YFW2300A_V01 YFWDIODE | Alldatasheet
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www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. 20V N-CHANNEL ENHANCEMENT MODE MOSFET MAIN CHARACTERISTICS I D 4.5A V DSS 20V R DSON -typ(@V GS =4.5V) ＜30mΩ(Type:22 mΩ) Application Battery protection Load switch Uninterruptible power supply SOT-23 Product Specification Classification Part Number Package Marking Pack YFW2300A SOT-23 2300 3000PCS/Tape Maximum Ratings at Tc=25°C unless otherwise specified Characteristics Symbols Value Units Drain-Source Voltage V DS V Gate - Source Voltage V GS ±12 V Continuous Drain Current, V GS @ 4.5V A =25℃ I D 4.5 A Continuous Drain Current, V GS @ 4.5V A =70℃ I D 2.8 A Pulsed Drain Current I DM 14.4 A Total Power Dissipation A =25℃ P D W Storage Temperature Range T STG -55 to +150 Operating Junction Temperature Range T J -55 to +150 Thermal Resistance Junction-ambient R θJA 125 °C/W Thermal Resistance Junction Case R θJC °C/W Rev:2021Y1
www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. Maximum Ratings at Tc=25°C unless otherwise specified Characteristics Test Condition Symbols Min Typ Max Units Drain-Source Breakdown Voltage V GS =0V, I D =250uA BV DSS 20 22 - V Static Drain-Source On-Resistance V GS =4.5V, I D =3A R DS(ON) - 22 30 mΩ V GS =2.5V, I D =2A - 28 35 Gate -Threshold Voltage V DS GS , I D =250uA V GS(th) 0.5 0.75 1.2 V Drain-Source Leakage Current V DS =16V , V GS =0V , T J =25℃ I DSS - - 1 μA V DS =16V , V GS =0V , T J =55℃ - - 5 Gate-Source Leakage Current V GS =±12V, V DS =0V I GSS - - ±100 nA Forward Transconductance V DS =5V , I D =3A g fs - 10.5 - S Total Gate Charge(4.5V) V DS =15V V GS =4.5V I D =3A Q g - 4.6 - nC Gate-Source Charge Q gs - 0.7 - Gate-Drain Charge Q gd - 1.5 - Turn-on delay time V DD =10V V GS =4.5V R G =3.3Ω I D = 3A t d(on) - 1.6 - ns Rise Time T r - 42 - Turn-Off Delay Time t d(OFF) - 14 - Fall Time t f - 7 - Input Capacitance V DS =15V V GS =0V f=1.0MHz C iss - 310 - P F Output Capacitance C oss - 49 - Reverse Transfer Capacitance C rss - 35 - Continuous Source Current 1,4 V G D =0V , Force Current I S - - 3.6 A Diode Forward Voltage V GS =0V , I S =1A , T J =25℃ V SD - - 1.2 V Note : 1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3、The power dissipation is limited by 150℃ junction temperature 4、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. Rev:2021Y1
www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. Package Outline Dimensions Millimeters Symbol Dimensions in Millimeters MIN. MAX. A 0.900 1.150 A1 0.000 0.100 A2 0.900 1.050 b 0.300 0.500 c 0.080 0.150 D 2.800 3.000 E 1.200 1.400 E1 2.250 2.550 e 0.950TYP e1 1.800 2.000 L 0.550REF L1 0.300 0.500 θ 0° 8° Rev:2021Y1