YFW20H04S

YFW20H04S YFWDIODE | Alldatasheet

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www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. 40V N+N-CHANNEL ENHANCEMENT MODE MOSFET MAIN CHARACTERISTICS I D 20A V DSS 40V R DSON -typ(@V GS =10V) ＜10.5mΩ(Type:8.5 mΩ) Application Battery protection Load switch Uninterruptible power supply SOP-8 Product Specification Classification Part Number Package Marking Pack YFW20H04S SOP-8 YFW 20H04S XXXXX 3000PCS/Tape Maximum Ratings at Tc=25°C unless otherwise specified Characteristics Symbols Value Units Drain-Source Voltage VDS V Gate - Source Voltage VGS ±20 V Continuous Drain Current, VGS @ 10V A =25℃ I D 20 A Continuous Drain Current, VGS @ 10V A =70℃ I D 10.2 A Pulsed Drain Current I DM A Single Pulse Avalanche Energy E AS mJ Avalanche Current I AS A Total Power Dissipation A =25℃ P D 1.5 W Storage Temperature Range T STG -55 to +150 Operating Junction Temperature Range T J -55 to +150 Thermal Resistance Junction-ambient (Steady State)1 R θJA °C/W Thermal Resistance Junction-Case1 R θJC °C/W Rev:2021Y1

www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. Maximum Ratings at Tc=25°C unless otherwise specified Characteristics Test Condition Symbols Min Typ Max Units Drain-Source Breakdown Voltage V GS =0V, I D =250uA B VDSS 40 - - V BVDSS Temperature Coefficient Reference to 25℃ , I D =1mA △BV DSS/△TJ - 0.034 - V/℃ Static Drain-Source On-Resistance V GS =10V, I D =6A R DS(ON) - 8.5 10.5 mΩ V GS =4.5V, I D =3A - 11.0 15 Gate Threshold Voltage V DS GS , I D =250uA V GS(th) 1.0 - 2.5 V V GS(th) Temperature Coefficient GS(th) - -5.64 - mV/℃ Drain-Source Leakage Current V DS =32V, V GS =0V T J =25℃ I DSS - - 1 uA V DS =32V , V GS =0V , T J =55℃ - - 5 Gate-Source Leakage Current V GS =±20V, V DS =0V I GSS - - ±100 nA Forward Transcond uctance V DS = 5V, I D = 6A g fs - 31 - S Gate Resistance V DS =0V , V GS =0V , f=1MHz R g 2.1 - Ω Total Gate Charge（4.5V） V DS =20V V GS =4.5V I D =6A Q g - 10.7 - nC Gate-Source Charge Q gs - 3.3 - Gate-Drain Charge Q gd - 4.2 - Turn-on delay time V DD =12V V GS =10V R G = 3.3 I D = 6A t d(on) - 8.6 - ns Rise Time T r - 3.4 - Turn-Off Delay Time t d(OFF) - 25 - Fall Time t f - 2.2 - Input Capacitance V DS =15V V GS =0V f=1.0MHz C iss - 1314 - P F Output Capacitance C oss - 120 - Reverse Transfer Capacitance C rss - 88 - Continuous Source Current 1,5 V G D =0V , Force Current I S - - 7.5 A Pulsed Source Current 2,5 I SM - - 30 A Diode Forward Voltage V GS =0V , I S =1A , T J =25℃ V SD - - 1.2 V Note : 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is V DD =25V,V GS =10V,L=0.1mH,I AS =25A 4 .The power dissipation is limited by 175℃ junction temperature 5.The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation. Rev:2021Y1

www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. Ratings and Characteristic Curves 0 0.25 0.5 0.75 1 VDS , Drain-to-Source Voltage (V) ID Drain Current (A) VGS=10V VGS=7V VGS=5V VGS=4.5V VGS=3V VSD , Source-to-Drain Voltage (V) IS Source Current(A) TJ=150℃ TJ=25℃ 0 5 10 15 20 25 QG , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) VDS=20V ID=6A 0.2 0.6 1.4 1.8 -50 0 50 100 150 TJ ,Junction Temperature (℃ ) Normalized V GS(th) 0.2 0.6 1.0 1.4 1.8 -50 0 50 100 150 TJ , Junction Temperature (℃) Normalized On Resistance Typical Characteristics Fig.1 Typical Output Characteristics Fig.3 Forward Characteristics of Reverse diode Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ 2 4 6 8 10 VGS (V) RDSON (mΩ) ID=12A Fig.2 On-Resistance vs. G-S Voltage Rev:2021Y1

www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. Ratings and Characteristic Curves 100 1000 10000 1 5 9 13 17 21 25 VDS Drain to Source Voltage (V) Capacitance (pF) F=1.0MHz Ciss Coss Crss 0.01 0.10 1.00 10.00 100.00 0.01 0.1 1 10 100 1000 VDS (V) ID (A) TA=25oC Single Pulse 100ms 100us 1ms 10ms DC 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (RθJA) 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PDM D = TON/T TJpeak = TC+PDMXRθJC TON T Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% IAS VGS BVDSS VDD EAS=

2 L x IAS

Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform waveform Rev:2021Y1

www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. Package Outline Dimensions Millimeters Rev:2021Y1Rev:2021Y1