ZXCT1008Q
Document overview
- Manufacturer or author: Diodes Incorporated
- PDF pages: 9
Technical content
Features
Low Cost, Accurate High-Side Current Sensing -40 to +125°C Temperature Range Up to 500mV Sense Voltage 2.5V to 20V Supply Range 4μA Quiescent Current 1% Typical Accuracy SOT23 (Type DN) Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The ZXCT1008Q is suitable for automotive applications requiring specific change control; this part is AEC-Q100 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/
Applications
Automotive current measurements Automotive DC motor stall detections Overcurrent monitors Pin Assignments SOT23 (Type DN) Top View Application Circuit Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen - and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
Document number: DS36890 Rev. 3 - 2 2 of 9 www.diodes.com March 2024 © 2024 Copyright Diodes Incorporated. All Rights Reserved. ZXCT1008Q Pin Descriptions Pin Name Pin Function VSENSE+ Connection to Supply Voltage VSENSE- Connection to Load IOUT Output Current, Proportional to Measured Current Functional Block Diagram Absolute Maximum Ratings (@TA = +25° C, unless otherwise specified. Note 4) Description Rating Unit Voltage on Any Pin (Relative to IOUT) -0.6 to 20 V Continous Output Current, IOUT 25 mA Continuous Sense Voltage, VSENSE (Note 5) -0.5 to 5 V Operating Temperature, TA -40 to +125 °C Storage Temperature -55 to +125 °C Package Power Dissipation @ TA = +25° C (Derate to Zero @ +125° C) 360 mW ESD Susceptibility HBM Human Body Model 2 kV MM Machine Model 300 V CDM Charged Device Model 1 kV Notes: 4. Stresses greater than those listed under Absolute Maximum Ratings can cause permanent damage to the device. These are stress ratings only, a nd functional operation of the device at these or any other conditions beyond those indicated in this specification is not implied. Exposure to Absolute Maximum Ratings for extended periods can affect device reliability. Semiconductor devices are ESD sensitive and can be damaged by exposure to ESD events. Suitable ESD precautions should be taken when handling and transporting these devices. 5. VSENSE is defined as the differential voltage between VSENSE+ and VSENSE- pins. VSENSE = VSENSE+ - VSENSE- = VIN - VLOAD = ILOAD x RSENSE
Document number: DS36890 Rev. 3 - 2 3 of 9 www.diodes.com March 2024 © 2024 Copyright Diodes Incorporated. All Rights Reserved. ZXCT1008Q Electrical Characteristics (@TA = +25° C, VIN = 5V, ROUT = 100Ω, unless otherwise specified.) Symbol Parameter Conditions (Note 5) Min Typ Max Unit VIN VCC Range — 2.5 — 20 V IOUT Output Current (Note 6) VSENSE = 0V VSENSE = 10mV VSENSE = 100mV VSENSE = 200mV VSENSE = 500mV 0.975 1.95 4.8 104 1.0 2.0 5.0 120 1.025 2.05 5.2 µA µA mA mA mA VSENSE Sense Voltage (Note 5) — 0 — 500 mV ISENSE- VSENSE- Input Current — — — 100 nA ACC Accuracy RSENSE = 0.1Ω VSENSE = 200mV -2.5 — +2.5 % GM Transconductance, IOUT/VSENSE — — 10000 — µ A/V BW Bandwidth VSENSE(DC) = 10mv, RF PIN = -40dBm (Note 7) VSENSE(DC) = 100mv, RF PIN = -20dBm 300 kHz MHz Notes: 5. VSENSE is defined as the differential voltage between VSENSE+ and VSENSE- pins. VSENSE = VSENSE+ - VSENSE- = VIN - VLOAD = ILOAD x RSENSE 6. Includes input offset voltage contribution. 7. -20dBm = 63mVPP into 50Ω. Power Dissipation The maximum allowable power dissipation of the device for normal operation (P MAX), is a function of the package junction to ambient thermal resistance (θJA), maximum junction temperature (TJMAX), and ambient temperature (TAMB), according to the expression: PMAX = (TJMAX – TAMB) / θJA The device power dissipation, PD is given by the expression: PD = IOUT x (VIN -VOUT) W
Document number: DS36890 Rev. 3 - 2 4 of 9 www.diodes.com March 2024 © 2024 Copyright Diodes Incorporated. All Rights Reserved. ZXCT1008Q Typical Characteristics
