ZXCT1009_11 DIODES | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 8
Technical content
Features
- Low cost, accurate high-side current sensing
- Output voltage scaling
- Up to 2.5V sense voltage
- 2.5V to 20V supply range
- 4 μA quiescent current
- 1% typical accuracy
- SOT23 and SM8 packages
- AEC-Q100.3 qualified; ZXCT1009FTA only
Applications
- Battery chargers
- Smart battery packs
- DC motor control
- Over current monitor
- Power management
- Level translating
- Programmable current source Pin Assignments SOT23 Package Suffix - F SM8 Package Suffix – T8 Application Circuit IOUT VSENSE+ 3VSENSE- (Top View)
1 IOUT
(Top View) IOUT N/C VSENSE- N/C (Top View) N/C VSENSE+ N/C N/C IOUT N/C VSENSE- N/C (Top View) N/C VSENSE+ N/C N/C VIN RSENSE To load VOUT ROUT 2 3 ZXCT1009 VSENS E+ VSENSE- IOU T VIN RSENSE To load VOUT ROUT 2 3 ZXCT1009 VSENS E+ VSENSE- IOU T
Document number: DS33441 Rev. 12 - 2 2 of 8 www.diodes.com April 2011 © Diodes Incorporated Pin Descriptions Pin Name Pin Function VSENSE+ Connection to supply voltage VSENSE- Connection to load IOUT Output current, proportional to measured current Absolute Maximum Ratings (TA = 25°C) Description Rating Unit Voltage on any pin (relative to IOUT) -0.6 to 20 V Continous output current, IOUT 25 mA Continuous sense voltage, VSENSE † -0.5 to +5 V Operating temperature, TA -40 to 85 °C Storage temperature -55 to 125 °C Package power dissipation @ TA = 25°C (Derate to zero @ 125°C) SOT23 450 mW SM8 2 W Operation above the absolute maximum rating may cause device failure. Operation at the absolute maximum ratings for extended periods may reduce device reliability. Electrical Characteristics (TA = 25°C, VIN = 5V, ROUT = 100Ω) Symbol Parameter Conditions Limits Units Min Typ Max VIN V CC range 2.5 20 V IOUT
1 Output Current
VSENSE = 0V VSENSE = 10mV VSENSE = 100mV VSENSE = 200mV VSENSE = 1V 0.975 1.95 9.6 104 1.002 2.0 9.98 120 1.025 2.05 10.2 µA µA mA mA mA VSENSE † Sense Voltage 0 2500 mV ISENSE- VSENSE - Input Current 100 nA ACC Accuracy RSENSE = 0.1Ω VSENSE = 200mV -2.5 2.5 GM Transconductance, IOUT/VSENSE 10000 µA/V BW Bandwidth VSENSE(DC) = 10mv, RF PIN = -40dBm‡ VSENSE(DC) = 100mv, RF PIN = -20dBm‡ 300 2 kHz MHz Notes: 1. Includes input offset voltage contribution †. V SENSE is defined as the differential voltage between VSENSE+ and VSENSE-. V SENSE = VSENSE+ - VSENSE- = V IN - VLOAD = I LOAD x RSENSE ‡ -20dBm=63mV PP into 50Ω
Document number: DS33441 Rev. 12 - 2 3 of 8 www.diodes.com April 2011 © Diodes Incorporated Typical Characteristics
Document number: DS33441 Rev. 12 - 2 4 of 8 www.diodes.com April 2011 © Diodes Incorporated Typical Characteristics (cont.) Power Dissipation The maximum allowable power dissipation of the device for normal operation (PMAX), is a function of the package junction to ambient thermal resistance (θJA), maximum junction temperature (TJMAX), and ambient temperature (TAMB), according to the expression: PMAX = (TJMAX – TAMB) / θJA The device power dissipation, P D is given by the expression: PD = IOUT(VIN -VOUT) W
Application Information
The following text describes how to scale a load current to an output voltage. V SENSE = VIN - VLOAD VOUT = 0.01 x VSENSE x ROUT E.g. A 1A current is to be represented by a 100mV output voltage: 1) Choose the value of R SENSE to give 50mV > VSENSE > 500mV at full load. For example VSENSE = 100mV at 1.0A. RSENSE = 0.1/1.0 => 0.1Ω. 2) Choose ROUT to give VOUT = 100mV, when VSENSE = 100mV. Rearranging 1 for Rout gives: ROUT = VOUT /(VSENSE x 0.01) ROUT = 0.1 / (0.1 x 0.01) = 100Ω
