YFW2312MI YFWDIODE | Alldatasheet

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www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. 20V N-CHANNEL ENHANCEMENT MODE MOSFET MAIN CHARACTERISTICS I D 6.8A V DSS 20V R DSON -typ(@V GS =4.5V) ＜18mΩ(Type:12 mΩ) Application Lithium battery protection Wireless impact Mobile phone fast charging SOT23-3L Product Specification Classification Part Number Package Marking Pack YFW2312MI SOT23-3L AE9T 3000PCS/Tape Maximum Ratings at Tc=25°C unless otherwise specified Characteristics Symbols Value Units Drain-Source Voltage V DS V Gate - Source Voltage V GS ±12 V Continuous Drain Current A =25℃ I D 6.8 A Continuous Drain Current A =70℃ I D 6.0 A Pulsed Drain Current I DM A Total Power Dissipation A =25℃ P D 1.5 W Storage Temperature Range T STG -55 to +150 Operating Junction Temperature Range T J -55 to +150 Thermal Resistance Junction-ambient R θJA °C/W Rev:2021Y1

www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. Maximum Ratings at Tc=25°C unless otherwise specified Characteristics Test Condition Symbols Min Typ Max Units Drain-Source Breakdown Voltage V GS =0V, I D =250uA BV DSS 20 22 - V Gate -Threshold Voltage V DS GS , I D =250uA V GS(th) 0.5 0.65 1.0 V Static Drain-Source On-Resistance V GS =4.5V, I D =7.6A R DS(ON) - 12 18 mΩ V GS =2.5V, I D =3.5A - 15.5 20 V GS =1.8V, I D =2.5A 20.5 35 Zero Gate Voltage Drain Current V DS =20V , V GS =0V I DSS - - 1 μA Gate-Body Leakage Current V GS =±12V, V DS =0V I GSS - - ±100 nA Input Capacitance V DS =10V V GS =0V f=1.0MHz C iss - 888 - P F Output Capacitance C oss - 133 - Reverse Transfer Capacitance C rss - 117 - Total Gate Charge V GS =4.5V V DS =10V I D =6.8A Q g - 11.05 - nC Gate-Source Charge Q gs - 1.73 - Gate-Drain Charge Q gd - 3.1 - Turn-on delay time V GS =4.5V V DS =10V I D =6.8A R G =3Ω t d(on) - 7 - ns Turn-on Rise Time T r - 46 - Turn-Off Delay Time t d(OFF) - 30 - Turn-Off Fall Time t f - 52 - Diode Forward Voltage V GS =0V , I S =7.6A V SD - - 1.2 V Note : 1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3、The power dissipation is limited by 150℃ junction temperature 4、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation Rev:2021Y1

www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. Ratings and Characteristic Curves Typical Characteristics Figure1. Output Characteristics Figure2. Transfer Characteristics Figure 3: On-Resistance vs. Drain Current Figure 4: On-Resistance vs. Junction Temperature and Gate Voltage Figure5. Capacitance Characteristics Figure6. Gate Charge Rev:2021Y1

www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. Ratings and Characteristic Curves Figure7. Safe Operation Area Figure8. Maximum Continuous Drain Current vs Ambient Temperature Figure9. Normalized Maximum Transient Thermal Impedance Rev:2021Y1

www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. Package Outline Dimensions Millimeters Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 1.050 1.250 0.041 0.049 A1 0.000 0.100 0.000 0.004 A2 1.050 1.150 0.041 0.045 b 0.300 0.500 0.012 0.020 c 0.100 0.200 0.004 0.008 D 2.820 3.020 0.111 0.119 E1 1.500 1.700 0.059 0.067 E 2.650 2.950 0.104 0.116 e 0.950(BSC) 0.037(BSC) e1 1.800 2.000 0.071 0.079 L 0.300 0.600 0.012 0.024 θ 0° 8° 0° 8° Rev:2021Y1