ZXGD3101T8 ZETEX | Alldatasheet
Document overview
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Technical content
Features
- Turn-off propagation delay 15ns and turn- off time 20ns Suitable for Discontinuous Mode (DCM), Critical Conduction Mode (CrCM) and Continuous mode(CCM) operation Compliant with Energy Star V2.0 and European Code of Conduct V3 Low component count Halogen free 5 - 1 5 V V CC range
Applications
Flyback converters in: Adaptors L C D m o n i t o r s S e r v e r P S U ’ s Set top boxes Refer to documents; AN54, DN90 and DN91 available from the website Pin out detail Typic al configuration Device Status Package Part Mark Reel size (inches) Tape width (mm) Quantity per reel ZXGD3101T8TA Active SM8 ZXGD3101 7 12 1000 N/C 1 REF GATEH GATEL DRAIN BIAS VCC GND SM8 DRAIN GATEH GND REF BIAS Vcc GATEL 3101 Synchronous Rectifier MOSFET R BIASR REF ZXGD Transformer
Issue 3 - November 2008 2 www.zetex.com © Diodes Incorporated 2008 www.diodes.com Absolute maximum ratings NOTES: 1. All voltages are relative to GND pin Thermal resistance ESD Rating Parameter Symbol Limit Unit Supply voltage1 VCC 15 V Continuous Drain pin voltage1 VD -3 to180 V GATEH and GATEL output Voltage1 VG -3 to VCC + 3 V Driver peak source current I SOURCE 3A Driver peak sink current I SINK 3A Reference current I REF 25 mA Bias voltage V BIAS VCC V Bias current I BIAS 100 mA Power dissipation at TA =25°CP D 500 mW Operating junction temperature T j -40 to +150 °C Storage temperature T stg -50 to +150 °C Parameter Symbol Value Unit Junction to ambient (*) NOTES: (*) Mounted on minimum 1oz copper on FR4 PCB in still air conditions RθJA 250 °C/W Junction to lead (†) (†) Output Drivers - Junction to solder point at end of the lead 5 and 6 RθIA 54 °C/W Model Rating Unit Human body 4,000 V Machine 400 V
Issue 3 - November 2008 3 www.zetex.com © Diodes Incorporated 2008 www.diodes.com Electrical characteristics at TA = 25°C; VCC = 10V; RBIAS = 1.8kΩ; RREF=3kΩ Refer to Fig 4; Test circuit and Fig 5; Timing diagram on page 11 Parameter Symbol Conditions Min. Typ. Max. Unit Input and supply characteristics Operating current I OP VD ≤ -200m V - 3 - mA VD ≥ 0V - 8 - Gate Driver GATE output voltage (GATEH connected to GATEL) V G VD ≥ 0V (*) NOTES: (*) RH = 1kΩ, RL = O/C -0 1 . 0 V VD = -50mV (†) (†) RH = O/C, RL = 1kΩ 26 - VD = -75mV(†) 68 - GATEH peak source current ISOURCE VGH = 1V 2.5 - A GATEL peak sink current I SINK VGL = 5V 2.5 - A Turn on Propagation delay t d1 CL = 2.2nF(†) 525 ns Turn off Propagation delay td2 CL = 2.2nF(†) 15 ns Gate rise time t r CL = 2.2nF(†) 305 ns Gate fall time t f CL = 2.2nF(†) 20 ns
Issue 3 - November 2008 4 www.zetex.com © Diodes Incorporated 2008 www.diodes.com Schematic symbol and pin description Pin No. Symbol Description and function
1 NC No connection
This pin can be connected to GND 2R E F R e f e r e n c e This pin is connected to VCC via resistor, RREF. RREF should be selected to source ~3mA into this pin. (*) NOTES: (*) BIAS and REF pins should be assumed to be at GND+0.7V.
3 GATEL Gate turn off
This pin sinks current, ISINK, from the synchronous MOSFET Gate.
4 GATEH Gate turn on
This pin sources current, ISOURCE, to the synchronous MOSFET Gate. 5V CC Power Supply This is the supply pin. It is recommended to decouple this point to ground closely with a ceramic capacitor.
6 GND Ground
This is the ground reference point. Connect to the synchronous MOSFET Source terminal.
