YFW25G02NF

YFW25G02NF YFWDIODE | Alldatasheet

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www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. 20V N+P-CHANNEL ENHANCEMENT MODE MOSFET MAIN CHARACTERISTICS I D 32A V DSS 20V R DSON -typ(@V GS =4.5V) ＜10mΩ(Type:7.7 mΩ) I D -26.8A V DSS -20V R DSON -typ(@V GS =-4.5V) ＜20mΩ(Type:16.8 mΩ) Application Wireless charging Boost driver Brushless motor PDFN5*6-8L Product Specification Classification Part Number Package Marking Pack YFW25G02NF PDFN5*6-8L YFW 25G02NF XXXXX 5000PCS/Tape Maximum Ratings at Tc=25°C unless otherwise specified Characteristics Symbols Value Units N-Ch P-Ch Drain-Source Voltage VDS 20 -20 V Gate - Source Voltage VGS ±20 ±20 V Continuous Drain Current, V GS @ 10V C =25℃ I D 32 26.8 A Continuous Drain Current, V GS @ 10V C =100℃ I D 27.4 -22.5 A Pulsed Drain Current I DM 78 -69.1 A Single Pulse Avalanche Energy E AS 150 135 mJ Avalanche Current I AS 72 68 A Total Power Dissipation C =25℃ P D 46 41.3 W Storage Temperature Range T STG -55 to +150 -55 to +150 Operating Junction Temperature Range T J -55 to +150 -55 to +150 Thermal Resistance Junction-Ambient R θJA °C/W Thermal Resistance Junction-Case R θJC °C/W Rev:2021Y1

www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. N-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Characteristics Test Condition Symbols Min Typ Max Units Drain-Source Breakdown Voltage V GS =0V, I D =250uA V(BR)DSS 20 23 - V Zero Gate Voltage Drain Current V DS =20V, V GS =0V I DSS - - 1.0 μA Gate to Body Leakage Current V GS =±12V, V DS =0V I GSS - - ±100 nA Gate Threshold Voltage V DS GS , I D =250uA V GS(th) 0.58 0.65 1.2 V Static Drain-Source On-Resistance note3 V GS =4.5V, I D =25A R DS(ON) - 7.7 10 mΩ V GS =2.5V, I D =10A - 10 13 mΩ Input Capacitance V DS =10V V GS =0V f=1.0MHz C iss - 1458 - P F Output Capacitance C oss - 238 - Reverse Transfer Capacitance C rss - 212 - Total Gate Charge V DS =10V I D =25A V GS =4.5V Q g - 19 - nC Gate-Source Charge Q gs - 3 - Gate-Drain(“Miller”) Charge Q gd - 6.4 - Turn-on delay time V DS =10V I D = 10A R GEN = 3Ω V GS =4.5V t d(on) - 10 - ns Turn-on Rise Time T r - 21 - Turn-Off Delay Time t d(OFF) - 39 - Turn- Off Fall Time t f - 19 - Maximum Continuous Drain to Source Diode Forward Current I S - - 50 A Maximum Pulsed Drain to Source Diode Forward Current I SM - - 200 A Drain to Source Diode Forward Voltage V GS =0V , I S =30A V SD - - 1.2 V Body Diode Reverse Recovery Time I F =20A,dI/dt=100A/μs t rr - 25 - ns Body Diode Reverse Recovery Charge Q rr - 20 - nC Note : 1、The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3、The EAS data shows Max. rating . The test condition is V DD =16V,V GS =10V,L=0.1mH,I AS =21A 4、The power dissipation is limited by 150℃ junction temperature 5、The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation. Rev:2021Y1

www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. P-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Characteristics Test Condition Symbols Min Typ Max Units Drain-Source Breakdown Voltage V GS =0V, I D =-250uA V(BR)DSS -20 -22 - V Zero Gate Voltage Drain Current V DS =-20V, V GS =0V I DSS - - -1 μA Gate to Body Leakage Current V GS =±12V, V DS =0V I GSS - - ±100 nA Gate Threshold Voltage V DS GS , I D =-250uA V GS(th) -0.58 -0.7 -1.2 V Static Drain-Source On-Resistance note2 V GS =-4.5V, I D =-10A R DS(ON) - 16.8 20 mΩ V GS =-2.5V, I D =-5A - 21.5 25 mΩ Input Capacitance V DS =-10V V GS =0V f=1.0MHz C iss - 2000 - P F Output Capacitance C oss - 242 - Reverse Transfer Capacitance C rss - 231 - Total Gate Charge V DS =-10V I D =-6A V GS =-4.5V Q g - 15.3 - nC Gate-Source Charge Q gs - 2.2 - Gate-Drain(“Miller”) Charge Q gd - 4.4 - Turn-on delay time V DS =-10V I D = -12A R GEN = 2.5Ω V GS =-4.5V t d(on) - 10 - ns Turn-on Rise Time T r - 31 - Turn-Off Delay Time t d(OFF) - 28 - Turn- Off Fall Time t f - 8 - Maximum Continuous Drain to Source Diode Forward Current I S - - -12 A Maximum Pulsed Drain to Source Diode Forward Current I SM - - -48 A Drain to Source Diode Forward Voltage V GS =0V , I S =-12A V SD - -0.8 -1.2 V Note : 1、The data tested by surface mo unted on a 1 inch FR-4 board with 2OZ copper. 2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3、The EAS data shows Max. rating . The test condition is V DD =-16V,V GS =-10V,L=0.1mH,I AS =-21A 4、The power dissipation is limited by 150℃ junction temperature 5 、The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation. Rev:2021Y1

www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. Ratings and Characteristic Curves P-Typical Characteristics Rev:2021Y1

www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. Ratings and Characteristic Curves Rev:2021Y1

PDFN5*6-8L YFW25G02NF www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. Package Outline Dimensions Millimeters Symbol Common mm Mim Nom Max A 0.90 1.00 1.10 b 0.33 0.41 0.51 C 0.20 0.25 0.30 D1 4.80 4.90 5.00 D2 3.61 3.81 3.96 E 5.90 6.00 6.10 e 1.27BSC H 0.41 0.51 0.61 K 1.10 -- -- L 0.51 0.61 0.71 L1 0.06 0.13 0.20 M 0.50 -- -- a 0° -- 12° 5.835.765.66 3.37 3.583.47 Rev:2021Y1Rev:2021Y1