YFW10G06NF

YFW10G06NF YFWDIODE | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 8

Technical content

www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. 60V N+P-CHANNEL ENHANCEMENT MODE MOSFET MAIN CHARACTERISTICS I D 10A V DSS 60V R DSON -typ(@V GS =10V) ＜40mΩ(Type:35 mΩ) I D -9.5A V DSS -60V R DSON -typ(@V GS =-10V) ＜70mΩ(Type:55 mΩ) Application Battery protection Load switch Uninterruptible power supply PDFN5*6-8L Product Specification Classification Part Number Package Marking Pack YFW10G06NF PDFN5*6-8L YFW 10G06NF XXXXX 5000PCS/Tape Maximum Ratings at Tc=25°C unless otherwise specified Characteristics Symbols Value Units N-Ch P-Ch Drain-Source Voltage V DS 60 -60 V Gate - Source Voltage V GS ±20 ±20 V Continuous Drain Current, V GS @ 10V A =25℃ I D 10 -9.5 A Continuous Drain Current, V GS @ 10V A =70℃ I D 5.2 -4.3 A Pulsed Drain Current I DM 30 -27 A Single Pulse Avalanche Energy E AS 25.5 35.3 mJ Avalanche Current I AS 22.6 -26.6 A Total Power Dissipation A =25℃ P D 1.5 1.5 W Storage Temperature Range T STG -55 to +150 Operating Junction Temperature Range T J -55 to +150 Thermal Resistance Junction-Ambient R θJA °C/W Thermal Resistance Junction-Case R θJC °C/W Rev:2021Y1

www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. N-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Characteristics Test Condition Symbols Min Typ Max Units Drain-Source Breakdown Voltage V GS =0V, I D =250uA BV DSS 60 66 - V BVDSS Temperature Coefficient Reference to 25℃ , I D =1mA △BV DSS/△TJ - 0.063 - V/℃ Static Drain-Source On-Resistance V GS =10V, I D =4A R DS(ON) - 35 40 mΩ V GS =4.5V, I D =2A - 38 45 Gate Threshold Voltage V DS GS , I D =250uA V GS(th) 1.2 1.6 2.5 V V GS(th) Temperature Coefficient GS(th) - -5.24 - mV/℃ Drain-Source Leakage Current V DS =48V, V GS =0V T J =25℃ I DSS - - 1 uA V DS =48V , V GS =0V , T J =55℃ - - 5 Gate-Source Leakage Current V GS =±20V, V DS =0V I GSS - - ±100 nA Forward Transconductance V DS = 5V, I D = 4A g fs - 21 - S Gate Resistance V DS =0V , V GS =0V , f=1MHz R g - 3.2 - Ω Total Gate Charge(4.5V) V DS =48V V GS =4.5V I D =4A Q g - 12.6 - nC Gate-Source Charge Q gs - 3.2 - Gate-Drain Charge Q gd - 6.3 - Turn-on delay time V DD =30V V GS =10V R G = 3.3Ω I D = 4A t d(on) - 8 - ns Rise Time T r - 14.2 - Turn-Off Delay Time t d(OFF) - 24.4 - Fall Time t f - 4.6 - Input Capacitance V DS =15V V GS =0V f=1MHz C iss - 1378 - P F Output Capacitance C oss - 86 - Reverse Transfer Capacitance C rss - 64 - Continuous Source Current 1,5 V G D =0V , Force Current I S - - 4.8 A Pulsed Source Current 2,5 I SM - - 9.6 A Diode Forward Voltage V GS =0V , I S =1A , T J =25℃ V SD - - 1.2 V Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation Rev:2021Y1

www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. P-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Characteristics Test Condition Symbols Min Typ Max Units Drain-Source Breakdown Voltage V GS =0V, I D =-250uA BV DSS -60 -66 - V BVDSS Temperature Coefficient Reference to 25℃ , I D =-1mA △BV DSS/△TJ - -0.03 - V/℃ Static Drain-Source On-Resistance V GS =-10V, I D =-3A R DS(ON) - 55 70 mΩ V GS =-4.5V, I D =-2A - 75 105 Gate Threshold Voltage V DS GS , I D =-250uA V GS(th) -1.2 -1.5 -2.5 V V GS(th) Temperature Coefficient GS(th) - 4.56 - mV/℃ Drain-Source Leakage Current V DS =-48V, V GS =0V T J =25℃ I DSS - - 1 uA V DS =-48V , V GS =0V , T J =55℃ - - 5 Gate-Source Leakage Current V GS =±20V, V DS =0V I GSS - - ±100 nA Forward Transconductance V DS = -5V, I D = -3A g fs - 15 - S Gate Resistance V DS =0V , V GS =0V , f=1MHz R g - 13.5 - Ω Total Gate Charge(-4.5V) V DS =-48V V GS =-4.5V I D =-3A Q g - 9.86 - nC Gate-Source Charge Q gs - 3.1 - Gate-Drain Charge Q gd - 2.95 - Turn-on delay time V DD =-15V V GS =-10V R G = 3.3Ω I D =-1A t d(on) - 28.8 - ns Rise Time T r - 19.8 - Turn-Off Delay Time t d(OFF) - 60.8 - Fall Time t f - 7.2 - Input Capacitance V DS =-15V V GS =0V f=1MHz C iss - 1447 - P F Output Capacitance C oss - 97.3 - Reverse Transfer Capacitance C rss - 70 - Continuous Source Current 1,5 V G D =0V , Force Current I S - - -3.7 A Pulsed Source Current 2,5 I SM - - -7.5 A Diode Forward Voltage V GS =0V , I S =-1A , T J =25℃ V SD - - -1.2 V Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation Rev:2021Y1

