YFW20G03GD

YFW20G03GD YFWDIODE | Alldatasheet

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www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. 30V N+P-CHANNEL ENHANCEMENT MODE MOSFET MAIN CHARACTERISTICS I D 25A V DSS 30V R DSON -typ(@V GS =10V) ＜25mΩ(Type:15 mΩ) I D -18A V DSS -30V R DSON -typ(@V GS =-10V) ＜42mΩ(Type:36 mΩ) Application BLDC TO-252-4L Product Specification Classification Part Number Package Marking Pack YFW20G03GD TO-252-4L YFW 20G03GD XXXX 2500PCS/Tape Maximum Ratings at Tc=25°C unless otherwise specified Characteristics Symbols Value Units N-Ch P-Ch Drain-Source Voltage VDS 30 -30 V Gate - Source Voltage VGS ±20 ±20 V Continuous Drain Current, V GS @ 10V A =25℃ I D 25 -18 A Continuous Drain Current, V GS @ 10V A =70℃ I D 10 -8.1 A Pulsed Drain Current I DM 52 -40 A Single Pulse Avalanche Energy E AS 22 22 mJ Avalanche Current I AS 21 11 A Total Power Dissipation A =25℃ P D 18 18 W Storage Temperature Range T STG -55 to +150 Operating Junction Temperature Range T J -55 to +150 Thermal Resistance Junction-Ambient R θJA °C/W Thermal Resistance Junction-Case R θJC °C/W Rev:2021Y1

www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. N-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Characteristics Test Condition Symbols Min Typ Max Units Drain-Source Breakdown Voltage V GS =0V, I D =250uA BV DSS 30 31.5 - V BVDSS Temperature Coefficient Reference to 25℃ , I D =1mA △BV DSS/△TJ - 0.023 - V/℃ Static Drain-Source On-Resistance V GS =10V, I D =5A R DS(ON) - 15 25 mΩ V GS =4.5V, I D =3A - 24 40 mΩ Gate Threshold Voltage V DS GS , I D =250uA V GS(th) 1.0 1.6 2.5 V V GS(th) Temperature Coefficient GS(th) - -4.2 - mV/℃ Drain-Source Leakage Current V DS =24V, V GS =0V T J =25℃ I DSS - - 1 uA V DS =24V , V GS =0V , T J =55℃ - - 5 Gate-Source Leakage Current V GS =±20V, V DS =0V I GSS - - ±100 nA Forward Transconductance V DS = 5V, I D = 6A g fs - 5.8 - S Gate Resistance V DS =0V , V GS =0V , f=1MHz R g - 2.3 - Ω Total Gate Charge(4.5V) V DS =20V V GS =4.5V I D =6A Q g - 5 - nC Gate-Source Charge Q gs - 1.11 - Gate-Drain Charge Q gd - 2.61 - Turn-on delay time V DD =12V V GS =10V R G = 3.3Ω I D =6A t d(on) - 7.7 - ns Rise Time T r - 46 - Turn-Off Delay Time t d(OFF) - 11 - Fall Time t f - 3.6 - Input Capacitance V DS =15V V GS =0V f=1MHz C iss - 416 - P F Output Capacitance C oss - 62 - Reverse Transfer Capacitance C rss - 51 - Continuous Source Current 1,5 V G D =0V , Force Current I S - - 6.2 A Pulsed Source Current 2,5 I SM - - 24 A Diode Forward Voltage V GS =0V , I S =1A , T J =25℃ V SD - - 1.2 V Note : 1、The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2、The data tested by pulsed , pulse width ≦ 300us , duty cycle≦ 2% 3、The EAS data shows Max. rating . The test condition is V DD =24V,V GS =10V,L=0.1mH,I AS =21A 4、The power dissipation is limited by 150℃ junction temperature 5、The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation. Rev:2021Y1

