ZXGD3103N8
Document overview
- Manufacturer or author: Diodes Incorporated
- PDF pages: 12
Technical content
Features
5 to15V VCC Range Operation Up to 250kHz 180V Drain Voltage Rating Proportional Gate Drive to Minimize Body Diode Conduction Turn-off Propagation Delay 15ns and Turn-off Time 20ns Detector Threshold Voltage ~10mV Standby Current 5mA Suitable for Discontinuous Mode (DCM), Critical Conduction Mode (CrCM) and Continuous Mode (CCM) Operation Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data Case: SO-8 Case material: Molded Plastic. ―Green‖ Molding Compound UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 Weight: 0.074 grams (Approximate) DRAIN GATEH GND REF BIAS Vcc GATEL 3103 Synchronous Rectifier MOSFET Transformer RBIASRREF ZXGD Ordering Information (Note 4) Product Marking Reel Size (inches) Tape Width (mm) Quantity per Reel ZXGD3103N8TC ZXGD3103 13 12 2,500 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Hal ogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. Marking Information Pin Name Pin Function GND Ground VCC Power Supply GATEL Gate Turn off GATEH Gate Turn on BIAS Bias connection DRAIN Drain Sense REF Reference DNC Do not connect Top View SO-8 Top View Pin-Out GATEH REF VCC BIAS DRAIN DNC GATEL GND Typical configuration ZXGD = Product Type Marking Code, Line 1 3103 = Product Type Marking Code, Line 2 YY = Year (ex: 16 = 2016) WW = Week (01 to 53) ZXGD 3103 YY WW
Document number: DS32255 Rev. 3 - 2 2 of 12 www.diodes.com June 2016 © Diodes Incorporated ZXGD3103N8 Functional Block Diagram Differential amplifier High volt comparator Threshold voltage control Driver Gate drive amplitude control Turn-on/off control GATEH GATEL Vcc GND DRAIN REF BIAS Pin Functions Pin Number Pin Name Pin Function and Description
1 DNC Do not connect
2 REF Reference
This pin is connected to VCC via resistor, RREF
3 GATEL Gate turn off
This pin sinks current, ISINK, from the synchronous MOSFET Gate
4 GATEH Gate turn on
This pin sources current, ISOURCE, to the synchronous MOSFET Gate
5 Vcc Power Supply
This is the supply pin. It is recommended to decouple this point to ground closely with a ceramic capacitor.
6 GND Ground
This is the Ground reference point. Connect to the synchronous MOSFET Source terminal.
7 BIAS Bias
This pin is connected to VCC via resistor RBIAS
8 DRAIN Drain Connection
Connect this pin to the synchronous MOSFET drain terminal.
Document number: DS32255 Rev. 3 - 2 3 of 12 www.diodes.com June 2016 © Diodes Incorporated ZXGD3103N8 Absolute Maximum Ratings (Voltage relative to GND, @ TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Supply Voltage VCC 15 V Continuous Drain Pin Voltage VD -3 to 180 V GATEH and GATEL Output Voltage VG -3 to VCC + 3 V Gate Driver Peak Source Current ISOURCE 2.5 A Gate Driver Peak Sink Current ISINK 6 A Reference Current IREF 25 mA Bias Voltage VBIAS VCC V Bias Current IBIAS 100 mA Thermal Characteristics (@ TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Power Dissipation Linear Derating Factor (Note 5) PD 490 3.92 mW mW/°C (Note 6) 655 5.24 (Note 7) 720 5.76 (Note 8) 785 6.28 Thermal Resistance, Junction to Ambient (Note 5) RθJA 255 °C/W (Note 6) 191 (Note 7) 173 (Note 8) 159 Thermal Resistance, Junction to Lead (Note 9) RθJL 135 °C/W Operating Temperature Range TJ -40 to +150 °C Storage Temperature Range TSTG -55 to +150 °C ESD Ratings (Note 10) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 2,000 V 2 Electrostatic Discharge - Machine Model ESD MM 300 V B Notes: 5. For a device surface mounted on minimum recommended pad layout FR -4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 6. Same as Note 5, except pin 5 (Vcc) and pins 6 (PGND) are both connected to separate 5mm x 5mm 1oz copper heat -sinks. 7. Same as Note 6, except both heat-sinks are 10mm x 10mm. 8. Same as Note 6, except both heat-sinks are 15mm x 15mm. 9. Thermal resistance from junction to solder-point at the end of each lead on pin 6 (GND) and pin 5 (VCC). 10. Refer to JEDEC specification JESD22-A114 and JESD22-A11.