www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. Ratings and Characteristic Curves 0 0.5 1 1.5 2 VDS , Drain-to-Source Voltage (V) ID Drain Current (A) VGS=10V VGS=7 V GS =5V VGS=4.5V VGS=3V 2 4 6 8 10 VGS (V) RDSON (mΩ) ID=12A 0.2 0.4 0.6 0.8 1 VSD , Source-to-Drain Voltage (V) IS Source Current(A) TJ=150℃ TJ=25℃ 0 5 10 15 20 25 QG , Total Gate Charge (nC) VGS Gate to Source Voltage (V) ID=12A 0.5 1.5 -50 0 50 100 150 TJ ,Junction Temperature (℃) Normalized VGS(th) 0.5 1.0 1.5 2.0 2.5 -50 0 50 100 150 TJ , Junction Temperature (℃) Normalized On Resistance N-Channel Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance v.s Gate-Source Voltage Fig.3 Forward Characteristics of Reverse diode Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) v.s TJ Fig.6 Normalized RDSON v.s TJ Rev:2021Y1

www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. Ratings and Characteristic Curves 100 1000 10000 1 5 9 13 17 21 25VDS Drain to Source Voltage(V) Capacitance (pF) F=1.0MHz Ciss Coss Crss 0.01 0.10 1.00 10.00 100.00 0.1 1 10 100 1000 VDS (V) ID (A) 10us 1ms 10ms 100ms DC TC=25℃ Single Pulse 100us 0.001 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (RθJC) 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PDM D = TON/T TJpeak = TC+PDMXRθJC TON T 0.02 Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% IAS VGS BVDSS VDD EAS=

2 L x IAS

Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Waveform Rev:2021Y1

www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. Ratings and Characteristic Curves 0 0.5 1 1.5 2 -VDS , Drain-to-Source Voltage (V) D Drain Current (A) VGS=-10V VGS=-7V V GS =-5V VGS=-4.5V VGS=-3V 120 160 2 4 6 8 10 -VGS (V) RDSON (mΩ) ID=-12A 0.2 0.4 0.6 0.8 1 -VSD , Source-to-Drain Voltage (V) -IS Source Current(A) TJ=150℃ TJ=25℃ 0 5 10 15 20 25 QG , Total Gate Charge (nC) -VGS Gate to Source Voltage (V) ID=-12A 0.5 1.5 -50 0 50 100 150 TJ ,Junction Temperature ( oC) Normalized VGS(th) (V) 0.5 1.0 1.5 2.0 2.5 -50 0 50 100 150 TJ , Junction Temperature (℃) Normalized On Resistance Fig.1 Typical Output Characteristics Fig.2 On-Resistance v.s Gate-Source Voltage Fig.3 Forward Characteristics of Reverse diode Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) v.s TJ Fig.6 Normalized RDSON v.s TJ P-Channel Typical Characteristics Rev:2021Y1

www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. Ratings and Characteristic Curves 100 1000 10000 1 5 9 13 17 21 25-VDS Drain to Source Voltage(V) Capacitance (pF) F=1.0MHz Ciss Coss Crss 0.01 0.10 1.00 10.00 100.00 0.1 1 10 100 1000 -VDS (V) -ID (A) 10us 1ms 10ms 100ms DC TC=25℃ Single Pulse 100us 0.001 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (RθJC) 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PDM D = TON/T TJpeak = TC+PDMXRθJC TON T 0.02 Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Waveform Rev:2021Y1

PDFN5*6-8L YFW10G06NF www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. Package Outline Dimensions Millimeters Symbol Common mm Mim Nom Max A 0.90 1.00 1.10 b 0.33 0.41 0.51 C 0.20 0.25 0.30 D1 4.80 4.90 5.00 D2 3.61 3.81 3.96 E 5.90 6.00 6.10 e 1.27BSC H 0.41 0.51 0.61 K 1.10 -- -- L 0.51 0.61 0.71 L1 0.06 0.13 0.20 M 0.50 -- -- a 0° -- 12° 5.66 5.76 5.83 3.37 3.47 3.58 Rev:2021Y1