www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. P-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Characteristics Test Condition Symbols Min Typ Max Units Drain-Source Breakdown Voltage V GS =0V, I D =-250uA BV DSS -30 -32 - V BVDSS Temperature Coefficient Reference to 25℃ , I D =-1mA △BV DSS/△TJ - -0.02 - V/℃ Static Drain-Source On-Resistance V GS =-10V, I D =-4.1A R DS(ON) - 36 42 mΩ V GS =-4.5V, I D =-3.5A - 52 60 mΩ Gate Threshold Voltage V DS GS , I D =-250uA V GS(th) -1.0 -1.7 -2.5 V V GS(th) Temperature Coefficient GS(th) - 4.32 - mV/℃ Drain-Source Leakage Current V DS =-24V, V GS =0V T J =25℃ I DSS - - -1 uA V DS =-24V , V GS =0V , T J =55℃ - - -5 Gate-Source Leakage Current V GS =±20V, V DS =0V I GSS - - ±100 nA Forward Transconductance V DS = -5V, I D =- 3A g fs - 4.7 - S Gate Resistance V DS =0V , V GS =0V , f=1MHz R g 24 - Ω Total Gate Charge(-4.5V) V DS =-20V V GS =-4.5V I D =-5A Q g - 5.22 - nC Gate-Source Charge Q gs - 1.25 - Gate-Drain Charge Q gd - 2.3 - Turn-on delay time V DD =-15V V GS =-10V R G = 3.3Ω I D =-1A t d(on) - 18.4 - ns Rise Time T r - 11.4 - Turn-Off Delay Time t d(OFF) - 39.4 - Fall Time t f - 5.2 - Input Capacitance V DS =-15V V GS =0V f=1MHz C iss - 463 - P F Output Capacitance C oss - 82 - Reverse Transfer Capacitance C rss - 68 - Continuous Source Current 1,5 V G D =0V , Force Current I S - - -4 A Pulsed Source Current 2,5 I SM - - -24 A Diode Forward Voltage V GS =0V , I S =-1A , T J =25℃ V SD - - -1 V Note : 1、The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3、The EAS data shows Max. rating . The test condition is V DD =-24V,V GS =-10V,L=0.1mH,I AS =-11A 4、The power dissipation is limited by 150℃ junction temperature 5、The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation. Rev:2021Y1

www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. Ratings and Characteristic Curves N-Channel Typical Characteristics -50 0 50 100 150 - 5 0 0 50 100 150 TJ ,Junction Temperature (℃ ) TJ , Junction Temper℃) Fig. Normalized V GS(th) vs. T J Fig. Normalized R DSON vs. T J Rev:2021Y1

www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. Ratings and Characteristic Curves T d on T r T on T d off T f T off V DS V GS I AS V GS BV DSS V DD EAS L x I AS x BV DSS BV DSS V DD Fig. Normalized Maximum Transient Thermal Impedance Fig. Switching Time Waveform Fig. Unclamped Inductive Switching Waveform Rev:2021Y1

www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. Ratings and Characteristic Curves P-Channel Typical Characteristics -VSD , Source-to-Drain Voltage (V) QG , Total Gate Charge (nC 0.5 1.5 -50 100 150 T J ,Junction Temperature ( 0.5 1.0 1.5 2.0 -50 100 150 T J , Junction Temperature ( Fig. Forward C haracteristics of R ever se Fig. Gate C harge C haracteristics Fig. Normalized V GS(th) vs. T J Fig. Normalized R DSON vs. T J Rev:2021Y1

www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. Ratings and Characteristic Curves Fig. Normalized Maximum Transient Thermal Impedance Fig. Switching Time Waveform Fig. Unclamped Inductive Switching Waveform Rev:2021Y1

www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. Package Outline Dimensions Millimeters Symbol Common mm Mim Nom Max D 6.30 6.55 6.80 D1 4.80 5.35 5.90 C 9.70 10.00 10.30 E 5.90 6.10 6.30 E3 4.50 5.15 5.80 L 0.90 1.35 1.80 L1 2.60 2.85 3.05 L2 0.50 0.85 1.20 b 0.30 0.50 0.70 b1 0.40 0.60 0.80 A 2.10 2.30 2.50 A2 0.40 0.53 0.65 A1 0.00 0.10 0.20 e 1.17 1.27 1.37 TO-252-4L Rev:2021Y1