37178 Rev. 2 - 4 5 of 13 www.diodes.com March 2020 © Diodes Incorporated ZXGD3109N8 OBSOLETE – PART DISCONTINUED Recommended Operating Conditions Symbol Parameter Min Max Unit VCC Supply Voltage Range 4.5 12 V VDS Voltage Cross Drain and Source -1 200 FSW Switching Frequency 20 600 kHz TJ Operating Junction Temperature Range -40 +125 °C RTOFF TOFF Resistor Value 85 200 kΩ RTON TON Resistor Value 8.25 100 kΩ CVCC VCC Bypass Capacitor 10 — μF Thermal Derating Curve 0 20 40 60 80 100 120 140 160 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 15mm x 15mm 5mm x 5mm Minimum Layout Derating Curve Junction Temperature (° C) Max Power Dissipation (W) 10mm x 10mm (°C)
Document Number DS37178 Rev. 2 - 4 6 of 13 www.diodes.com March 2020 © Diodes Incorporated ZXGD3109N8 OBSOLETE – PART DISCONTINUED Electrical Characteristics (@TA = +25° C, unless otherwise specified.) Symbol Parameter Conditions Min Typ Max Unit ICCSTART Supply Current (Undervoltage) VCC = 2.6V — 160 220 µA ICCSTANDBY Supply Current (Disabled) VCC = 5.5V, REN/OFF = 0Ω — 380 500 VCC = 12V, REN/OFF = 0Ω — 450 600 ICCON Supply Current (Enabled) VCC = 5.5V, FSW = 100KHz CGATE = 0pF — 1.5 1.8 mA VCC = 12V, FSW = 100KHz CGATE = 0pF — 1.8 2.3 VCC = 5.5V, FSW = 100KHz CGATE = 3,300pF — 3.2 4 VCC = 12V, FSW = 100KHz CGATE = 3,300pF — 5 7 VEN-ON TOFF/EN Turn-on Threshold, Rising TOFF/EN Driven, VTON > 0.6V 1.31 1.4 1.49 V VEN-OFF TOFF/EN Turn-off Threshold, Falling TOFF/EN Driven, VTON > 0.2V 0.55 0.6 0.65 IEN-START TOFF/EN Input Current (Disabled) RTOFF = 50kΩ -23 -20 -17 µA IEN-ON TOFF/EN Input Current (Enabled) RTOFF = 100kΩ -11.5 -10 -8.5 Undervoltage Lockout (UVLO) UVLOTH VCC Undervoltage Lockout Threshold Rising — 2.8 3.0 3.20 V UVLOHYS VCC Undervoltage Lockout Threshold Hysteresis — — 200 — mV MOSFET Voltage Sensing VTHARM Gate Re-Arming Threshold VD to GND, Rising -1.3 1.5 -1.7 V VTHON Gate Turn-On Threshold (VD-VS) Falling, VS = 0V -220 -150 -80 mV VTHOFFLV Gate Turn-Off Threshold (VD-VS) Rising, VS = 0V, VCC < 4.3V -30 -20 -10 mV VTHOFFHV Gate Turn-Off Threshold (VD-VS) Rising, VS = 0V, VCC > 4.3V -10 -4 -1 mV TD(ON) Gate Turn-On Propagation Delay From VTHON to Gate > 1V — 30 52 ns TD(OFF) Gate Turn-Off Propagation Delay From VTHOFF to Gate < 4V — 30 62 ns Minimum On-Time TON-LR Minimum On-Time Low Resistance RTON = 8.25kΩ 0.26 0.34 0.42 µs TON-HR Minimum On-Time High Resistance RTON = 100kΩ 2.2 3 3.8 µs
Document Number DS37178 Rev. 2 - 4 7 of 13 www.diodes.com March 2020 © Diodes Incorporated ZXGD3109N8 OBSOLETE – PART DISCONTINUED Electrical Characteristics (Continued) (@TA = +25° C, unless otherwise specified.) Minimum Off-Time TOFF-LR Minimum Off-Time Low Resistance RTOFF = 100kΩ 1.2 3 5 µs TOFF-HR Minimum Off-Time High Resistance RTOFF = 200kΩ 15 21 25 µs TOFF-LV Minimum Off-Time Low Voltage VEN/TOFF = 1V — 3 — µs TOFF-HV Minimum Off-Time High Voltage VEN/TOFF = 2V — 21 — µs TOFF-OV Minimum Off-Time Over Voltage 2V < VEN/TOFF < VAVDD — 21 — µs Gate Driver RGUP Gate Pull-Up Resistance Enabled IGATE = -100mA — 2.3 — Ω RGDN Gate Pull-Down Resistance Enabled IGATE = 100mA — 1.1 — ISOURCE Peak Gate Source Current CGATE = 22nF — 3 — A ISINK Peak Gate Sink Current CGATE = 22nF — 4 — VOHG Gate Output High Voltage VCC = 5V 4.7 — — V VCC = 12V 9 — — VOLG Gate Output Low Voltage VCC = 5V — — 0.3 TFGATE Gate Fall Time 4V to 1V, CGATE = 3,300pF, VCC = 5V — 14 42 ns 9V to 1V, CGATE = 3,300pF, VCC = 12V — 20 42 TRGATE Gate Rise Time 1V to 4V, CGATE = 3,300pF, VCC = 5V — 16 42 1V to 10V, CGATE = 3,300pF, VCC = 12V — 20 42 TDIS Disable Delay (Note 8) EN Falling to Gate Falling — 160 — Exception Handling TOVER Overtemperature — — +150 — °C TRECOVER Temperature to Recover from Overtemperature Exception — — +125 — °C
Document Number DS37178 Rev. 2 - 4 8 of 13 www.diodes.com March 2020 © Diodes Incorporated ZXGD3109N8 OBSOLETE – PART DISCONTINUED Typical Application Circuit +Vout PWM controller CrCM/DCM - Vout ZXGD3109 Drain Gate Source RTON RTOFF/EN PGATE Vcc RTON RTOFF G D S C1 C2 Snubber Transformer Synchronous MOSFET CPGATE GND CPGATE of 0.1µF must be connected C1 of >10µF must be connected as close as possible to Vcc and ground with minimum track length ZXTR2012 IN GND OUT C3 of 1µF must be connected Less than 12V rails can be directly connected to the Vcc. For more than 12V operation, a regulator arrangement is suggested in the figure.
Document Number DS37178 Rev. 2 - 4 12 of 13 www.diodes.com March 2020 © Diodes Incorporated ZXGD3109N8 OBSOLETE – PART DISCONTINUED Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SO-8 SO-8 Dim Min Max Typ A 1.40 1.50 1.45 A1 0.10 0.20 0.15 b 0.30 0.50 0.40 c 0.15 0.25 0.20 D 4.85 4.95 4.90 E 5.90 6.10 6.00 E1 3.80 3.90 3.85 E0 3.85 3.95 3.90 e -- -- 1.27 h - -- 0.35 L 0.62 0.82 0.72 Q 0.60 0.70 0.65 All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SO-8 Dimensions Value (in mm) C 1.27 X 0.802 X1 4.612 Y 1.505 Y1 6.50 b e E A 9° (All sides) 4°± 3° c Q h 45° R 0.1 D L Seating Plane Gauge Plane C X Y
Document Number DS37178 Rev. 2 - 4 13 of 13 www.diodes.com March 2020 © Diodes Incorporated ZXGD3109N8 OBSOLETE – PART DISCONTINUED IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended o r unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or system s without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety -critical, life support devices or systems, notwithstanding any devices - or systems -related information or support that m ay be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2020, Diodes Incorporated www.diodes.com