YFW4G02LI YFWDIODE | Alldatasheet

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www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. 20V N+P-CHANNEL ENHANCEMENT MODE MOSFET MAIN CHARACTERISTICS I D 4.5A V DSS 20V R DSON -typ(@V GS =4.5V) ＜35mΩ(Type:28 mΩ) I D -3.8A V DSS -20V R DSON -typ(@V GS =-4.5V) ＜80mΩ(Type:55 mΩ) Application BLDC SOT23-6L Product Specification Classification Part Number Package Marking Pack YFW4G02LI SOT23-6L YFW 4G02LI 3000PCS/Tape Maximum Ratings at Tc=25°C unless otherwise specified Characteristics Symbols Value Units N-Ch P-Ch Drain-Source Voltage V DS 20 -20 V Gate - Source Voltage V GS ±20 ±20 V Continuous Drain Current, V GS @ 10V A =25℃ I D 4.5 -3.8 A Continuous Drain Current, V GS @ 10V A =70℃ I D 3.0 -2.5 A Pulsed Drain Current I DM 52 -40 A Single Pulse Avalanche Energy E AS 12 18 mJ Total Power Dissipation A =25℃ P D 1.5 1.5 W Storage Temperature Range T STG -55 to +150 Operating Junction Temperature Range T J -55 to +150 Thermal Resistance Junction-Ambient R θJA 105 °C/W Thermal Resistance Junction-Case R θJC °C/W Rev:2021Y1

www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. N-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Characteristics Test Condition Symbols Min Typ Max Units Drain-Source Breakdown Voltage V GS =0V, I D =250uA BV DSS 20 22 - V Static Drain-Source On-Resistance V GS =4.5V, I D =3A R DS(ON) - 28 35 mΩ V GS =2.5V, I D =2A - 32 40 mΩ Gate Threshold Voltage V DS GS , I D =250uA V GS(th) 0.5 0.75 1.2 V Drain-Source Leakage Current V DS 16V, V GS =0V T J =25℃ I DSS - - 1 uA V DS =16V , V GS =0V , T J =55℃ - - 5 Gate-Source Leakage Current V GS =±12V, V DS =0V I GSS - - ±100 nA Forward Transconductance V DS = 5V, I D = 3A g fs - 10.5 - S Total Gate Charge(4.5V) V DS =15V V GS =4.5V I D =3A Q g - 4.6 - nC Gate-Source Charge Q gs - 0.7 - Gate-Drain Charge Q gd - 1.5 - Turn-on delay time V DD =10V V GS =4.5V R G = 3.3Ω I D = 3A t d(on) - 1.6 - ns Rise Time T r - 42 - Turn-Off Delay Time t d(OFF) - 14 - Fall Time t f - 7 - Input Capacitance V DS =15V V GS =0V f=1MHz C iss - 310 - P F Output Capacitance C oss - 49 - Reverse Transfer Capacitance C rss - 35 - Continuous Source Current 1,4 V G D =0V , Force Current I S - - 3.6 A Diode Forward Voltage V GS =0V , I S =1A , T J =25℃ V SD - - 1.2 V Note : 1、The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3、The power dissipation is limited by 150℃ junction temperature 4、The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation. Rev:2021Y1

www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. P-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Characteristics Test Condition Symbols Min Typ Max Units Drain-Source Breakdown Voltage V GS =0V, I D =-250uA BV DSS -20 -22 - V Static Drain-Source On-Resistance V GS =-4.5V, I D =-3A R DS(ON) - 55 80 mΩ V GS =-2.5V, I D =-2A - 75 100 mΩ Gate -Threshold Voltage V DS GS , I D =-250uA V GS(th) -0.45 -0.6 -1.0 V Drain-Source Leakage Current V DS =-20V, V GS =0V T J =25℃ I DSS - - -1 uA V DS =-20V , V GS =0V , T J =55℃ - - -5 Gate-Source Leakage Current V GS =±12V, V DS =0V I GSS - - ±100 nA Forward Transconductance V DS = -5V, I D =- 3A g fs - 12.2 - S Total Gate Charge(-4.5V) V DS =-15V V GS =-4.5V I D =-3A Q g - 10.1 - nC Gate-Source Charge Q gs - 1.21 - Gate-Drain Charge Q gd - 2.46 - Turn-on delay time V DD =-10V V GS =-4.5V R G = 3.3Ω I D =-3A t d(on) - 5.6 - ns Rise Time T r - 32.2 - Turn-Off Delay Time t d(OFF) - 45.6 - Fall Time t f - 29.2 - Input Capacitance V DS =-15V V GS =0V f=1MHz C iss - 677 - P F Output Capacitance C oss - 82 - Reverse Transfer Capacitance C rss - 73 - Continuous Source Current 1,4 V G D =0V , Force Current I S - - -3 A Diode Forward Voltage V GS =0V , I S =-1A , T J =25℃ V SD - - -1 V Note : 1、The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3、The power dissipation is limited by 150℃ junction temperature 4、The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation. Rev:2021Y1

www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. Ratings and Characteristic Curves N-Channel Typical Characteristics Rev:2021Y1

www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. Ratings and Characteristic Curves Rev:2021Y1

www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. Ratings and Characteristic Curves P-Channel Typical Characteristics Rev:2021Y1

www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. Ratings and Characteristic Curves Rev:2021Y1

www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. Package Outline Dimensions Millimeters Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 1.050 1.250 0.041 0.049 A1 0.000 0.100 0.000 0.004 A2 1.050 1.150 0.041 0.045 b 0.300 0.500 0.012 0.020 C 0.100 0.200 0.004 0.008 D 2.820 3.020 0.111 0.119 E 1.500 1.700 0.059 0.067 E1 2.650 2.950 0.104 0.116 e 0.950（BSC） 0.037(BSC) e1 1.800 2.000 0.071 0.079 L 0.300 0.600 0.012 0.024 θ 0 8 0 8 Rev:2021Y1