Document number: DS33441 Rev. 12 - 2 5 of 8 www.diodes.com April 2011 © Diodes Incorporated Application Information (cont.) Li-Ion Charger Circuit The above figure shows the ZXCT1009 supporting the Benchmarq bq2954 Charge Management IC. Most of the support components for the bq2954 are omitted for clarity. This design also uses the Diodes FZT789A high current Super-ß PNP as the switching transistor in the DC-DC step down converter and the FMMT451 as the drive NPN for the FZT789A. The circuit can be configured to charge up to four Li-Ion cells at a charge curr ent of 1.25A. Charge can be terminated on maximum voltage, selectable minimum current, or maximum time out. Switching frequency of the PWM loop is approximately 120kHz. The ZXCT1009 is intended as a direct functional replacement for the ZDS1009, which is featured in a complete design from Unitrode/Texas Instruments on the Li-Ion charger circuit shown above. Reference: DVS2954S1H Li-Ion Charger Development System. Transient Protection An additional resistor, RLIM can be added in series with ROUT (as below), to limit the current from I OUT. Any circuit connected to V OUT will be protected from input voltage transients. This can be of particular use in automotive applications where load dump and other common transients need to be considered. ZXCT1009 with additional current limiting Resistor R LIM. Assuming the worst case condition of VOUT = 0V; providing a low impedance to a transient, the minimum value of R LIM is given by:- R LIM(min) = (VPK – VMAX)/IPK V PK = Peak transient voltage to be withstood VMAX = Maximum working voltage = 20V IPK = Peak output current = 40mA The maximum value of R LIM is set by VIN(MIN), VOUT(MAX) and the dropout voltage (see transfer characteristic on page 3) of the ZXCT1009 :- RLIM(MAX) = ROUT[VIN(MIN) – (VDP + VOUT(MAX))]/VOUT(MAX) VIN(MIN) = Minimum Supply Operating Voltage VDP = Dropout Voltage VOUT(MAX) = Maximum Operating Output Voltage VIN RSENSE To load VOUT ROUT 2 3 ZXCT1009 VSENSE+ VSENSE- IOUT RLIM VIN RSENSE To load VOUT ROUT 2 3 ZXCT1009 VSENSE+ VSENSE- IOUT RLIM
Document number: DS33441 Rev. 12 - 2 6 of 8 www.diodes.com April 2011 © Diodes Incorporated Application Information (cont.) PCB trace shunt resistor for low cost solution The figure below shows output c haracteristics of the device when using a PCB resistive trace for a low cost solution in replacement for a conventional shunt resistor. The graph shows the linear rise in voltage across the resistor due to the PTC of the material and demonstrates how this rise in resistance value over temperature compensates for the NTCof the device. The figure opposite shows a PCB layout suggestion. The resistor section is 25mm x 0.25mm giving approximately 150mΩ using 1oz copper. The data for the normalised graph was obtained using a 1A load current and a 100Ω output resistor. An electronic version of the PCB la yout is available through Diodes applications group. Effect of Sense Resisitor Material on Temperature Performance Layout shows area of shunt resistor compared to SOT23 package. Not actual size.
Ordering Information
Size Tape Width Quantity per Reel Part Marking Package ZXCT1009FTA Grade 3 7” 8mm 3000 Units 109 SOT23 ZXCT1009F-7 None 7” 8mm 3000 Units 109 SOT23 ZXCT1009T8TA None 7” 12mm 1000 Units ZXCT1009 SM8
Document number: DS33441 Rev. 12 - 2 7 of 8 www.diodes.com April 2011 © Diodes Incorporated Package Outline Dimensions (All Dimensions in mm) 1) SOT23 2) SM8 SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 - - 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 α 0° 8° - All Dimensions in mm SM-8 Dim Min Max Typ A − 1.7 − A1 0.02 0.1 − b − 0.7 − c 0.24 0.32 − D 6.3 6.7 − e − − 1.53 e1 − − 4.59 E 6.7 7.3 − E1 3.3 3.7 − L 0.9 − − All Dimensions in mm 15° 45° L c E D b ee 1 A A M J L D F B C H K G
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