YFW10G04S YFWDIODE | Alldatasheet

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www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. 40V N+P-CHANNEL ENHANCEMENT MODE MOSFET MAIN CHARACTERISTICS I D 9.8A V DSS 40V R DSON -typ(@V GS =10V) ＜26mΩ(Type:17.5 mΩ) I D -7.5A V DSS -40V R DSON -typ(@V GS =-10V) ＜45mΩ(Type:38 mΩ) Application Wireless charging Boost driver Brushless motor SOP-8 Product Specification Classification Part Number Package Marking Pack YFW10G04S SOP-8 YFW 10G04S XXXXX 3000PCS/Tape Maximum Ratings at Tc=25°C unless otherwise specified Characteristics Symbols Value Units N-Ch P-Ch Drain-Source Voltage VDS 40 -40 V Gate - Source Voltage VGS ±20 ±20 V Continuous Drain Current, V GS @ 10V A =25℃ I D 9.8 -7.5 A Continuous Drain Current, V GS @ 10V A =70℃ I D 5.2 -4.8 A Pulsed Drain Current I DM 23 -22 A Single Pulse Avalanche Energy E AS 16.2 39 mJ Avalanche Current I AS 18 -28 A Total Power Dissipation A =25℃ P D 1.67 1.67 W Storage Temperature Range T STG -55 to +150 Operating Junction Temperature Range T J -55 to +150 Thermal Resistance Junction-Ambient R θJA °C/W Thermal Resistance Junction-Case R θJC °C/W Rev:2021Y1

www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. N-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Characteristics Test Condition Symbols Min Typ Max Units Drain-Source Breakdown Voltage V GS =0V, I D =250uA BV DSS 40 44 - V BVDSS Temperature Coefficient Reference to 25℃ , I D =1mA △BV DSS/△TJ - 0.034 - V/℃ Static Drain-Source On-Resistance V GS =10V, I D =5A R DS(ON) - 17.5 26 mΩ V GS =4.5V, I D =4A - 25.0 35 Gate Threshold Voltage V DS GS , I D =250uA V GS(th) 1.0 1.6 2.5 V V GS(th) Temperature Coefficient GS(th) - -4.56 - mV/℃ Drain-Source Leakage Current V DS =32V, V GS =0V T J =25℃ I DSS - - 1 uA V DS =32V , V GS =0V , T J =55℃ - - 5 Gate-Source Leakage Current V GS =±20V, V DS =0V I GSS - - ±100 nA Forward Transconductance V DS = 5V, I D = 5A g fs - 14 - S Gate Resistance V DS =0V , V GS =0V , f=1MHz R g - 2.6 - Ω Total Gate Charge(4.5V) V DS =20V V GS =4.5V I D =5A Q g - 5.5 - nC Gate-Source Charge Q gs - 1.25 - Gate-Drain Charge Q gd - 2.5 - Turn-on delay time V DD =20V V GS =10V R G = 3.3Ω I D = 1A t d(on) - 8.9 - ns Rise Time T r - 2.2 - Turn-Off Delay Time t d(OFF) - 41 - Fall Time t f - 2.7 - Input Capacitance V DS =15V V GS =0V f=1MHz C iss - 593 - P F Output Capacitance C oss - 76 - Reverse Transfer Capacitance C rss - 56 - Continuous Source Current 1,5 V G D =0V , Force Current I S - - 6.1 A Pulsed Source Current 2,5 I SM - - 23 A Diode Forward Voltage V GS =0V , I S =1A , T J =25℃ V SD - - 1.2 V Note : 1、The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3、The EAS data shows Max. rating . The test condition is V DD =25V,V GS =10V,L=0.1mH,I AS =10A 4、The power dissipation is limited by 150℃ junction temperature 5 、The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation. Rev:2021Y1

www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. P-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Characteristics Test Condition Symbols Min Typ Max Units Drain-Source Breakdown Voltage V GS =0V, I D =-250uA BV DSS -40 -44 - V BVDSS Temperature Coefficient Reference to 25℃ , I D =-1mA △BV DSS/△TJ - -0.02 - V/℃ Static Drain-Source On-Resistance V GS =-10V, I D =-6A R DS(ON) - 38 45 mΩ V GS =-4.5V, I D =-3A - 48 60 Gate Threshold Voltage V DS GS , I D =-250uA V GS(th) -1.0 -1.6 -2.5 V V GS(th) Temperature Coefficient GS(th) - 3.72 - mV/℃ Drain-Source Leakage Current V DS =-32V, V GS =0V T J =25℃ I DSS - - 1 uA V DS =-32V , V GS =0V , T J =55℃ - - 5 Gate-Source Leakage Current V GS =±20V, V DS =0V I GSS - - ±100 nA Forward Transconductance V DS = -5V, I D = -6A g fs - 13 - S Total Gate Charge(-4.5V) V DS =-20V V GS =-4.5V I D =-6A Q g - 11.5 - nC Gate-Source Charge Q gs - 3.5 - Gate-Drain Charge Q gd - 3.3 - Turn-on delay time V DD =-15V V GS =-10V R G = 3.3Ω I D =-1A t d(on) - 22 - ns Rise Time T r - 15.7 - Turn-Off Delay Time t d(OFF) - 59 - Fall Time t f - 5.5 - Input Capacitance V DS =-15V V GS =0V f=1MHz C iss - 1415 - P F Output Capacitance C oss - 134 - Reverse Transfer Capacitance C rss - 102 - Continuous Source Current 1,5 V G D =0V , Force Current I S - - -6 A Pulsed Source Current 2,5 I SM - - -22 A Diode Forward Voltage V GS =0V , I S =-1A , T J =25℃ V SD - - -1.2 V Note : 1、The data tested by surface mo unted on a 1 inch FR-4 board with 2OZ copper. 2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3、The EAS data shows Max. rating . The test condition is V DD =-25V,V GS =-10V,L=0.1mH,I AS =-10A 4、The power dissipation is limited by 150℃ junction temperature 5 、The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation. Rev:2021Y1

www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. Ratings and Characteristic Curves N-Channel Typical Characteristics Rev:2021Y1

www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. Ratings and Characteristic Curves Rev:2021Y1

www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. Ratings and Characteristic Curves P-Channel Typical Characteristics Rev:2021Y1

www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. Ratings and Characteristic Curves Rev:2021Y1

www.yfwdiode.com GuangDong YFW Electronics Co, Ltd. Package Outline Dimensions Millimeters Rev:2021Y1