YFW3404MI YFWDIODE | Alldatasheet
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www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. 30V N-CHANNEL ENHANCEMENT MODE MOSFET MAIN CHARACTERISTICS I D 8.0A V DSS 30V R DSON -typ(@V GS =10V) ＜20mΩ(Type:15 mΩ) Application Lithium battery protection Wireless impact Mobile phone fast charging SOT23-3L Product Specification Classification Part Number Package Marking Pack YFW3404MI SOT23-3L 3404 3000PCS/Tape Maximum Ratings at Tc=25°C unless otherwise specified Characteristics Symbols Value Units Drain-Source Voltage V DS V Gate - Source Voltage V GS ±20 V Continuous Drain Current A =25℃ I D A Continuous Drain Current A =70℃ I D 4.9 A Pulsed Drain Current I DM A Total Power Dissipation A =25℃ P D W Storage Temperature Range T STG -55 to +150 Operating Junction Temperature Range T J -55 to +150 Thermal Resistance Junction-ambient R θJA 125 °C/W Thermal Resistance Junction-Ambient 1 (t ≤10s) R θJA °C/W Rev:2021Y1
www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. Maximum Ratings at Tc=25°C unless otherwise specified Characteristics Test Condition Symbols Min Typ Max Units Drain-Source Breakdown Voltage V GS =0V, I D =250uA BV DSS 30 32 - V BVDSS Temperature Coefficient Reference to 25℃ , I D =1mA △BV DSS/△TJ - 0.029 - V/°C Static Drain-Source On-Resistance V GS =10V, I D =5.8A R DS(ON) - 15 20 mΩ V GS =4.5V, I D =5A - 25 32 Gate -Threshold Voltage V DS GS , I D =250uA V GS(th) 1.2 1.6 2.5 V V GS (th) Temperature Coefficient GS(th) - -2.82 - mV/°C Drain-Source Leakage Current V DS =24V , V GS =0V , T J =25℃ I DSS - - 1 μA V DS =24V , V GS =0V , T J =55℃ - - 5 Gate –Source Leakage Current V GS =±12V, V DS =0V I GSS - - ±100 nA Forward Transconductance V DS =5V , I D =5A g fs - 25 - S Gate Resistance V DS =0V , V GS =0V , f=1MHz R g - 1.5 - Ω Total Gate Charge(4.5V) V DS =15V V GS =4.5V I D =5.8A Q g - 11.5 - nC Gate-Source Charge Q gs - 1.6 - Gate-Drain Charge Q gd - 2.9 - Turn-on delay time V DD =15V V GS =10V R G =3Ω I D = 5A t d(on) - 5 - ns Rise Time T r - 47 - Turn-Off Delay Time t d(OFF) - 26 - Fall Time t f - 8 - Input Capacitance V DS =15V V GS =0V f=1.0MHz C iss - 860 - P F Output Capacitance C oss - 84 - Reverse Transfer Capacitance C rss - 70 - Continuous Source Current 1,4 V G D =0V , Force Current I S - - 5.8 A Diode Forward Voltage V GS =0V , I S =1A , T J =25℃ V SD - - 1.2 V Note : 1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3、The power dissipation is limited by 150℃ junction temperature 4、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. Rev:2021Y1
www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. Ratings and Characteristic Curves Typical Characteristics -50 0 50 100 150 -50 0 50 100 150 TJ ,Junction Temperature (℃ ) TJ , Junction Temperature (℃) Rev:2021Y1
www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. Ratings and Characteristic Curves Fig. Normalized V GS th v s T J Fig. Normalized R DSON v s T J Rev:2021Y1
www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. Package Outline Dimensions Millimeters Symbol Dimensions in Millimeters MIN. MAX. A 0.900 1.150 A1 0.000 0.100 A2 0.900 1.050 b 0.300 0.500 c 0.080 0.150 D 2.800 3.000 E 1.200 1.400 E1 2.250 2.550 e 0.950TYP e1 1.800 2.000 L 0.550REF L1 0.300 0.500 θ 0° 8° Rev:2021Y1