YFW60N02AD YFWDIODE | Alldatasheet
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www.yfwdiode.com 20V N- CHANNEL ENHANCEMENT MODE MAIN CHARACTERISTICS I D V DSS R DSON -typ(@V GS =4.5V) ＜5.5 Application Battery protection Load switch Uninterruptible power supply Product Specification Classification Part Number YFW60N02AD Maximum Ratings at Tc =25°C unless otherwise specified Characteristics Drain-Source Voltage Gate - Source Voltage Continuous Drain Current, V GS @ 4.5V A =25℃ Continuous Drain Current, V GS @ 4.5V @T A =70℃ Pulsed Drain Current note1 Single Pulse Avalanche Energy note2 Power Dissipation @T A =25℃ Thermal Resistance Junction to Case Operating and Storage Temperature Range GuangDong CHANNEL ENHANCEMENT MODE MOSFET 60A 20V mΩ(Type:4.1 mΩ) Specification Classification Package Marking TO-252 YFW 60N02AD XXX X =25°C unless otherwise specified Symbols Value V DS V GS I D I D I DM E AS 56.2 P D R θJC 2.63 T J STG 55 to +1 YFW60N02AD GuangDong YFW Electronics Co, Ltd. TO-252 Pack X X 2500PCS/Tape Value Units V V A A A 56.2 mJ W 2.63 °C/W 55 to +1 Rev:2021Y1
www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. Maximum Ratings at Tc=25°C unless otherwise specified Characteristics Test Condition Symbols Min Typ Max Units Drain-Source Breakdown Voltage V GS =0V, I D =250uA V(BR)DSS 20 24 - V Zero Gate Voltage Drain Current V DS =20V, V GS =0V I DSS - - 1.0 μA Gate - Body Leakage Current V GS =±12V, V DS =0V I GSS - - ±100 nA Gate Threshold Voltage V DS GS , I D =250uA V GS(th) 0.5 0.7 1.2 V Static Drain-Source on-Resistance note3 V GS =4.5V, I D =30A R DS(ON) - 4.1 5.5 mΩ V GS =2.5V, I D =20A - 7.4 9.0 Input Capacitance V DS =10V V GS =0V f=1.0MHz C iss - 2500 - P F Output Capacitance C oss - 407 - Reverse Transfer Capacitance C rss - 386 - Total Gate Charge V DS =10V I D =30A V GS =4.5V Q g - 32 - nC Gate-Source Charge Q gs - 3 - Gate-Drain(“Miller”) Charge Q gd - 11 - Turn-on delay time V DS =10V I D = 30A R GEN = 3Ω V GS =4.5V t D(on) - 17 - ns Turn-on Rise Time T r - 49 - Turn-Off Delay Time t d(OFF) - 74 - Turn- Off Fall Time t f - 26 - Maximum Continuous Drain to Source Diode Forward Current I S - - 75 A Maximum Pulsed Drain to Source Diode Forward Current I SM - - 300 A Drain to Source Diode Forward Voltage V GS =0V , I S =30A V SD - - 1.2 V Notes: 1、Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2、The test condition is, VDD=10V, VG=4.5V, L=0.5mH, RG=25Ω, IAS=15A 3、The data tested by pulsed Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5% 4、The power dissipation is limited by 150℃ junction temperature Rev:2021Y1
www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. Package Outline Dimensions Millimeters TO-252 Dim. Min. Typ. Max. A 2.10 - 2.50 A2 0 - 0.10 B 0.66 - 0.86 B2 5.18 - 5.48 C 0.40 - 0.60 C2 0.44 - 0.58 D 5.90 - 6.30 D1 5.30REF E 6.40 - 6.80 E1 4.63 - - G 4.47 - 4.67 H 9.50 - 10.70 L 1.09 - 1.21 L2 1.35 - 1.65 V1 - 7° - V2 0° - 6° All Dimensions in millimeter Rev:2021Y1