YFW15H06S YFWDIODE | Alldatasheet
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www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. 60V N+N-CHANNEL ENHANCEMENT MODE MOSFET MAIN CHARACTERISTICS I D 15A V DSS 60V R DSON -typ(@V GS =10V) ＜18mΩ(Type:11 mΩ) Application Battery protection Load switch Uninterruptible power supply SOP-8 Product Specification Classification Part Number Package Marking Pack YFW15H06S SOP-8 YFW 15H06S XXXXX 3000PCS/Tape Maximum Ratings at Tc=25°C unless otherwise specified Characteristics Symbols Value Units Drain-Source Voltage VDS V Gate - Source Voltage VGS ±20 V Continuous Drain Current, V GS @ 10V A =25℃ I D 15 A Continuous Drain Current, V GS @ 10V A =70℃ I D 9.2 A Pulsed Drain Current I DM A Single Pulse Avalanche Energy E AS mJ Total Power Dissipation A =25℃ P D 3.6 W Storage Temperature Range T STG -55 to +150 Operating Junction Temperature Range T J -55 to +150 Thermal Resistance Junction-Ambient R θJA °C/W Rev:2021Y1
www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. Maximum Ratings at Tc=25°C unless otherwise specified Characteristics Test Condition Symbols Min Typ Max Units Drain-Source Breakdown Voltage V GS =0V, I D =250uA B VDSS 60 65 - V BVDSS Temperature Coefficient Reference to 25℃ , I D =1mA △BV DSS/△TJ - 0.057 - V/℃ Static Drain-Source On-Resistance V GS =10V, I D =12A R DS(ON) - 11 18 mΩ V GS =4.5V, I D =10A - 15 20 Gate Threshold Voltage V DS GS , I D =250uA V GS(th) 1.2 1.6 2.5 V V GS(th) Temperature Coefficient GS(th) - -5.68 - mV/℃ Drain-Source Leakage Current V DS =48V, V GS =0V T J =25℃ I DSS - - 1 uA V DS =48V , V GS =0V , T J =55℃ - - 5 Gate-Source Leakage Current V GS =±20V, V DS =0V I GSS - - ±100 nA Forward Transcond uctance V DS = 5V, I D = 15A g fs - 45 - S Gate Resistance V DS =0V , V GS =0V , f=1MHz R g 1.7 - Ω Total Gate Charge（4.5V） V DS =48V V GS =4.5V I D =15A Q g - 19.3 - nC Gate-Source Charge Q gs - 7.1 - Gate-Drain Charge Q gd - 7.6 - Turn-on delay time V DD =30V V GS =10V R G = 3.3Ω I D = 15A t d(on) - 7.2 - ns Rise Time T r - 50 - Turn-Off Delay Time t d(OFF) - 36.4 - Fall Time t f - 7.6 - Input Capacitance V DS =15V V GS =0V f=1.0MHz C iss - 2423 - P F Output Capacitance C oss - 145 - Reverse Transfer Capacitance C rss - 97 - Continuous Source Current 1,5 V G D =0V , Force Current I S - - 35 A Pulsed Source Current 2,5 I SM - - 80 A Diode Forward Voltage V GS =0V , I S =1A , T J =25℃ V SD - - 1 V Reverse Recovery Time IF=15A , dI/dt=100A/µs , T J =25℃ t rr - 16.3 - nS Reverse Recovery Charge Q rr - 11 - nC Notes: 1、The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2、The data tested by pulsed , pulse width .The EAS data shows Max. rating . 3、The power dissipation is limited by 175℃ junction temperature 4、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. Rev:2021Y1
www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. Ratings and Characteristic Curves Typical Characteristics Figure1: Output Characteristics Figure 2: Typical Transfer Characteristics Rev:2021Y1
www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. Ratings and Characteristic Curves Rev:2021Y1
www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. Package Outline Dimensions Millimeters Rev:2021Y1