Z5W48V KEC | Alldatasheet
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Technical content
- 7. 31 1/2 SEMICONDUCTOR TECHNICAL DATA Z5W48V ZENER DIODE SILICON DIFFUSED-JUNCTION TYPE Revision No : 3 BEST SUITED FOR OVERVOLTAGE PROTECTION OF ELECTRONIC SYSTEM : ELECTRONIC SYSTEM FOR USE IN AUTOMOBILES ELECTRONIC SYSTEM FOR COMMERCIAL USE ELECTRONIC SYSTEM FOR INDUSTRIAL USE FOR COMMUNICATIONS, CONTROLS, MEASURING INSTRUMENTS, ETC.
FEATURES
High surge power withstanding capabilities that absorb load dump surge. Excellent surge responsibility for steep surge absorption. Surface mount type is available for easy applications. Corresponds to taping packages. Automotive AEC Q101 Qualified. MSL Level 1 guaranteed (Tpeak = 260 MAXIMUM RATINGS (Ta=25 DIM MILLIMETERS DO-218 A B C D E 10.0 0.5 8.5 0.5 13.5 0.3 15.5 0.5 F 5.0 0.3 G H I J K L 9.0 0.3 2.0 0.5 3.0 0.5 2.7 0.5 3.3 0.5 7.6 0.5 10.0 0.3 C B A D E G H I F J K L ANODE CATHODE ANODE CATHODE Weight : 2.5g ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Zener Voltage VZ IZ=10mA 43.2 48.0 52.8 V Operating Resistance rd IZ=10mA - - 65 Temperature Coefficient T IZ=10mA - 39 62 mV/ Forward Voltage VF IF=6A - - 1.0 V IF=100A - - 1.2 V Reverse Current IR VR=38.4V - - 10 A CHARACTERISTIC SYMBOL RATING UNIT Allowable Power Dissipation (Note 1) P 5 W Non-Repetitive Peak Reverse Surge Current (See Fig.1 for the exponents.) IRSM 50 A Peak 1-Cycle Surge Forward Current (Single Half Sine-wave, t=10ms) IFSM 700 A Junction Temperature Tj -55 175 Storage Temperature Range Tstg -40 150 Note 1 : Lead tip temperature TL=25 I RSM RSMI 0 10ms
- 7. 31 2/2 Z5W48V Revision No : 3 ZENER CURRENT I (A)Z ZENER VOLTAGE V (V)Z ZZI - V SURGE ABSORPTION CAPABILITY P (W) PULSE WIDTH t (ms)W RSM P - tRSM W TRANSIENT THERMAL RESISTANCE R ( C) TIME t (S) th R - tth INSTANEOUSFORWARD CURRENT I (A)F INSTANTANEOUS FORWARD VOLTAGE V (V) I - VF F F Typical DESIGN RECOMMENDED REGION tW RSMP Rectangular Pulse Rth(j-a) Rth(j-D) th(j-D)R : Transient Thermal Resistance between junction and anode electrode. 46 47 48 50 51 52 53 49 0.1 100 0.1 100 0.1 101 100 0.001 10 0.10.01 100 1 1K 0.01 0.1 100 jT =150 C
100 C 25 C
P - T , Ta LLEAD TEMPERATURE T , AMBIENT TEMPERATURE Ta ( C) 05 0 100 150 200 ALLOWABLE POWER DISSIPATION P (W) L T -PL Ta-P Size Glass/epoxy substrate Solder round a Substrate Size b Thickness c 10mm 50mm 1.5mm a b C TL