Document number: DS36890 Rev. 3 - 2 5 of 9 www.diodes.com March 2024 © 2024 Copyright Diodes Incorporated. All Rights Reserved. ZXCT1008Q Typical Characteristics (continued)
Application Information
The following text describes how to scale a load current to an output voltage. VSENSE = VIN - VLOAD = RSENSE x ILOAD (1) IOUT = VSENSE x 10mA/V (2) VOUT = IOUT x ROUT (3) Combining (2) and (3) VOUT can be determined to be: VOUT = 0.01 x VSENSE x ROUT (4) Example: A 1A current is to be represented by a 1V output voltage: 1) Choose the value of RSENSE to give 50mV > VSENSE > 500mV at full load. For example set VSENSE = 100mV at 1.0A. Rearranging (1) gives: = 0.1/1.0 = 0.1Ω. 2) Choose ROUT to give VOUT = 1V, when VSENSE = 100mV. Rearranging (4) for ROUT gives: = 1kΩ
© 2024 Copyright Diodes Incorporated. All Rights Reserved. RSENSE can be selected on specific requirements of accuracy, size and power rating. Figure 1. ZXCT1008Q with Additional Current Limiting Resistor RLIM and Zener Z1 need to be considered. The Zener Z1 provides additional protection for local dump, reverse battery and high-voltage transient incidents.
Document number: DS36890 Rev. 3 - 2 7 of 9 www.diodes.com March 2024 © 2024 Copyright Diodes Incorporated. All Rights Reserved. ZXCT1008Q Application Information (continued) PCB Trace Shunt Resistor for Low-Cost Solution The figure below shows output characteristics of the device when using a PCB resistive trace for a low -cost solution in replacement for a conventional shunt resistor. The graph shows the linear rise in voltage across the resistor due to the PTC of the mater ial and demonstrates how this rise in resistance value over temperature compensates for the NTC of the device. The figure opposite shows a PCB layout suggestion. The resistor section is 25mm x 0.25mm giving approximately 150mΩ using 1oz copper. The data for the normalized graph was obtained using a 1A load current and a 100Ω output resistor. An electronic version of the PCB la yout is available through Diodes Incorporated’s applications group. Layout shows area of shunt resistor compared to SOT23 package. Not actual size.
Ordering Information
(Note 8) Package Code Identification Code Qualification Grade (Note 9) Tape Width (mm) Packing Qty. Carrier ZXCT1008QFTA SOT23 (Type DN) F 108 Grade 1 8 3000 Units 7” Tape & Reel Notes: 8. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes -packaging/. 9. ZXCT1008Q has been qualified to AEC-Q100 grade 1 and is classified as “Automotive Grade” which supports PPAP documentation. See ZXCT1008 datasheet for commercial qualified version. Marking Information XXX: 108 (Identification Code) F: SOT23 (Type DN)
Document number: DS36890 Rev. 3 - 2 8 of 9 www.diodes.com March 2024 © 2024 Copyright Diodes Incorporated. All Rights Reserved. ZXCT1008Q Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 (Type DN) E c L D A b e SOT23 Type DN Dim Min Max Typ A 0.89 1.12 1.00 A1 0.01 0.10 0.05 b 0.30 0.51 0.45 c 0.08 0.20 0.10 D 2.80 3.04 3.00 E 2.10 2.64 2.42 E1 1.20 1.40 1.37 e 0.95 REF e1 1.90 REF L 0.25 0.60 0.30 L1 0.45 0.62 0.54 All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 (Type DN) X Y Y1 C Dimensions Value (in mm) C 2.0 X 0.8 X1 1.35 Y 0.9 Y1 2.9 Mechanical Data Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish — Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 Weight: 0.009 grams (Approximate)
Document number: DS36890 Rev. 3 - 2 9 of 9 www.diodes.com March 2024 © 2024 Copyright Diodes Incorporated. All Rights Reserved. ZXCT1008Q IMPORTANT NOTICE 1. DIODES INCORPORATED (Diodes) AND ITS SUBSIDIARIES MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON -INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes ’ products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who d esign with Diodes’ products. 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