YFW20N02DF

YFW20N02DF YFWDIODE | Alldatasheet

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www.yfwdiode.com 20V N- CHANNEL ENHANCEMENT MODE MAIN CHARACTERISTICS I D V DSS R DSON -typ(@V GS =10V) ＜8.0 m Application Battery protection Load switch Uninterruptible power supply Product Specification Classification Part Number YFW20N02DF PDFN3*3 Maximum Ratings at Tc =25°C unless otherwise specified Characteristics Drain-Source Voltage Gate - Source Voltage Continuous Drain Current T C =25℃ Continuous Drain Current T C =100℃ Pulsed Drain Current note1 Single Pulse Avalanche Energy note2 Total Power Dissipation T C =25℃ Thermal Resistance, Junction to Case Operating and Storage Temperature Range GuangDong CHANNEL ENHANCEMENT MODE MOSFET 20A 20V m Ω(Type:6.1 mΩ) PDFN3*3 Product Specification Classification Package Marking PDFN3*3 -8L YFW 20N02DF XXXXX =25°C unless otherwise specified Symbols Value V DS V GS I D I D I DM E AS P D R θJC 4.84 T J STG 55 to +150 YFW20N02DF GuangDong YFW Electronics Co, Ltd. PDFN3*3 -8L Pack 5000PCS/Tape Value Units V V A A A mJ W 4.84 °C/W 55 to +150 Rev:2021Y1

www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. Maximum Ratings at Tc=25°C unless otherwise specified Characteristics Test Condition Symbols Min Typ Max Units Drain-Source Breakdown Voltage V GS =0V, I D =250uA V(BR)DSS 20 22 - V Zero Gate Voltage Drain Current V DS =20V, V GS =0V I DSS - - 1.0 μA Gate to Body Leakage Current V GS =±12V, V DS =0V I GSS - - ±100 nA Gate -Threshold Voltage V DS GS , I D =250uA V GS(th) 0.4 0.7 1.1 V Static Drain-Source On-Resistance note3 V GS =4.5V, I D =25A R DS(ON) - 6.1 8.0 mΩ V GS =2.5V, I D =10A - 8.8 13 Input Capacitance V DS =10V V GS =0V f=1.0MHz C iss - 1458 - P F Output Capacitance C oss - 238 - Reverse Transfer Capacitance C rss - 212 - Total Gate Charge V DS =10V I D =25A V GS =4.5V Q g - 19 - nC Gate-Source Charge Q gs - 3 - Gate-Drain(“Miller”) Charge Q gd - 6.4 - Turn-on delay time V DS =10V I D = 10A R GEN = 3Ω V GS =4.5V t d(on) - 10 - ns Turn-on Rise Time T r - 21 - Turn-Off Delay Time t d(OFF) - 39 - Turn- Off Fall Time t f - 19 - Maximum Continuous Drain to Source Diode Forward Current I S - - 50 A Maximum Pulsed Drain to Source Diode Forward Current I SM - - 200 A Drain to Source Diode Forward Voltage V GS =0V , I S =30A V SD - - 1.2 V Body Diode Reverse Recovery Time I F =20A,dI/dt=100A/μs t rr - 25 - ns Body Diode Reverse Recovery Charge Q rr - 20 - nC Note : 1、The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2、The data tested by pulsed , pulse width .The EAS data shows Max. rating . 3、The EAS condition: T J =25℃, V DD =16V, V G =10V, R G =0.6Ω, L=0.5mH, I AS =33A 4、The power dissipation is limited by 175℃ junction temperature 5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. Rev:2021Y1

PDFN3*3-8L YFW20N02DF www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. Package Outline Dimensions Millimeters Symbol Common mm Mim Nom Max A 0.70 0.75 0.85 A1 / / 0.05 b 0.20 0.30 0.40 c 0.10 0.152 0.25 D 3.15 3.30 3.45 D1 3.00 3.15 3.25 D2 2.29 2.45 2.65 E 3.15 3.30 3.45 E1 2.90 3.05 3.20 E2 1.54 1.74 1.94 E3 0.28 0.48 0.65 E4 0.37 0.57 0.77 E5 0.10 0.20 0.30 e 0.60 0.65 0.70 K 0.59 0.69 0.89 L 0.30 0.40 0.50 L1 0.06 0.125 0.20 t 0 0.075 0.13 Φ 10 12 14 Rev:2021Y1