YFW15G03ES

YFW15G03ES YFWDIODE | Alldatasheet

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www.yfwdiode.com 30V N+P- CHANNEL ENHANCEMENT MODE MAIN CHARACTERISTICS I D V DSS R DSON -typ(@V GS =10V) ＜13 I D V DSS R DSON -typ(@V GS =-10V) ＜25 Application Wireless charging Boost driver Brushless motor Product Specification Classification Part Number YFW15G03ES Maximum Ratings at Tc =25°C unless otherwise specified Characteristics Drain-Source Voltage Gate - Source Voltage Continuous Drain Current, V GS @ 10V C =25℃ Continuous Drain Current, V GS @ 10V C =100℃ Pulsed Drain Current Single Pulse Avalanche Energy Avalanche Current Total Power Dissipation C =25℃ Storage Temperature Range Operating Junction Temperature Range Thermal Resistance Junction-Ambient Thermal Resistance Junction-Case GuangDong CHANNEL ENHANCEMENT MODE MOSFET 19.3A 30V mΩ(Type:10 mΩ) -16.5A -30V mΩ(Type:21 mΩ) Product Specification Classification Package Marking ESOP-8 YFW 15G03ES XXXX =25°C unless otherwise specified Symbols Value N-Ch VDS VGS ±20 I D 19.3 I D 12.5 I DM E AS I AS P D T STG 55 to +150 T J 55 to +150 R θJA R θJC YFW15G03ES GuangDong YFW Electronics Co, Ltd. ESOP-8 Pack 3000PCS/Tape Value Units P-Ch -30 V ±20 V -16.5 A -11.5 A -49.1 A mJ 10.1 A 31.3 W 55 to +150 55 to +150 °C/W °C/W Rev:2021Y1

www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. N-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Characteristics Test Condition Symbols Min Typ Max Units Drain-Source Breakdown Voltage V GS =0V, I D =250uA BV DSS 30 32.5 - V BVDSS Temperature Coefficient Reference to 25℃ , I D =1mA △BV DSS/△TJ - 0.0193 - V/℃ Static Drain-Source On-Resistance V GS =10V, I D =15A R DS(ON) - 10 13 mΩ V GS =4.5V, I D =10A - 12 18 mΩ Gate Threshold Voltage V DS GS , I D =250uA V GS(th) 1.2 1.6 2.5 V V GS(th) Temperature Coefficient GS(th) - -3.97 - mV/℃ Drain-Source Leakage Current V DS =24V, V GS =0V T J =25℃ I DSS - - 1 uA V DS =24V , V GS =0V , T J =55℃ - - 5 Gate-Source Leakage Current V GS =±20V, V DS =0V I GSS - - ±100 nA Forward Transconductance V DS = 5V, I D = 30A g fs - 34 - S Gate Resistance V DS =0V , V GS =0V , f=1MHz R g - 1.8 - Ω Total Gate Charge(4.5V) V DS =15V V GS =4.5V I D =15A Q g - 9.8 - nC Gate-Source Charge Q gs - 4.2 - Gate-Drain Charge Q gd - 3.6 - Turn-on delay time V DD =15V V GS =10V R G = 3.3Ω I D =15A t d(on) - 4 - ns Rise Time T r - 8 - Turn-Off Delay Time t d(OFF) - 31 - Fall Time t f - 4 - Input Capacitance V DS =15V V GS =0V f=1MHz C iss - 940 - P F Output Capacitance C oss - 131 - Reverse Transfer Capacitance C rss - 109 - Continuous Source Current 1,5 V G D =0V , Force Current I S - - 43 A Pulsed Source Current 2,5 I SM - - 112 A Diode Forward Voltage V GS =0V , I S =1A , T J =25℃ V SD - - 1 V Reverse Recovery Time I F =30A,dI/dt=100A/μs， T J =25℃ t rr - 8.5 - ns Reverse Recovery Charge Q rr - 2.2 - nC Note : 1、The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3、The EAS data shows Max. rating . The test condition is V DD =25V,V GS =10V,L=0.1mH,I AS =10A 4、The power dissipation is limited by 150℃ junction temperature 5、The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation. Rev:2021Y1

