YFW80N04AD-L YFWDIODE | Alldatasheet
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www.yfwdiode.com 40V N- CHANNEL ENHANCEMENT MODE MAIN CHARACTERISTICS I D V DSS R DSON -typ(@V GS =10V) ＜9. Application Battery protection Load switch Uninterruptible power supply Product Specification Classification Part Number YFW80N04AD-L Maximum Ratings at Tc =25°C unless otherwise specified Characteristics Drain-Source Voltage Gate - Source Voltage Continuous Drain Current, V GS @ 10V C =25 Continuous Drain Current, V GS @ 10V C =100 Pulsed Drain Current Single Pulse Avalanche Energy Avalanche Current Total Power Dissipation C =25℃ Total Power Dissipation A =25℃ Storage Temperature Range Operating Junction Temperature Range Thermal Resistance Junction-Ambient Thermal Resistance Junction-Case GuangDong CHANNEL ENHANCEMENT MODE MOSFET 80A 40V mΩ(Type:7.7mΩ) Product Specification Classification Package Marking TO-252 YFW 80N04AD-L XXXXX =25°C unless otherwise specified Symbols Value V DS V GS I D I D I DM 200 E AS I AS P D 33.7 P D T STG 55 to +1 T J 55 to +1 R θJA R θJC 2.1 YFW80N04AD-L GuangDong YFW Electronics Co, Ltd. TO-252 Pack 2500PCS/Tape Value Units V V A A 200 A mJ A 33.7 W W 55 to +1 55 to +1 °C/W 2.1 °C/W Rev:2021Y1
www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. Maximum Ratings at Tc=25°C unless otherwise specified Characteristics Test Condition Symbols Min Typ Max Units Drain-Source Breakdown Voltage V GS =0V, I D =250uA BV DSS 40 - - V BVDSS Temperature Coefficient Reference to 25℃ , I D =1mA △BV DSS/△TJ - 0.028 - V/°C Static Drain-Source On-Resistance V GS =10V, I D =30A R DS(ON) - 7.7 9.0 mΩ V GS =4.5V, I D =15A - 9.4 12 Gate -Threshold Voltage V DS GS , I D =250uA V GS(th) 1.2 1.6 2.5 V V GS (th) Temperature Coefficient GS(th) - -6.16 - mV/°C Drain -Source Leakage Current V DS =40V , V GS =0V , T J =25℃ I DSS - - 1 μA V DS =40V , V GS =0V , T J =55℃ - - 5 Gate-Source Leakage Current V GS =±20V, V DS =0V I GSS - - ±100 nA Forward Transconductance V DS =5V, I D =30A g FS - 22 - S Gate Resistance V DS =0V , V GS =0V , f=1MHz R g - 1.7 3.4 Ω Total Gate Charge(4.5V) V DS =20V V GS =10V I D =25A Q g - 37 - nC Gate-Source Charge Q gs - 6 - Gate-Drain Charge Q gd - 7 - Turn-on delay time V DD =30V V GS =10V R G =1Ω I D =25A t d(on) - 12 - ns Rise Time T r - 12 - Turn-Off Delay Time t d(OFF) - 38 - Fall Time t f - 9 - Input Capacitance V DS =20V V GS =0V f=1.0MHz C iss - 2400 - P F Output Capacitance C oss - 192 - Reverse Transfer Capacitance C rss - 165 - Continuous Source Current 1,5 V G D =0V , Force Current I S - - 50 A Pulsed Source Current 2,5 I SM - - 200 A Diode Forward Voltage V GS =0V , I S =1A , T J =25℃ V SD - - 1.2 V Reverse Recovery Time I F =30A , dI/dt=100A/µs , T J =25℃ t rr - 22 - ns Reverse Recovery Charge Q rr - 11 - nC Note : 1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3、The EAS data shows Max. rating . The test condition is VDD=36V,VGS =10V,L=0.1mH,IAS =16A 4、The power dissipation is limited by 150℃ junction temperature 5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation Rev:2021Y1
www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. Package Outline Dimensions Millimeters TO-252 Dim. Min. Typ. Max. A 2.10 - 2.50 A2 0 - 0.10 B 0.66 - 0.86 B2 5.18 - 5.48 C 0.40 - 0.60 C2 0.44 - 0.58 D 5.90 - 6.30 D1 5.30REF E 6.40 - 6.80 E1 4.63 - - G 4.47 - 4.67 H 9.50 - 10.70 L 1.09 - 1.21 L2 1.35 - 1.65 V1 - 7° - V2 0° - 6° All Dimensions in millimeter Rev:2021Y1