Document number: DS32255 Rev. 3 - 2 4 of 12 www.diodes.com June 2016 © Diodes Incorporated ZXGD3103N8 Thermal Derating Curve 0 20 40 60 80 100 120 140 160 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 15mm x 15mm 5mm x 5mm Minimum Layout Derating Curve Junction Temperature ( O Max Power Dissipation (W) 10mm x 10mm Electrical Characteristics (@ VCC = 10V, TA = +25° C, RBIAS = 3.3kΩ , RREF = 4.3kΩ, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition Input Supply Operating Current IOP — 2.16 — mA VD ≤ -200mV — 5.16 — mA VD ≥ 0mV Gate Driver Turn-off Threshold Voltage VT -16 -10 0 mV VG =1V, RH = 100kΩ, RL = o/c Gate Output Voltage VG(OFF) — 0.73 1 V VD ≥ 0mV, RH = 100kΩ, RL = o/c VG 6 7.2 — VD = -50mV, RH = o/c, RL = 100kΩ VG 8.8 9.2 — VD = -100mV, RH = o/c, RL = 100kΩ VG 9.2 9.4 — VD ≤ -150mV, RH = o/c, RL = 100kΩ VG 9.3 9.5 — VD ≤ -200mV, RH = o/c, RL = 100kΩ Switching Performance Turn-On Propagation Delay tD1 — 150 — ns Refer to application test circuit below Gate Rise Time tR — 450 — Turn-Off Propagation Delay tD2 — 15 — Gate Fall Time, Continuous Conduction Mode tF — 21 — Gate Fall Time, Discontinuous Conduction Mode tF — 17 — DRAIN GATEH GND REF BIAS Vcc GATEL 3103 150V MOSFET: Qg(TOT) = 82nC, RDS(ON) = 15mΩ Flyback Transformer: Magnetising Inductance = 820μH RBIAS 3.3KΩ RREF 4.3KΩ 1μF ZXGD Vcc = 10V Output Load = 12V, 30W Test Conditions: Primary Side Input Voltage = 110V Primary MOSFET Switching Frequency = 100kHz Continuous Conduction Mode VD VG
Document number: DS32255 Rev. 3 - 2 5 of 12 www.diodes.com June 2016 © Diodes Incorporated ZXGD3103N8 Typical Electrical Characteristics (@ TA = +25° C, unless otherwise specified.) 0 5 10 15 20 25 -100 -80 -60 -40 -20 0 -100 -80 -60 -40 -20 0 -50 -25 0 25 50 75 100 125 150 -25 -20 -15 -10 1k 10k 100k 100 0 2 4 6 8 10 12 14 16 18 20 22 100 Current flow Gate to Ground Current flow Supply to Gate Gate Current vs Capacitive Load Peak Current (A) Capacitance (nF) VCC = 10V RBIAS=3K3 RREF=4K3 T = 25 O C See Resistor Table for Values VCC = 15V VCC = 12V VCC = 10V VCC = 5V Transfer Characteristic VG Gate Voltage (V) VD Drain Voltage (mV) T = -40 O C T = 25 O C T = 85 O C T = 125 O C Transfer Characteristic VG Gate Voltage (V) VD Drain Voltage (mV) VCC = 10V RBIAS=3K3 RREF=4K3 100k pull down VCC = 10V RBIAS=3K3 RREF=4K3 VG = 1V 100k pull up Drain Sense Voltage vs Temperature VD Drain Voltage (mV) Temperature ( O VCC = 10V RBIAS=3k3 RREF=4K3 D = 0.5 Supply Current vs Frequency Supply Current (mA) Frequency (Hz) CLOAD=22nF CLOAD=10nF CLOAD=4.7nF CLOAD=2.2nF CLOAD=1nF VCC = 5V VCC = 10V VCC = 12V VCC = 15V Supply Current vs Capacitive Load Capacitance (nF) Supply Current (mA) RBIAS=3k3 RREF=4K3 D = 0.5 f=250kHz