www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. P-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Characteristics Test Condition Symbols Min Typ Max Units Drain-Source Breakdown Voltage V GS =0V, I D =-250uA BV DSS -30 32.5 - V BVDSS Temperature Coefficient Reference to 25℃ , I D =-1mA △BV DSS/△TJ - -0.022 - V/℃ Static Drain-Source On-Resistance V GS =-10V, I D =-5A R DS(ON) - 21 25 mΩ V GS =-4.5V, I D =-4A - 31 40 mΩ Gate Threshold Voltage V DS GS , I D =-250uA V GS(th) -1.0 -1.6 -2.5 V V GS(th) Temperature Coefficient GS(th) - 4.6 - mV/℃ Drain-Source Leakage Current V DS =-24V, V GS =0V T J =25℃ I DSS - - -1 uA V DS =-24V , V GS =0V , T J =55℃ - - -5 Gate-Source Leakage Current V GS =±20V, V DS =0V I GSS - - ±100 nA Forward Transconductance V DS = -5V, I D =- 6A g fs - 17 - S Gate Resistance V DS =0V , V GS =0V , f=1MHz R g 13 - Ω Total Gate Charge(-4.5V) V DS =-15V V GS =-4.5V I D =-6A Q g - 12.6 - nC Gate-Source Charge Q gs - 4.8 - Gate-Drain Charge Q gd - 4.8 - Turn-on delay time V DD =-15V V GS =-10V R G = 3.3 I D =-6A t d(on) - 4.6 - ns Rise Time T r - 14.8 - Turn-Off Delay Time t d(OFF) - 41 - Fall Time t f - 19.6 - Input Capacitance V DS =-15V V GS =0V f=1MHz C iss - 940 - P F Output Capacitance C oss - 194 - Reverse Transfer Capacitance C rss - 158 - Continuous Source Current 1,5 V G D =0V , Force Current I S - - -6.5 A Pulsed Source Current 2,5 I SM - - -26 A Diode Forward Voltage V GS =0V , I S =-1A , T J =25℃ V SD - - -1.2 V Reverse Recovery Time I F =-6A,dI/dt=100A/μs，T J =25℃ t rr - 16.3 - ns Reverse Recovery Charge Q rr - 5.9 - nC Note : 1、The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3、The EAS data shows Max. rating . The test condition is V DD =-25V,V GS =-10V,L=0.1mH,I AS =-10A 4、The power dissipation is limited by 150℃ junction temperature 5 、The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation. Ω Rev:2021Y1

www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. Ratings and Characteristic Curves N-Typical Characteristics 0.5 1.5 2.5 VDS , Drain-to-Source Voltage (V) ID Drain Current (A) VGS=10V VGS=7V VGS=5V VGS=4.5V V GS =3V 8.5 VGS (V) RDSON ID=15A 0 0.3 0.6 0.9 1.2 VSD , Source-to-Drain Voltage (V) IS Source Current(A) TJ=150℃ TJ=25℃ 2.5 7.5 0 5 10 15 20 QG , Total Gate Charge (nC) VGS Gate to Source Voltage (V) ID =8A VDS=15V 0.5 1.5 -50 100 150 T J ,Junction Temperature ( Normalized V GS(th) 0.5 1.0 1.5 2.0 -50 100 150 T J , Junction Temperature ( Normalized On Resistance Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage Fig.3 Forward Characteristics of Reverse diode Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ Rev:2021Y1

www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. Ratings and Characteristic Curves 100 1000 10000 VDS Drain to Source Voltage(V) Capacitance (pF) F=1.0MHz Ciss Coss Crss 0.01 0.10 1.00 10.00 100.00 0.01 0.1 1 10 100 VDS (V) ID (A) TA=25oC Single Pulse 100ms 100us 1ms 10ms DC 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 100 1000 t , Pulse Width (s) Normalized Thermal Response (RθJA) 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PDM D = TON/T TJpeak = TC+PDMXRθJC TON T Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% IAS VGS BVDSS VDD EAS=

2 L x IAS

Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform Rev:2021Y1

www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. Ratings and Characteristic Curves P-Typical Characteristics 2 4 6 8 10 VGS (V) RDSON ID 0.2 0.4 0.6 0.8 -VSD , Source-to-Drain Voltage (V) -IS Source Current(A) TJ=150℃ TJ=25℃ 0.5 1.5 -50 100 150 TJ ,Junction Temperature ( ℃) Normalized VGS(th) 0.5 1.0 1.5 2.0 -50 100 150 TJ , Junction Temperature ( Normalized On Resistance Fig.1 Typical Output Characteristics Fig.2 On-Resistance v.s Gate-Source Voltage Fig.3 Forward Characteristics of Reverse diode Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) v.s TJ Fig.6 Normalized RDSON v.s TJ =15A Rev:2021Y1

www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. Ratings and Characteristic Curves 100 1000 10000 1 5 9 13 17 21 25-VDS Drain to Source Voltage(V) Capacitance (pF) F=1.0MHz Ciss Coss Crss 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 100 1000 t , Pulse Width (s) Normalized Thermal Response (RθJA) 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PDM D = TON/T TJpeak = TC+PDMXRθJC TON T Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform Rev:2021Y1

www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. Package Outline Dimensions Millimeters Rev:2021Y1