YFW8H06S

YFW8H06S YFWDIODE | Alldatasheet

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www.yfwdiode.com 60V N+N- CHANNEL ENHANCEMENT MODE MAIN CHARACTERISTICS I D V DSS R DSON -typ(@V GS =10V) ＜32m Ω Application Battery protection Load switch Uninterruptible power supply Product Specification Classification Part Number YFW8H06S Maximum Ratings at Tc =25°C unless otherwise specified Characteristics Drain-Source Voltage Gate - Source Voltage Continuous Drain Current, V GS @ 10V A =25℃ Continuous Drain Current, V GS @ 10V A =70℃ Pulsed Drain Current Single Pulse Avalanche Energy Avalanche Current Total Power Dissipation A =25℃ Storage Temperature Range Operating Junction Temperature Range Thermal Resistance Junction-Ambient Thermal Resistance Junction-Case GuangDong CHANNEL ENHANCEMENT MODE MOSFET 60V Ω(Type:23 mΩ) Product Specification Classification Package Marking SOP-8 YFW 8H06S XXXXX =25°C unless otherwise specified Symbols Value VDS VGS I D 8.2 I D 5.8 I DM 16.6 E AS 28.5 I AS 22.6 P D 1.5 T STG 55 to +150 T J 55 to +150 R θJA R θJC YFW8H06S GuangDong YFW Electronics Co, Ltd. SOP-8 Pack 3000PCS/Tape Value Units V V 8.2 A 5.8 A 16.6 A 28.5 mJ 22.6 A 1.5 W 55 to +150 55 to +150 °C/W °C/W Rev:2021Y1

www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. Maximum Ratings at Tc=25°C unless otherwise specified Characteristics Test Condition Symbols Min Typ Max Units Drain-Source Breakdown Voltage V GS =0V, I D =250uA B VDSS 60 66 - V BVDSS Temperature Coefficient Reference to 25℃ , I D =1mA △BV DSS/△TJ - 0.063 - V/℃ Static Drain-Source On-Resistance V GS =10V, I D =8A R DS(ON) - 23 32 mΩ V GS =4.5V, I D =6A - 28 38 Gate Threshold Voltage V DS GS , I D =250uA V GS(th) 1.2 1.6 2.5 V V GS(th) Temperature Coefficient GS(th) - -5.24 - mV/℃ Drain-Source Leakage Current V DS =48V, V GS =0V T J =25℃ I DSS - - 1 uA V DS =48V , V GS =0V , T J =55℃ - - 5 Gate-Source Leakage Current V GS =±20V, V DS =0V I GSS - - ±100 nA Forward Transcond uctance V DS = 5V, I D = 4A g fs - 21 - S Gate Resistance V DS =0V , V GS =0V , f=1MHz R g 3.2 6.4 Ω Total Gate Charge（4.5V） V DS =48V V GS =4.5V I D =4A Q g - 12.6 - nC Gate-Source Charge Q gs - 3.2 - Gate-Drain Charge Q gd - 6.3 - Turn-on delay time V DD =30V V GS =10V R G = 3.3Ω I D = 4A t d(on) - 8 - ns Rise Time T r - 14.2 - Turn-Off Delay Time t d(OFF) - 24.4 - Fall Time t f - 4.6 - Input Capacitance V DS =15V V GS =0V f=1.0MHz C iss - 1378 - P F Output Capacitance C oss - 86 - Reverse Transfer Capacitance C rss - 64 - Continuous Source Current 1,5 V G D =0V , Force Current I S - - 4.8 A Pulsed Source Current 2,5 I SM - - 9.6 A Diode Forward Voltage V GS =0V , I S =1A , T J =25℃ V SD - 0.746 1.2 V Note : 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is V DD =25V,V GS =10V,L=0.1mH,I AS =22.6A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation. Rev:2021Y1

www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. Ratings and Characteristic Curves 0 0.5 1 1.5 2 VDS , Drain-to-Source Voltage (V) ID Drain Current (A) VGS=10V VGS=7 V GS =5V VGS=4.5V VGS=3V 2 4 6 8 10 VGS (V) RDSON (mΩ) ID=8A 0.2 0.4 0.6 0.8 1 VSD , Source-to-Drain Voltage (V) IS Source Current(A) TJ=150℃ TJ=25℃ 0 5 10 15 20 25 QG , Total Gate Charge (nC) VGS Gate to Source Voltage (V) ID=4A 0.5 1.5 -50 0 50 100 150 TJ ,Junction Temperature (℃) Normalized VGS(th) 0.5 1.0 1.5 2.0 2.5 -50 0 50 100 150 TJ , Junction Temperature (℃) Normalized On Resistance Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance v.s Gate-Source Voltage Fig.3 Forward Characteristics of Reverse diode Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) v.s TJ Fig.6 Normalized RDSON v.s TJ Rev:2021Y1

www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. Ratings and Characteristic Curves 100 1000 10000 1 5 9 13 17 21 25VDS Drain to Source Voltage(V) Capacitance (pF) F=1.0MHz Ciss Coss Crss 0.01 0.10 1.00 10.00 0.01 0.1 1 10 100 VDS (V) ID (A) TA=25oC Single Pulse 100ms 100us 1ms 10ms DC 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (RθJA) 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PDM D = TON/T TJpeak = TC+PDMXRθJC TON T Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% IAS VGS BVDSS VDD EAS=

2 L x IAS

Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Waveform Rev:2021Y1

www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. Package Outline Dimensions Millimeters Rev:2021Y1