Z5W27VC KEC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
Best suited for overvoltage protection of electronic system: Electronic system for use in automobiles Electronic system for commercial use Electronic system for industrial use For communications, controls, measuring instruments, etc.
FEATURES
- Excellent clamp voltage characteristics that protect electronic system from any kind of surge
- High surge power withstanding capabilities that absorb load dump surge
- Excellent surge responsibility for steep surge absorption
- Surface mount type is available for easy applications
- Corresponds to taping packages.
- Automotive AEC Q101 Qualified
- MSL Level 1 guaranteed ( Tpeak=260℃) MAXIMUM RATINGS (Ta=25℃) CHARACTERISTIC Symbol Rating Unit Allowable Power Dissipation(Note 1) P 5 W Peak Pulse Power Dissipation with 10/1,000㎲ wave form PPPM 3,600 W Peak Pulse Power Dissipation with 10/10,000㎲ wave form PPPM 3,200 W Non-Repetitive Peak Reverse Surge Current (See Fig1 for the exponents) IRSM 70 A Junction Temperature TJ -55~175 ℃ Storage Temperature Range TSTG -55~175 ℃ Fig1 CHARACTERISTIC Symbol Test Condition MIN TYP MAX Unit Zener Voltage Vz Iz=10㎃ 24 27 30 V Operating Resistance rd Iz=10㎃ - - 30 Ω Temperature Coefficient αT Iz=10㎃ - 23 36 ㎷/℃ Forward Voltage VF IF=6A - - 1.0 V IF=100A - - 1.2 Reverse Current IR VR=22V - - 10 ㎂ Clamping Voltage VC IRSM=55A - - 40 V ELECTRICAL CHARACTERISTICS (Ta=25℃) DO-218
2015.10.15 Revision No: O
Note 1 : Lead tip temperature TL = 25℃.
LEAD TEMPERATURE TL , AMBIENT TEMPERATURE Ta (℃) ALLOWABLE POWER DISSIPATION (W) P - TL , Ta 105 0.1 1 10 100 104 103 102 101 Rectangular Pulse P tW 1,000 TA = 25℃ Pulse Width (td) is defined as the point where the peak current decays to 50% of IPP td PULSE WIDTH tW (ms) SURGE ABSORPTION CAPABILITY P RSM (W) PRSM - tW Typical Ta=25℃ 26 27 28 29 30 31 32 105 104 103 102 101 IZ - VZ Pulse Waveform Reverse Power Capability 10 20 30 40 0 150 100 Peak Value IPP Half Value IPP tr = 10µS ZENER CURRENT IZ (mA) Input Peak Pulse Current% Reverse Surge Power (W) 50 100 150 200 0 TL-P Ta-P Size Glass/Epoxy Substrate Solder round a 10mm Substrate Size b 50mm Thickness c 1.5mm Z5W27VC ZENER DIODE SILICON DIFFUSED-JUNCTION TYPE SEMICONDUCTOR TECHNICAL DATA PULSE WIDTH tW (ms) ZENER VOLTAGE VZ (V) PULSE WIDTH tW (ms) – 1/2 IPP Exponential Waveform 10,000 100 DESIGN RECOMMENDED REGION
Rth(j-D) : Transient Thermal Resistance between junction And anode electrode Rth(j-a) Rth(j-D) 1m 10 1 100 1000 0.01 10m 100m 0.1 1.0 100 Typical Ta=25℃ 0.1 100 Rth - t IF - VF Z5W27VC ZENER DIODE SILICON DIFFUSED-JUNCTION TYPE SEMICONDUCTOR TECHNICAL DATA TIMT t (S) FORWARD VOLTAGE VF (V)