Document number: DS32255 Rev. 3 - 2 6 of 12 www.diodes.com June 2016 © Diodes Incorporated ZXGD3103N8 Typical Electrical Characteristics (@ TA = +25° C, unless otherwise specified.) (Cont.) -40 -20 0 20 40 60 80 100 120 140 0.0 0.1 0.2 0.3 -40 -20 0 20 40 60 80 100 120 140 -50 -25 0 25 50 75 100 125 150 VCC=10V RBIAS=3k3 RREF=4K3 CLOAD=10nFVD Switch On Speed Voltage (V) Time (s) VG VCC=10V RBIAS=10k RREF=4K7 CLOAD=10nF VG VD Switch Off Speed Voltage (V) Time (ns) VCC=10V RBIAS=3k3 RREF=4K3 CLOAD=10nF Gate Drive On Current Gate Current (A) Time (s) VCC=10V RBIAS=3k3 RREF=4K3 CLOAD=10nF Gate Drive Off Current Gate Current (A) Time (ns) VCC=10V RBIAS=3k3 RREF=4K3 CLOAD=10nF tOFF= tD + tF Switching vs Temperature Percent Change Time (%) Temperature ( O tON= tD + tR
Document number: DS32255 Rev. 3 - 2 9 of 12 www.diodes.com June 2016 © Diodes Incorporated ZXGD3103N8 Typical Waveforms Fig 4a: Critical Conduction Mode Switch On Speed Time (μs) Voltage (V) . VG VD VCC = 10V RBIAS = 3K3 RREF = 4K3 Qg(TOT) = 82nC Fig 4b: Typical Switch ON Speed when Driving a Qg(TOT) = 82nC MOSFET Fig 4c: Typical Switch OFF Speed when Driving a Qg(TOT) = 82nC MOSFET Switch OFF Speed Time (μs) Voltage (V) . VG VD VCC = 10V RBIAS = 3K3 RREF = 4K3 Qg(TOT) = 82nC Switch On Speed Switch On Speed VCC=10V RBIAS=3K3 RREF=4K3 Qg(TOT)=82nC VCC=10V RBIAS=3K3 RREF=4K3 Qg(TOT)=82nC
also recommended for high switching frequency power conversion to minimize body diode conduction. External gate resistors are optional. They can be inserted to control the rise and fall time which may help with EMI issues. from Table 1 based on the desired Vcc value. This provides the typical ZXGD3103’s detection threshold voltage of 10mV. Table 1. Recommended Resistor Values for Various Supply Voltages
Document number: DS32255 Rev. 3 - 2 11 of 12 www.diodes.com June 2016 © Diodes Incorporated ZXGD3103N8 Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SO-8 Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SO-8 Note: For high voltage applications, the appropriate industry sector guidelines should be considered with regards to creepage and c learance distances between device Terminals and PCB tracking. SO-8 Dim Min Max A - 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h - 0.35 L 0.62 0.82 0 8 All Dimensions in mm Dimensions Value (in mm) X 0.60 Y 1.55 C1 5.4 C2 1.27 X Y
Document number: DS32255 Rev. 3 - 2 12 of 12 www.diodes.com June 2016 © Diodes Incorporated ZXGD3103N8 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any lia bility arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license unde r its patent or trademark rights, nor the rights of others. Any Customer or user of this document or pro ducts described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diod es Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product nam es and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of t his document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety -critical, life support devices or systems, notwithstanding any devices - or systems -related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Incorporated products in such safety-critical, life support devices or systems. Copyright © 2016, Diodes Incorporated www.diodes.com