YFW20H04NF YFWDIODE | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 6
Technical content
www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. 40V N+N-CHANNEL ENHANCEMENT MODE MOSFET MAIN CHARACTERISTICS I D 20A V DSS 40V R DSON -typ(@V GS =10V) ＜16mΩ(Type:10.5 mΩ) Application Battery protection Load switch Uninterruptible power supply PDFN5*6-8L Product Specification Classification Part Number Package Marking Pack YFW20H04NF PDFN5*6-8L YFW 20H04NF XXXXX 5000PCS/Tape Maximum Ratings at Tc=25°C unless otherwise specified Characteristics Symbols Value Units Drain-Source Voltage VDS V Gate - Source Voltage VGS ±20 V Drain Current-Continuous I D 20 A Drain Current-Continuous(T C =100℃) I D (100℃) 8.4 A Pulsed Drain Current I DM 100 A Maximum Power Dissipation P D W Operating Junction and Storage Temperature Range T T STG -55 to +150 Thermal Resistance,Junction-to-Ambient (Note 2) R θJA 62.5 °C/W Rev:2021Y1
www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. Maximum Ratings at Tc=25°C unless otherwise specified Characteristics Test Condition Symbols Min Typ Max Units Drain-Source Breakdown Voltage V GS =0V, I D =250uA B VDSS 40 - - V Zero Gate Voltage Drain Current V DS =40V, V GS =0V I DSS - - 1 uA Gate-Body Leakage Current V GS =±20V, V DS =0V I GSS - - ±100 nA Gate -Threshold Voltage V DS GS , I D =250uA V GS(th) 1 1.5 2.0 V Drain-Source On-State Resistance V GS =10V, I D =8A R DS(ON) - 10.5 16 mΩ Drain-Source On-State Resistance V GS =4.5V, I D =4A R DS(ON) - 18.9 24 mΩ Forward Transcond uctance V DS = 5V, I D = 8A g fs 33 - - S Input Capacitance V DS =20V V GS =0V f=1.0MHz C iss - 964 - P F Output Capacitance C oss - 109 - P F Reverse Transfer Capacitance C rss - 96 - P F Turn-on delay time V DD =20V R L =2.5 Ω V GS =10V R GEN = 3Ω t d(on) - 5.5 - ns Turn-on Rise Time T r - 14 - ns Turn-Off Delay Time t d(OFF) - 24 - ns Turn- Off Fall Time t f - 12 - ns Total Gate Charge V DS =20V I D =8A V GS =10V Q g - 22.9 - nC Gate-Source Charge Q gs - 3.5 - nC Gate-Drain Charge Q gd - 5.3 - nC Diode Forward Voltage (Note 3) V GS =0V , I S =9A V SD - 0.8 1.2 V Rev:2021Y1
www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. Ratings and Characteristic Curves Rev:2021Y1
www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. Ratings and Characteristic Curves Square Wave Pluse Duration(sec) Figure 13 Normalized Maximum Transient Thermal Impedance Rev:2021Y1
PDFN5*6-8L YFW20H04NF www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. Package Outline Dimensions Millimeters Symbol Common mm Mim Nom Max A 0.90 1.00 1.10 b 0.33 0.41 0.51 C 0.20 0.25 0.30 D1 4.80 4.90 5.00 D2 3.61 3.81 3.96 E 5.90 6.00 6.10 E1 5.70 3.30 3.45 E2 3.38 3.05 3.20 e 1.27BSC H 0.41 0.51 0.61 K 1.10 -- -- L 0.51 0.61 0.71 L1 0.06 0.13 0.20 M 0.50 -- -- a 0° -- 12° Rev:2021Y1