7 BIAS Bias
This pin is connected to V CC via resistor, RBIAS. RBIAS should be selected to source ~5mA into this pin.(*)
8 DRAIN Drain connection
This pin connects directly to the synchronous MOSFET Drain terminal. High Volt comparator High Volt comparator Threshold Voltage Control Driver DRAIN GND GATEH GATEL BIASREF Gate Drive Control Turn-on/off Control Vcc
Issue 3 - November 2008 5 www.zetex.com © Diodes Incorporated 2008 www.diodes.com Operation Normal Operation The operation of the device is described step-by-step with reference to the timing diagram below. 1. The detector monitors the MOSFET Drain-Source voltage. 2. When, due to transformer action, the MOSFET body diode is forced to conduct there is approximately -0.6V on the Drain pin. 3. The detector outputs a positive voltage with respect to ground, this voltage is then fed to the MOSFET driver stage and current is sourced out of the GATEH pin. 4. The current out of the GATEH pin is sourced into the synchronous MOSFET Gate to turn the device on. 5. The GATEH output voltage is now proportional to the Drain-Source voltage drop across the MOSFET due to the current flowing through the MOSFET. 6. MOSFET conduction continues until the drain current reaches zero. 7. At zero current the detector output voltage is zero and the synchronous MOSFET Gate voltage is pulled low by the GATEL, turning the device off. Drain current zero Body Diode Conduction MOSFET Drain Voltage MOSFET Gate Voltage MOSFET Gate Current
Figure 1. Typical waveforms
Issue 3 - November 2008 7 www.zetex.com © Diodes Incorporated 2008 www.diodes.com Typical characteristics Turn-off offset voltage Turn-off offset voltage
Issue 3 - November 2008 8 www.zetex.com © Diodes Incorporated 2008 www.diodes.com Typical characteristics Turn-off offset voltage
Issue 3 - November 2008 9 www.zetex.com © Diodes Incorporated 2008 www.diodes.com Typical characteristics Component selection It is advisable to decouple the ZXGD3101 closely to VCC and ground due to the possibility of high peak gate currents with C1 in Figure 2. The proper selection of external resistors R REF and R BIAS is important to the optimum device operation. Select a value for resistor RREF to give a reference current, IREF, of ~3mA. The value of RBIAS must then be 0.6 times the value of RREF to give a bias current, IBIAS, of 1.6 times IREF. This provides a recommended typical offset voltage of -20mV. External gate resistors are optional. They can be inserted to control the rise times which may help with EMI issues, power supply consumption issues or dissipation within the part. RREF = (VCC -0.7V)/ 0.003 RBIAS = (VCC -0.7V)/ 0.005 Layout considerations The Gate pins should be as clos e to the MOSFET Gate as possible. Also the ground return loop should be as short as possible. The decoupling capacitor should be close to the VCC and Ground pin, and should be a X7R type. For more detailed information refer to application note AN54.
Issue 3 - November 2008 12 www.zetex.com © Diodes Incorporated 2008 www.diodes.com Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Soldering footprint DIM Millimeters Inches DIM Millimeters Inches 2.8 0.110 6.8 0.268 4.6 0.181 0.95 0.037 1.52 0.060 mm inches
Issue 3 - November 2008 13 www.zetex.com © Diodes Incorporated 2008 www.diodes.com A Product Line of Diodes Incorporated Intentionally left blank
Issue 3 - November 2008 14 www.zetex.com © Diodes Incorporated 2008 www.diodes.com Sales offices The Americas 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 Tel: (+1) 805 446 4800 Fax: (+1) 805 446 4850 Europe Kustermann-Park Balanstraße 59, D-81541 München Germany Tel: (+49) 894 549 490 Fax: (+49) 894 549 4949 Taiwan 7F, No. 50, Min Chuan Road Hsin-Tien Taipei, Taiwan Tel: (+886) 289 146 000 Fax: (+886) 289 146 639 Shanghai Rm. 606, No.1158 Changning Road Shanghai, China Tel: (+86) 215 241 4882 Fax (+86) 215 241 4891 Shenzhen ANLIAN Plaza, #4018 Jintian Road Futian CBD, Shenzhen, China Tel: (+86) 755 882 849 88 Fax: (+86) 755 882 849 99 Korea
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1005-5 Yeongtong-dong, Yeongtong-gu, Suwon-si, Gyeonggi-do, Korea 443-813 Tel: (+82) 312 731 884 Fax: (+82) 312 731 885 Definitions Product change Diodes Incorporated reserves the right to alter, without notice, specifications, desi gn, price or conditions of supply of any p roduct or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The circuits in this design/application note are offered as desi gn ideas. It is the responsibility of the user to ensure that t he circuit is fit for the user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoev er is assumed by Diodes Inc. with respect to the accuracy or use of such information, or infringement of patents or other intellectua l property rights arising from such use or otherwise. Diodes Inc. does not assume any legal responsibility or will not be held legally lia ble (whether in contract, tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract, opportunity or consequential loss in the use of these circuit applications, under any circumstances. Life support Diodes Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labelling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support devi ce or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Reproduction The product specifications contained in this publication are issu ed to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. Terms and Conditions All products are sold subjects to Diodes Inc. terms and conditio ns of sale, and this disclaimer (save in the event of a conflic t between the two when the terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement. For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Diodes or Zetex sales office. Quality of product Diodes Zetex Semiconductors Limited is an ISO 9001 and TS16949 certified semiconductor manufacturer. To ensure quality of service and products we strongly advise th e purchase of parts directly from Diodes Inc. or one of our regi onally Diodes Inc. does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales ch annels. ESD (Electrostatic discharge) Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices. The possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent of damage can vary from immediate functional or parametric malfunc tion to degradation of function or performance in use over ti me. Devices suspected of being affected should be replaced. Green compliance Diodes Inc. is committed to environmental excellence in al l aspects of its operations which includes meeting or exceeding reg ulatory requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to reduce the use of hazardous substances and/or emissions. All Diodes Zetex components are co mpliant with the RoHS directive, and through this it is supporting its customers in their com pliance with WEEE and ELV directives. Product status key: “Preview” Future device intended for production at some point. Samples may be available “Active” Product status recommended for new designs “Last time buy (LTB)” Device will be discontinued and last time buy period and delivery is in effect “Not recommended for new designs” Device is still in production to support existing designs and production “Obsolete” Production ha s been discontinued Datasheet status key: “Draft version” This term denotes a very early datasheet ver sion and contains highly provisional information, which may change in any manner without notice. “Provisional version” This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance. However, changes to the test conditions and specifications may occur, at any time and without notice. “Issue” This term denotes an issued datasheet cont aining finalized specifications. However, changes to specifications may occur, at any time and without notice.