YFW25N04S YFWDIODE | Alldatasheet
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www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. 40V N-CHANNEL ENHANCEMENT MODE MOSFET MAIN CHARACTERISTICS I D 25A V DSS 40V R DSON -typ(@V GS =10V) ＜7mΩ(Type:5.5 mΩ) Application Battery protection Load switch Uninterruptible power supply SOP-8 Product Specification Classification Part Number Package Marking Pack YFW25N04S SOP-8 YFW 25N04S XXXXX 3000PCS/Tape Maximum Ratings at Tc=25°C unless otherwise specified Characteristics Symbols Value Units Drain-Source Voltage V DS V Gate - Source Voltage V GS ±20 V Continuous Drain Current, V GS @ 10V A =25℃ I D 25.5 A Continuous Drain Current, V GS @ 10V A =70℃ I D 18.4 A Pulsed Drain Current I DM A Single Pulse Avalanche Energy E AS 176 mJ Avalanche Current I AS A Total Power Dissipation @TA=25℃ P D 1.5 W Storage Temperature Range T STG -55 to +150 Operating Junction Temperature Range T J -55 to +150 Thermal Resistance, Junction-to-Ambient R θJA °C/W Thermal Resistance Junction-Case R θJC °C/W Rev:2021Y1
www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. Maximum Ratings at Tc=25°C unless otherwise specified Characteristics Test Condition Symbols Min Typ Max Units Drain-Source Breakdown Voltage V GS =0V, I D =250uA BV DSS 40 44 - V BVDSS Temperature Coefficient Reference to 25℃ , I D =1mA △BV DSS/△TJ - 0.034 - V/°C Static Drain-Source On-Resistance V GS =10V, I D =10A R DS(ON) - 5.5 7.5 mΩ V GS =4.5V, I D =8A - 6.5 10 Gate -Threshold Voltage V DS GS , I D =250uA V GS(th) 1.0 1.6 2.5 V V GS (th) Temperature Coefficient GS(th) - -4.96 - mV/°C Drain -Source Leakage Current V DS =32V , V GS =0V , T J =25℃ I DSS - - 1 μA V DS =32V , V GS =0V , T J =55℃ - - 5 Gate-Source Leakage Current V GS =±20V, V DS =0V I GSS - - ±100 nA Forward Transconductance V DS =5V, I D =10A g FS - 40 - S Gate Resistance V DS =0V , V GS =0V , f=1MHz R g - 1.6 - Total Gate Charge(4.5V) V DS =20V V GS =4.5V I D =10A Q g - 18.8 - nC Gate-Source Charge Q gs - 4.7 - Gate-Drain Charge Q gd - 8.2 - Turn-on delay time V DD =15V V GS =10V R G =3.3Ω I D =1A t d(on) - 14.3 - ns Rise Time T r - 2.6 - Turn-Off Delay Time t d(OFF) - 77 - Fall Time t f - 4.8 - Input Capacitance V DS =15V V GS =0V f=1.0MHz C iss - 2332 - P F Output Capacitance C oss - 193 - Reverse Transfer Capacitance C rss - 138 - Continuous Source Current 1,5 V G D =0V , Force Current I S - - 10.5 A Pulsed Source Current 2,5 I SM - - 42 A Diode Forward Voltage V GS =0V , I S =1A , T J =25℃ V SD - - V Note : 1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3、The power dissipation is limited by 175℃ junction temperature 4、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. Rev:2021Y1
www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. Ratings and Characteristic Curves Typical Characteristics Rev:2021Y1
www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. Ratings and Characteristic Curves Rev:2021Y1
www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. Package Outline Dimensions Millimeters Rev:2021Y1