YFW80G03NF YFWDIODE | Alldatasheet

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www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. 30V N+P-CHANNEL ENHANCEMENT MODE MOSFET MAIN CHARACTERISTICS I D 80A V DSS 30V R DSON -typ(@V GS =10V) ＜6.5mΩ(Type:4.5 mΩ) I D -72A V DSS -30V R DSON -typ(@V GS =-10V) ＜8.0mΩ(Type:6.2 mΩ) Application Wireless charging Boost driver Brushless motor PDFN5*6-8L Product Specification Classification Part Number Package Marking Pack YFW80G03NF PDFN5*6-8L YFW 80G03NF XXXXX 5000PCS/Tape Maximum Ratings at Tc=25°C unless otherwise specified Characteristics Symbols Value Units N-Ch P-Ch Drain-Source Voltage V DS 30 -30 V Gate - Source Voltage V GS ±20 ±20 V Continuous Drain Current, V GS @ 10V C =25℃ I D 80 -72 A Continuous Drain Current, V GS @ 10V C =100℃ I D 52.5 -57.5 A Pulsed Drain Current I DM 243 -210 A Single Pulse Avalanche Energy E AS 389 478 mJ Avalanche Current I AS 80 72 A Total Power Dissipation C =25℃ P D 46 41.3 W Storage Temperature Range T STG -55 to +150 Operating Junction Temperature Range T J -55 to +150 Thermal Resistance Junction-Ambient R θJA °C/W Thermal Resistance Junction-Case R θJC 1.3 °C/W Rev:2021Y1

www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. N-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Characteristics Test Condition Symbols Min Typ Max Units Drain-Source Breakdown Voltage V GS =0V, I D =250uA V(BR)DSS 30 32 - V Zero Gate Voltage Drain Current V DS =30V, V GS =0V I DSS - - 1.0 uA Gate to Body Leakage Current V GS =±20V, V DS =0V I GSS - - ±100 nA Gate -Threshold Voltage V DS GS , I D =250uA V GS(th) 1.0 1.6 2.5 V Static Drain-Source On-Resistance V GS =10V, I D =30A R DS(ON) - 4.5 6.5 mΩ V GS =4.5V, I D =20A - 6.1 8.5 Input Capacitance V DS =15V V GS =0V f=1.0MHz C iss - 1614 - P F Output Capacitance C oss - 245 - Reverse Transfer Capacitance C rss - 215 - Total Gate Charge V DS =15V V GS =10V I D =30A Q g - 33.7 - nC Gate-Source Charge Q gs - 8.5 - Gate-Drain(“Miller”) Charge Q gd - 7.5 - Turn-on delay Time V DS =15V I D =30A R GEN = 3Ω V GS =10V t d(on) - 7.5 - ns Turn-on Rise Time T r - 14.5 - Turn-Off Delay Time t d(OFF) - 35.2 - Turn-Off Fall Time t f - 9.6 - Maximum Continuous Drain to Source Diode Forward Current I S - - 70 A Maximum Pulsed Drain to Source Diode Forward Current I SM - 280 A Drain to Source Diode Forward Voltage V GS =0V , I S =30A V SD - - 1.2 V Note : 1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3、The EAS data shows Max. rating . The test condition is VDD=24V,VGS=10V,L=0.1mH,IAS=80A 4、The power dissipation is limited by 175℃ junction temperature 5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. Rev:2021Y1

www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. P-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Characteristics Test Condition Symbols Min Typ Max Units Drain-Source Breakdown Voltage V GS =0V, I D =-250uA BV DSS -30 - - V Static Drain-Source On-Resistance V GS =-10V, I D =-30A R DS(ON) - 6.2 8.0 mΩ V GS =-4.5V, I D =-15A - 11 13 Gate Threshold Voltage V DS GS , I D =-250uA V GS(th) -1.2 -1.6 -2.5 V Drain-Source Leakage Current V DS =-24V, V GS =0V T J =25℃ I DSS - - -1 uA V DS =-24V , V GS =0V , T J =55℃ - - -5 Gate-Source Leakage Current V GS =±20V, V DS =0V I GSS - - ±100 nA Forward Transconductance V DS = -5V, I D =- 30A g fs - 25 - S Total Gate Charge(-4.5V) V DS =-15V V GS =-4.5V I D =-15A Q g - 30 - nC Gate-Source Charge Q gs - 10 - Gate-Drain Charge Q gd - 10.4 - Turn-on delay time V DD =-15V V GS =-10V R G = 3.3Ω I D =-15A t d(on) - 9.4 - ns Rise Time T r - 10.2 - Turn-Off Delay Time t d(OFF) - 117 - Fall Time t f - 24 - Input Capacitance V DS =-15V V GS =0V f=1MHz C iss - 3448 - P F Output Capacitance C oss - 508 - Reverse Transfer Capacitance C rss - 421 - Continuous Source Current 1.5 V G D =0V , Force Current I S - - -50 A Pulsed Source Current I SM - - -130 A Diode Forward Voltage V GS =0V , I S =-1A , T J =25℃ V SD - - -1 A Reverse Recovery Time IF=-15A , dI/dt=100A/µs , T J =25℃ t rr - 20 - nS Reverse Recovery Charge Q rr - 9.5 - nC Note : 1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2、The data tested by pulsed , pulse width .The EAS data shows Max. rating . 3、The power dissipation is limited by 175℃ junction temperature 4、EAS condition: TJ=25℃, VDD= -24V, VG= -10V, RG=7Ω, L=0.1mH, IAS= -72A 5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. Rev:2021Y1

www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. Ratings and Characteristic Curves P-Typical Characteristics Rev:2021Y1

www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. Ratings and Characteristic Curves Rev:2021Y1

PDFN5*6-8L YFW80G03NF www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. Package Outline Dimensions Millimeters Symbol Common mm Inch Mim Max Min Max A 1.03 1.17 0.0406 0.0461 b 0.34 0.48 0.0134 0.0189 c 0.824 0.0970 0.0324 0.082 D 4.80 5.40 0.1890 0.2126 D1 4.11 4.31 0.1618 0.1697 D2 4.80 5.00 0.1890 0.1969 E 5.95 6.15 0.2343 0.2421 E1 5.65 5.85 0.2224 0.2303 E2 1.60 / 0.0630 / e 1.27 BSC 0.05 BSC L 0.05 0.25 0.0020 0.0098 L1 0.38 0.50 0.0150 0.0197 L2 0.38 0.50 0.0150 0.0197 H 3.30 3.50 0.1299 0.1378 I / 0.18 / 0.0070 Rev:2021Y1