YFW30N02AD YFWDIODE | Alldatasheet
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www.yfwdiode.com 20V N- CHANNEL ENHANCEMENT MODE MAIN CHARACTERISTICS I D V DSS R DSON -typ(@V GS =4.5V) ＜15 Application Solar road lights Load switch Uninterruptible power supply Product Specification Classification Part Number YFW30N02AD Maximum Ratings at Tc =25°C unless otherwise specified Characteristics Drain-Source Voltage Gate - Source Voltage Continuous Drain Current, V GS @ 10V C =25℃ Continuous Drain Current, V GS @ 10V C =100℃ Continuous Drain Current, V GS @ 10V A =25℃ Continuous Drain Current, V GS @ 10V A =70℃ Pulsed Drain Current Single Pulse Avalanche Energy Avalanche Current Total Power Dissipation C =25℃ Total Power Dissipation A =25℃ Storage Temperature Range Operating Junction Temperature Range Thermal Resistance Junction-Ambient Thermal Resistance Junction-Case GuangDong CHANNEL ENHANCEMENT MODE MOSFET 30A 20V mΩ(Type:11 mΩ) Product Specification Classification Package Marking TO-252 YFW 30N02AD XXXXX =25°C unless otherwise specified Symbols Value V DS V GS I D I D I D 6.3 I D 5.8 I DM E AS 8.1 I AS 12.7 P D 20.8 P D T STG 55 to +150 T J 55 to +150 R θJA R θJC YFW30N02AD GuangDong YFW Electronics Co, Ltd. TO-252 Pack 2500PCS/Tape Value Units V V A A 6.3 A 5.8 A A 8.1 mJ 12.7 A 20.8 W W 55 to +150 55 to +150 °C/W °C/W Rev:2021Y1
www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. Maximum Ratings at Tc=25°C unless otherwise specified Characteristics Test Condition Symbols Min Typ Max Units Drain-Source Breakdown Voltage V GS =0V, I D =250uA BV DSS 20 22 - V BVDSS Temperature Coefficient Reference to 25℃ , I D =1mA △BV DSS/△TJ - 0.018 - V/℃ Gate -Threshold Voltage V DS GS , I D =250uA V GS(th) 0.5 0.65 1.0 V Static Drain-Source On-Resistance V GS =4.5V, I D =7.6A R DS(ON) - 11 15 mΩ V GS =2.5V, I D =3.5A - 15.5 20 V GS =1.8V, I D =2.5A - 20.5 35 Zero Gate Voltage Drain Current V DS =20V, V GS =0V I DSS - - 1 μA Gate - Body Leakage Current V GS =±10V, V DS =0V I GSS - - ±100 nA Input Capacitance V DS =10V V GS =0V f=1.0MHz C iss - 888 - P F Output Capacitance C oss - 133 - Reverse Transfer Capacitance C rss - 117 - Total Gate Charge V GS =4.5V V DS =10V I D =6.8A Q g - 11.05 - nC Gate-Source Charge Q gs - 1.73 - Gate-Drain Charge Q gd - 3.1 - Turn-on delay time V GS =4.5V V DS =10V I D = 6.8A R GEN = 3Ω t D(on) - 7 - ns Turn-on Rise Time T r - 46 - Turn-Off Delay Time t d(OFF) - 30 - Turn- Off Fall Time t f - 52 - V GS =0V , I S =7.6A V SD - - 1.2 V Note : 1、The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3、The power dissipation is limited by 150℃ junction temperature 4、The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation. Rev:2021Y1
www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. Package Outline Dimensions Millimeters Dim. Min. Typ. Max. A 2.10 - 2.50 A2 0 - 0.10 B 0.66 - 0.86 B2 5.18 - 5.48 C 0.40 - 0.60 C2 0.44 - 0.58 D 5.90 - 6.30 D1 5.30REF E 6.40 - 6.80 E1 4.63 - - G 4.47 - 4.67 H 9.50 - 10.70 L 1.09 - 1.21 L2 1.35 - 1.65 V1 - 7° - V2 0° - 6° All Dimensions in millimeter Rev:2021Y1