YFW120N03NF YFWDIODE | Alldatasheet

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www.yfwdiode.com 30V N- CHANNEL ENHANCEMENT MODE MAIN CHARACTERISTICS I D V DSS R DSON -typ(@V GS =10V) ＜2. Application Lithium battery protection Wireless impact Mobile phone fast charging Product Specification Classification Part Number YFW120N03NF P Maximum Ratings at Tc =25°C unless otherwise specified Characteristics Drain-Source Voltage Gate - Source Voltage Continuous Drain Current, V GS @ 10V 1.6 C =25 Continuous Drain Current, V GS @ 10V 1.6 C =10 Pulsed Drain Current Single Pulsed Avalanche Energy Avalanche Current Total Power Dissipation C =25℃ Storage Temperature Range Operating Junction Temperature Range Thermal Resistance Junction-ambient Thermal Resistance, Junction - Case GuangDong CHANNEL ENHANCEMENT MODE MOSFET 120A 30V mΩ(Type:1.5mΩ) PDFN5*6 Product Specification Classification Package Marking P DFN5*6-8L YFW 120N03NF XXXXX =25°C unless otherwise specified Symbols Value V DS V GS I D 120 I D I DM 320 E AS 180 I AS P D 187 T STG 55 to + T J 55 to +1 R θJA R θJC 1.1 YFW120N03NF GuangDong YFW Electronics Co, Ltd. PDFN5*6 -8L Pack 5000PCS/Tape Value Units V V 120 A A 320 A 180 mJ A 187 W 55 to + 150 55 to +1 °C/W 1.1 °C/W Rev:2021Y1

www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. Maximum Ratings at Tc=25°C unless otherwise specified Characteristics Test Condition Symbols Min Typ Max Units Drain-Source Breakdown Voltage V GS =0V, I D =250uA BV DSS 30 32 - V BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA BVDSS/ TJ - 0.014 - V/°C Static Drain-Source On-Resistance V GS =10V, I D =30A R DS(ON) - 1.5 2.4 mΩ V GS =4.5V, I D =15A - 2.5 4.5 Gate -Threshold Voltage V DS GS , I D =250uA V GS(th) 1.2 1.5 2.5 V V GS (th) Temperature Coefficient GS(th) - -4 - mV/°C Drain-Source Leakage Current V DS =24V , V GS =0V , T J =25℃ I DSS - - 1 μA V DS =24V , V GS =0V , T J =55℃ - - 5 Gate –Source Leakage Current V GS =±20V, V DS =0V I GSS - - ±100 nA Forward Transconductance V DS =5V , I D =30A g fs - - S Gate Resistance V DS =0V , V GS =0V , f=1MHz R g Ω Total Gate Charge(4.5V) V DS =15V I D =15A V GS =10V Q g 1.7 nC Gate-Source Charge Q gs 56.9 Gate-Drain Charge Q gd 13.8 Turn-on delay time V DD =15V V GS =10V I D = 1A R G =3.3Ω t d(on) 23.5 ns Rise Time T r 20.1 Turn-Off Delay Time t d(OFF) 6.3 Fall Time t f 124.6 Input Capacitance V DS =15V V GS =0V f=1.0MHz C iss 15.8 P F Output Capacitance C oss 4345 Reverse Transfer Capacitance C rss 340 Continuous Source Current 1,6 V G D =0V , Force Current I S - - 85 A Diode Forward Voltage V GS =0V , I S =1A , T J =25℃ V SD - - 1.2 V Note : 1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3、The EAS data shows Max. rating . The test condition is V DD =25V,V GS =10V,L=0.1mH,I AS =60A 4、The power dissipation is limited by 150℃ junction temperature 5、The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation. Rev:2021Y1

www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. Ratings and Characteristic Curves 0.2 0.4 0.6 0.8 1 VSD , Source-to-Drain Voltage (V) IS Source Current(A) TJ=150℃ TJ=25℃ 0 40 80 120 QG , Total Gate Charge (nC) VGS Gate to Source Voltage (V) VDS=15V ID=15A Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance v.s Gate-Source Voltage Fig.3 Forward Characteristics of Reverse diode Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) v.s TJ Fig.6 Normalized RDSON v.s TJ Rev:2021Y1

www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. Ratings and Characteristic Curves 0.001 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (RθJC) 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PDM D = TON/T TJpeak = TC+PDMXRθJC TON T 0.02 Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% IAS VGS BVDSS VDD EAS=

2 L x IAS

Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform Rev:2021Y1

PDFN5*6-8L YFW120N03NF www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. Package Outline Dimensions Millimeters Symbol Common mm Inch Mim Max Min Max A 1.03 1.17 0.0406 0.0461 b 0.34 0.48 0.0134 0.0189 c 0.824 0.0970 0.0324 0.082 D 4.80 5.40 0.1890 0.2126 D1 4.11 4.31 0.1618 0.1697 D2 4.80 5.00 0.1890 0.1969 E 5.95 6.15 0.2343 0.2421 E1 5.65 5.85 0.2224 0.2303 E2 1.60 / 0.0630 / e 1.27 BSC 0.05 BSC L 0.05 0.25 0.0020 0.0098 L1 0.38 0.50 0.0150 0.0197 L2 0.38 0.50 0.0150 0.0197 H 3.30 3.50 0.1299 0.1378 I / 0.18 / 0.0070 Rev:2021Y1