YFW90N02AD YFWDIODE | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 5
Technical content
www.yfwdiode.com 20V N- CHANNEL ENHANCEMENT MODE MAIN CHARACTERISTICS I D V DSS R DSON -typ(@V GS =4.5V) ＜3.5 Application Battery protection Load switch Uninterruptible power supply Product Specification Classification Part Number YFW90N02AD Maximum Ratings at Tc =25°C unless otherwise specified Characteristics Drain-Source Voltage Gate - Source Voltage Continuous Drain Current, V GS @ 10V C =25℃ Continuous Drain Current, V GS @ 10V C =100 Pulsed Drain Current note1 Single Pulse Avalanche Energy note2 Power Dissipation Thermal Resistance Junction to Case Operating and Storage Temperature Range GuangDong CHANNEL ENHANCEMENT MODE MOSFET 90A 20V mΩ(Type:2.8 mΩ) Product Specification Classification Package Marking TO-252 YFW 90N02AD XXXXX =25°C unless otherwise specified Symbols Value V DS V GS I D I D I DM 360 E AS 110 P D R θJC 1.85 T J STG 55 to +1 YFW90N02AD GuangDong YFW Electronics Co, Ltd. TO-252 Pack 2500PCS/Tape Value Units V V A A 360 A 110 mJ W 1.85 °C/W 55 to +1 Rev:2021Y1
www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. Maximum Ratings at Tc=25°C unless otherwise specified Characteristics Test Condition Symbols Min Typ Max Units Drain-Source Breakdown Voltage V GS =0V, I D =250uA V(BR)DSS 20 22 - V Zero Gate Voltage Drain Current V DS =20V, V GS =0V I DSS - - 1 μA Gate - Body Leakage Current V GS =±12V, V DS =0V I GSS - - ±100 nA Gate -Threshold Voltage V DS GS , I D =250uA V GS(th) 0.5 0.68 1.0 V Static Drain-Source on-Resistance note3 V GS =4.5V, I D =30A R DS(ON) - 2.8 3.5 mΩ V GS =2.5V, I D =20A - 4 6 Input Capacitance V DS =10V V GS =0V f=1.0MHz C iss - 3200 - P F Output Capacitance C oss - 460 - Reverse Transfer Capacitance C rss - 445 - Total Gate Charge V DS =10V I D =30A V GS =4.5V Q g - 48 - nC Gate-Source Charge Q gs - 3.6 - Gate-Drain(“Miller”) Charge Q gd - 19 - Turn-on delay time V DS =10V I D = 30A R GEN = 1.8Ω V GS =4.5V t D(on) - 9.7 - ns Turn-on Rise Time T r - 37 - Turn-Off Delay Time t d(OFF) - 63 - Turn- Off Fall Time t f - 52 - Maximum Continuous Drain to Source Diode Forward Current I S - - 90 A Maximum Pulsed Drain to Source Diode Forward Current I SM - - 360 A Drain to Source Diode Forward Voltage V GS =0V, I SD =30A, T J =25℃ V SD - - 1.2 V Reverse Recovery Time T J =25°C, IF=30A, di/dt =100A/μs t rr - 23 - ns Reverse Recovery Charge Q rr - 10 - nC Note : 1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2、The data tested by pulsed , pulse width .The EAS data shows Max. rating . 3、The EAS condition: TJ=25℃, VDD=15V, VG=4.5V, RG=25Ω, L=0.5mH, IAS=21A 4、The power dissipation is limited by 175℃ junction temperature 5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. Rev:2021Y1
www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. Package Outline Dimensions Millimeters TO-252 Dim. Min. Typ. Max. A 2.10 - 2.50 A2 0 - 0.10 B 0.66 - 0.86 B2 5.18 - 5.48 C 0.40 - 0.60 C2 0.44 - 0.58 D 5.90 - 6.30 D1 5.30REF E 6.40 - 6.80 E1 4.63 - - G 4.47 - 4.67 H 9.50 - 10.70 L 1.09 - 1.21 L2 1.35 - 1.65 V1 - 7° - V2 0° - 6° All Dimensions in millimeter Rev:2021Y1Rev:2021Y1