YFW150N03AD

YFW150N03AD YFWDIODE | Alldatasheet

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www.yfwdiode.com 30V N- CHANNEL ENHANCEMENT MODE MAIN CHARACTERISTICS I D V DSS R DSON -typ(@V GS =10V) ＜3 m Application Battery protection Load switch Uninterruptible power supply Product Specification Classification Part Number YFW150N03AD Maximum Ratings at Tc =25°C unless otherwise specified Characteristics Drain-Source Voltage Gate - Source Voltage Continuous Drain Current, V GS @ 10V 1.6 C =25 Continuous Drain Current, V GS @ 10V 1.6 C 100 Pulsed Drain Current Single Pulse Avalanche Energy Avalanche Current Total Power Dissipation C =25℃ Storage Temperature Range Operating Junction Temperature Range Thermal Resistance, Junction-Ambient Thermal Resistance Junction-Case GuangDong CHANNEL ENHANCEMENT MODE MOSFET 150A 30V m Ω(Type:2.2 mΩ) Product Specification Classification Package Marking TO-252 YFW 150N03AD XXXXX =25°C unless otherwise specified Symbols Value V DS V GS I D 155 100 I D 110 I DM 450 E AS 246 I AS 70.2 P D 89.3 T STG 55 to +1 T J 55 to +1 R θJA R θJC 1.4 YFW150N03AD GuangDong YFW Electronics Co, Ltd. TO-252 Pack 2500PCS/Tape Value Units V V 155 A 110 A 450 A 246 mJ 70.2 A 89.3 W 55 to +1 55 to +1 °C/W 1.4 °C/W Rev:2021Y1

www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. Maximum Ratings at Tc=25°C unless otherwise specified Characteristics Test Condition Symbols Min Typ Max Units Drain-Source Breakdown Voltage V GS =0V, I D =250uA BV DSS 30 - - V BVDSS Temperature Coefficient Reference to 25℃ , I D =1mA △BV DSS/△TJ - 0.022 - V/°C Static Drain-Source On-Resistance V GS =10V, I D =30A R DS(ON) - 2.2 3 mΩ V GS =4.5V, I D =15A - 3.2 4 Gate -Threshold Voltage V DS GS , I D =250uA V GS(th) 1 - 2.5 V VGS(th) Temperature Coefficient GS(th) - -6.1 - mV/°C Drain-Source Leakage Current V DS =24V , V GS =0V , T J =25℃ I DSS - - 2 μA V DS =24V , V GS =0V , T J =55℃ - - 10 Gate-Source Leakage Current V GS =±20V, V DS =0V I GSS - - ±100 nA Forward Transconductance V DS =5V, I D =30A g FS - 60 - S Gate Resistance V DS =0V , V GS =0V , f=1MHz R g - 0.9 - Total Gate Charge(4.5V) V DS =15V V GS =10V I D =15A Q g - 56.9 - nC Gate-Source Charge Q gs - 13.8 - Gate-Drain Charge Q gd - 23.5 - Turn-on delay time V DD =15V V GS =10V R G =3.3 I D =1A t d(on) - 20.1 - ns Rise Time T r - 6.3 - Turn-Off Delay Time t d(OFF) - 124.6 - Fall Time t f - 15.8 - Input Capacitance V DS =15V V GS =0V f=1.0MHz C iss - 5935 - P F Output Capacitance C oss - 725 - Reverse Transfer Capacitance C rss - 538 - Continuous Source Current 1,5 V G D =0V , Force Current I S - - 155 A Pulsed Source Current 2,5 I SM - - 310 A Diode Forward Voltage V GS =0V , I S =1A , T J =25℃ V SD - - 1.2 V Note : 1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2 .The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 4.The power dissipation is limited by 150℃ junction temperature 5 .The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 6.Package limitation current is 85A. Rev:2021Y1

www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. Ratings and Characteristic Curves 0 0.025 0.05 0.075 0.1 VDS , Drain-to-Source Voltage (mV) ID Drain Current (A) VGS =7V VGS=3V VGS=5V VGS=4.5V VGS=10V 2.75 3.00 3.25 3.50 3.75 4.00 4 6 8 10 VGS (V) RDSON (mΩ) ID=12A 0.2 0.4 0.6 0.8 1 VSD , Source-to-Drain Voltage (V) IS Source Current(A) TJ=150℃ TJ=25℃ 0 40 80 120 QG , Total Gate Charge (nC) VGS Gate to Source Voltage (V) VDS=15V ID=15A 0.5 1.5 -50 0 50 100 150 TJ ,Junction Temperature ( ℃) Normalized V GS(th) 0.5 1.0 1.5 2.0 -50 0 50 100 150 TJ , Junction Temperature (℃) Normalized On Resistance Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance v.s Gate-Source Voltage Fig.3 Forward Characteristics of Reverse diode Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) v.s TJ Fig.6 Normalized RDSON v.s TJ Rev:2021Y1

www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. Ratings and Characteristic Curves 100 1000 10000 100000 1 5 9 13 17 21 25VDS , Drain to Source Voltage(V) Capacitance (pF) F=1.0MHz Ciss Coss Crss 0.01 0.10 1.00 10.00 100.00 1000.00 0.1 1 10 100 1000 VDS (V) ID (A) 10us 100us 10ms 100ms DC TC=25℃ Single Pulse 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (RθJC) PDM D = TON/T TJpeak = TC + PDM x RθJC TON T 0.02 0.01 0.05 0.1 0.3 DUTY=0.5 SINGLE PULSE Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% IAS VGS BVDSS VDD EAS=

2 L x IAS

Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Waveform Rev:2021Y1

www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. Package Outline Dimensions Millimeters TO-252 Dim. Min. Typ. Max. A 2.10 - 2.50 A2 0 - 0.10 B 0.66 - 0.86 B2 5.18 - 5.48 C 0.40 - 0.60 C2 0.44 - 0.58 D 5.90 - 6.30 D1 5.30REF E 6.40 - 6.80 E1 4.63 - - G 4.47 - 4.67 H 9.50 - 10.70 L 1.09 - 1.21 L2 1.35 - 1.65 V1 - 7° - V2 0° - 6° All Dimensions in millimeter Rev:2021Y1